The effect of cluster size on the optical band gap energy of Zn-based metal–organic frameworks

2015 ◽  
Vol 44 (30) ◽  
pp. 13464-13468 ◽  
Author(s):  
Raja Ghosh ◽  
Anthony F. Pedicini ◽  
Purna Chandra Rao ◽  
K. S. Asha ◽  
Arthur C. Reber ◽  
...  
Keyword(s):  
Metal Ions ◽  
Band Gap ◽  
Cluster Size ◽  
Optical Band Gap ◽  
Metal Organic Frameworks ◽  
Band Gap Energy ◽  
Dimethyl Formamide ◽  
Secondary Building Unit ◽  
Gap Energy ◽  
Metal Organic

We have synthesized three Metal–Organic Frameworks (MOFs) in which Zn metal ions form the secondary building unit, and 4,4′-sulfonyldibenzoic acid (SDB) serves as the ligand: [[Zn(DMF)(SDB)] (DMF), 1, [Zn3(DMF)3(SDB)3](DMF), 2 and [Zn3(OH)2(SDB)2] (DMF)2, 3, where DMF = dimethyl formamide].

scholarly journals The effect of substituted benzene dicarboxylic acid linkers on the optical band gap energy and magnetic coupling in manganese trimer metal organic frameworks

2017 ◽  
Vol 5 (3) ◽  
pp. 539-548 ◽  
Author(s):  
K. S. Asha ◽  
Arthur C. Reber ◽  
N. Ahmed ◽  
R. Nath ◽  
Shiv N. Khanna ◽  
...  
Keyword(s):  
Dicarboxylic Acid ◽  
Band Gap ◽  
Optical Band Gap ◽  
Metal Organic Frameworks ◽  
Magnetic Coupling ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Metal Organic ◽  
Benzene Dicarboxylic Acid

The optical band gap energy and magnetism of a series of Mn based compounds were tuned through linker modification.

Stability Investigation in the Optical Properties of Thermally Evaporated Ge5Se95-x Znx Thin Films

2015 ◽  
Vol 7 (3) ◽  
pp. 1923-1930
Author(s):  
Austine Amukayia Mulama ◽  
Julius Mwakondo Mwabora ◽  
Andrew Odhiambo Oduor ◽  
Cosmas Mulwa Muiva ◽  
Boniface Muthoka ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Optical Transition ◽  
Bulk Material ◽  
Band Gap Energy ◽  
Optical Absorbance ◽  
Gap Energy ◽  
Constituent Elements

 Selenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap energy with the average coordination number has also been investigated based on the chemical bonding between the constituents and the rigidity behaviour of the system’s network.

scholarly journals Polymer Thermal Treatment Production of Cerium Doped Willemite Nanoparticles: An Analysis of Structure, Energy Band Gap and Luminescence Properties

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1118
Author(s):  
Ibrahim Mustapha Alibe ◽  
Khamirul Amin Matori ◽  
Mohd Hafiz Mohd Zaid ◽  
Salisu Nasir ◽  
Ali Mustapha Alibe ◽  
...  
Keyword(s):  
Solid State ◽  
Thermal Treatment ◽  
Band Gap ◽  
Optical Band Gap ◽  
Dopant Concentration ◽  
Blue Emission ◽  
Green Emission ◽  
Band Gap Energy ◽  
Solid State Lighting ◽  
Gap Energy

The contemporary market needs for enhanced solid–state lighting devices has led to an increased demand for the production of willemite based phosphors using low-cost techniques. In this study, Ce3+ doped willemite nanoparticles were fabricated using polymer thermal treatment method. The special effects of the calcination temperatures and the dopant concentration on the structural and optical properties of the material were thoroughly studied. The XRD analysis of the samples treated at 900 °C revealed the development and or materialization of the willemite phase. The increase in the dopant concentration causes an expansion of the lattice owing to the replacement of larger Ce3+ ions for smaller Zn2+ ions. Based on the FESEM and TEM micrographs, the nanoparticles size increases with the increase in the cerium ions. The mean particles sizes were estimated to be 23.61 nm at 1 mol% to 34.02 nm at 5 mol% of the cerium dopant. The optical band gap energy of the doped samples formed at 900 °C decreased precisely by 0.21 eV (i.e., 5.21 to 5.00 eV). The PL analysis of the doped samples exhibits a strong emission at 400 nm which is ascribed to the transition of an electron from localized Ce2f state to the valence band of O2p. The energy level of the Ce3+ ions affects the willemite crystal lattice, thus causing a decrease in the intensity of the green emission at 530 nm and the blue emission at 485 nm. The wide optical band gap energy of the willemite produced is expected to pave the way for exciting innovations in solid–state lighting applications.

Fabrication and Photoelectrochemical Characterization of Fe, Co, Ni and Cu-Doped TiO2 Thin Films

2013 ◽  
Vol 764 ◽  
pp. 266-283 ◽  
Author(s):  
Ibram Ganesh ◽  
Rekha Dom ◽  
P.H. Borse ◽  
Ibram Annapoorna ◽  
G. Padmanabham ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Ions ◽  
Band Gap ◽  
Metal Ion ◽  
Band Gap Energy ◽  
Chemical Compositions ◽  
Gap Energy ◽  
Glass Substrates ◽  
Photoelectrochemical Characterization

Different amounts of Fe, Co, Ni and Cu-doped TiO2 thin films were prepared on fluorine doped tin oxide (FTO) coated soda-lime glass substrates by following a conventional sol-gel dip-coating technique followed by heat treatment at 550 and 600°C for 30 min. These thin films were characterized for photo-current, chronoamperometry and band-gap energy values. The chemical compositions of metals-doped TiO2 thin films on FTO glass substrates were confirmed by XPS spectroscopic study. The metal-ions doped TiO2 thin films had a thickness of <200 nm="" optical="" transparency="" of="">80%, band-gap energy of >3.6 eV, and a direct band-to-band energy transition. The photoelectrochemical (PEC) studies revealed that all the metal-ions doped TiO2 thin films exhibit n-type semi-conducting behavior with a quite stable chronoamperometry and photo-currents that increase with the increase of applied voltage but decrease with the dopant metal-ion concentration in the thin film. Furthermore, these thin films exhibited flat-band potentials amenable to water oxidation reaction in a PEC cell. The 0.5 wt.% Cu-doped TiO2 thin film electrode exhibited an highest incident photon-to-current conversion efficiency (IPCE) of about 21%.

The Optical Performance of Holmium Oxide Doped Tellurite Glass for Potential Optical Fiber

2021 ◽  
Vol 317 ◽  
pp. 95-99
Author(s):  
Muhammad Noorazlan Abd Azis ◽  
Halimah Mohamed Kamari ◽  
Suriani Abu Bakar ◽  
Azlina Yahya ◽  
Umar Saad Aliyu
Keyword(s):  
Refractive Index ◽  
Band Gap ◽  
Tellurite Glass ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
Gap Energy ◽  
Xrd Method ◽  
Nonlinear Pattern

Borotellurite glass had been widely applied in the field of optical communications and devices. In this work, holmium oxides doped borotellurite glass had been successfully fabricated via conventional melt-quenched technique. The structural properties of holmium doped tellurite glass were found using x-ray diffraction (XRD) method. The nonexistence of sharp peaks in XRD pattern shows that the inclusion of holmium tellurite glass leads to the formation long range of disorderness. The optical properties of the glass system such as refractive index and optical band gap energy are investigated using UV-Vis spectrophotometer. The value of refractive index is found in nonlinear trend along with holmium oxides concentration. It is found that the refractive index is more than 2 at 0.01, 0.03 and 0.04 of holmium concentrations. The optical band gap energy was found in similar trend with refractive index which is in nonlinear pattern.

scholarly journals Effect of thickness on the optical properties of Gaas thin films

2013 ◽  
Vol 37 (1) ◽  
pp. 83-91 ◽  
Author(s):  
Chitra Das ◽  
Jahanara Begum ◽  
Tahmina Begum ◽  
Shamima Choudhury
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Band Gap ◽  
Optical Band Gap ◽  
Visible Region ◽  
Solar Spectrum ◽  
Band Gap Energy ◽  
Optical Parameters ◽  
Gap Energy

Effect of thickness on the optical and electrical properties of gallium arsenide (GaAs) thin films were studied. The films of different thicknesses were prepared by vacuum evaporation method (~10-4 Pa) on glass substrates at a substrate temperature of 323 K. The film thickness was measured in situ by a frequency shift of quartz crystal. The thicknesses were 250, 300 and 500 nm. Absorption spectrum of this thin film had been recorded using UV-VIS-NIR spectrophotometer in the photon wavelength range of 300 - 2500 nm. The values of some important optical parameters of the studied films (absorption coefficient, optical band gap energy and refractive index; extinction co-efficient and real and imaginary parts of dielectric constant) were determined using these spectra. Transmittance peak was observed in the visible region of the solar spectrum. Here transmittance showed better result when thicknesses were being increased. The optical band gap energy was decreased by the increase of thickness. The refractive index increased by increasing thickness while extinction co-efficient and real and imaginary part of dielectric constant decreased. DOI: http://dx.doi.org/10.3329/jbas.v37i1.15684 Journal of Bangladesh Academy of Sciences, Vol. 37, No. 1, 83-91, 2013

scholarly journals Influence of Mg2+-substitution on the optical band gap energy of Cr2−Mg O3 nanoparticles

2019 ◽  
Vol 13 ◽  
pp. 102106 ◽  
Author(s):  
Jarnail Singh ◽  
Vikram Verma ◽  
Rajesh Kumar ◽  
Ravi Kumar
Keyword(s):  
Band Gap ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Gap Energy

Effect of structural and thermal disorder on the optical band gap energy of Cr2O3 nanoparticles

2019 ◽  
Vol 6 (8) ◽  
pp. 085039
Author(s):  
Jarnail Singh ◽  
Vikram Verma ◽  
Rajesh Kumar ◽  
Sandeep Sharma ◽  
Ravi Kumar
Keyword(s):  
Band Gap ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Thermal Disorder ◽  
Cr2o3 Nanoparticles
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