scholarly journals Metal production requirements for rapid photovoltaics deployment

2015 ◽  
Vol 8 (6) ◽  
pp. 1651-1659 ◽  
Author(s):  
Goksin Kavlak ◽  
James McNerney ◽  
Robert L. Jaffe ◽  
Jessika E. Trancik
Keyword(s):  
Thin Film ◽  
Growth Rates ◽  
Crystalline Silicon ◽  
Metal Production ◽  
Production Growth

To supply even a small share of electricity in 2030, several thin-film photovoltaic (PV) technologies, such as CdTe shown here, would require metal production growth rates that exceed those observed historically. In contrast, crystalline silicon could supply a majority electricity share without requiring unprecedented metal growth rates.

Trends and forecasts of the global availability of food

2020 ◽  
Vol 16 (7) ◽  
pp. 1297-1316
Author(s):  
O.N. Terent'eva
Keyword(s):  
High Risk ◽  
Growth Rates ◽  
Statistical Data ◽  
Economic Security ◽  
Agricultural Products ◽  
Mortality And Morbidity ◽  
National Economic ◽  
Production Growth ◽  
Country Analysis ◽  
Cross Country

Subject. The stable supply of food to people is a cornerstone for the national economic security, while a lack of food or its expensiveness may undermine the economy, principles of power, and cause panics and wars. Malnutrition and hunger are critical indicators of the insufficient foods supply. Objectives. The article indicates which countries have high risk of hunger, and predicts its further movement. I also evaluate factual trends in the availability of food across countries. Methods. The study refers to statistical data in public domain, including the FAOSTAT. I apply methods of ranking, abstraction, prediction. Results. I performed the cross-country analysis and discovered that 117 countries demonstrated signs of malnutrition. The article sets forth a technique for splitting countries into five groups by level of hunger risk. The article compares data on hunger in the countries and consequences of mortality and morbidity. I ranked countries by key types of agricultural products and explained their production growth rates for a span of 18 years. I predicted how countries would be ranked in terms of hunger from 2030 to 2050, and found the extent to which the hunger risk will escalate in more flourishing countries. Conclusions and Relevance. Hunger and shortage of food seem invincible in the countries where people are hungry or very hungry. Sometimes it appears almost impossible for respective governments to solve the issue. Triggering the systemic hunger, such factors and premises are beyond control of starving countries. Hence, the international community should provide their support and aid to them.

Comparative Study of Copper Indium Gallium Selenide (CIGS) Solar Cell With Other Solar Technologies

2021 ◽  
Author(s):  
Isabela C. B. ◽  
Ricardo Lameirinhas ◽  
Carlos A. F. Fernandes ◽  
João Paulo N. Torres
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Comparative Study ◽  
Crystalline Silicon ◽  
Gallium Selenide ◽  
Copper Indium Gallium Selenide ◽  
Cigs Solar Cell ◽  
Copper Indium ◽  
Indium Gallium ◽  
Copper Indium Gallium

Thin-film modules are emerging in the photovoltaic market, due to their competitive cost with the traditional crystalline silicon modules. The thin-film cells CuIn(1-x)Ga(x)Se2 (Copper Indium Gallium Selenide - CIGS) are...

The SiNx films process research by plasma-enhanced chemical vapor deposition in crystalline silicon solar cells

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744101 ◽  
Author(s):  
Bitao Chen ◽  
Yingke Zhang ◽  
Qiuping Ouyang ◽  
Fei Chen ◽  
Xinghua Zhan ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Solar Cell ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Double Layers ◽  
Crystalline Silicon Solar Cell

SiNx thin film has been widely used in crystalline silicon solar cell production because of the good anti-reflection and passivation effect. We can effectively optimize the cells performance by plasma-enhanced chemical vapor deposition (PECVD) method to change deposition conditions such as temperature, gas flow ratio, etc. In this paper, we deposit a new layer of SiNx thin film on the basis of double-layers process. By changing the process parameters, the compactness of thin films is improved effectively. The NH3passivation technology is augmented in a creative way, which improves the minority carrier lifetime. In sight of this, a significant increase is generated in the photoelectric performance of crystalline silicon solar cell.

Sub-5 µm Thin Film Crystalline Silicon Solar Cell on Alumina Ceramic Substrate

1993 ◽  
Vol 32 (Part 2, No. 6A) ◽  
pp. L770-L773 ◽  
Author(s):  
Kenichi Ishii ◽  
Hideshi Nishikawa ◽  
Tetsuo Takahashi ◽  
Yutaka Hayashi
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Alumina Ceramic ◽  
Ceramic Substrate ◽  
Crystalline Silicon Solar Cell

Textured (111) crystalline silicon thin film growth on flexible glass by e-beam evaporation

2015 ◽  
Vol 158 ◽  
pp. 269-273 ◽  
Author(s):  
Shane McMahon ◽  
Ashok Chaudhari ◽  
Zhouying Zhao ◽  
Harry Efstathiadis
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Crystalline Silicon ◽  
Thin Film Growth ◽  
Silicon Thin Film

scholarly journals High-Speed Epitaxy Using Supersonic Molecular Jets

1990 ◽  
Vol 201 ◽  
Author(s):  
Djula Eres
Keyword(s):  
Thin Film ◽  
Growth Rates ◽  
High Speed ◽  
Film Growth ◽  
Thin Film Growth ◽  
Free Form ◽  
Electrical Measurements ◽  
Growth Technique ◽  
Pulsed Jets ◽  
Gaseous Source

AbstractThis paper discusses the use of supersonic jets of gaseous source molecules in thin film growth. Molecular jets in free form with no skimmers or collimators in the nozzle-substrate path were used in the investigation of basic film growth processes and in practical film growth applications. The Ge growth rates were found to depend linearly on the digermane jet intensity. Furthermore, the film thickness distributions showed excellent agreement with the distribution of digermane molecules in the jet. High epitaxial Ge growth rates were achieved on GaAs (100) substrates by utilizing high-intensity pulsed jets. The practical advantages and limitations of this film growth technique are evaluated, based on the results of microstructural and electrical measurements of heteroepitaxial Ge films on GaAs (100) substrates.

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