Styrene hydrogenation performance of Pt nanoparticles with controlled size prepared by atomic layer deposition

2015 ◽  
Vol 5 (8) ◽  
pp. 4218-4223 ◽  
Author(s):  
Jianwei Li ◽  
Bin Zhang ◽  
Yao Chen ◽  
Jiankang Zhang ◽  
Huimin Yang ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Layer Deposition ◽  
Pt Nanoparticles ◽  
Atomic Layer ◽  
Catalytic Performance ◽  
Layer Deposition ◽  
Styrene Hydrogenation

Pt sub-nanoparticles supported on carbon nanotubes prepared by atomic layer deposition exhibit unusual catalytic performance for styrene hydrogenation.

Deposition of Pt Nanoparticles on Oxygen Plasma Treated Carbon Nanotubes by Atomic Layer Deposition

2019 ◽  
Vol 16 (2) ◽  
pp. 855-862 ◽  
Author(s):  
Yang-Chih Hsueh ◽  
Chia-Te Hu ◽  
Chih-Chieh Wang ◽  
Chueh Liu ◽  
Tsong-Pyng Perng
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Layer Deposition ◽  
Oxygen Plasma ◽  
Pt Nanoparticles ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Treated Carbon

Highly dispersed Pt nanoparticles supported on carbon nanotubes produced by atomic layer deposition for hydrogen generation from hydrolysis of ammonia borane

2017 ◽  
Vol 7 (2) ◽  
pp. 322-329 ◽  
Author(s):  
Jiankang Zhang ◽  
Chaoqiu Chen ◽  
Shuai Chen ◽  
Qingmin Hu ◽  
Zhe Gao ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Layer Deposition ◽  
Hydrogen Generation ◽  
Pt Nanoparticles ◽  
Atomic Layer ◽  
Ammonia Borane ◽  
Highly Active ◽  
Layer Deposition ◽  
Highly Dispersed ◽  
Hydrolysis Of

Highly active Pt nanoparticles deposited on CNTs were synthesized by atomic layer deposition used for hydrogen generation from AB hydrolysis.

scholarly journals Scalable nanoporous carbon films allow line-of-sight 3D atomic layer deposition of Pt: towards a new generation catalyst layer for PEM fuel cells

2021 ◽  
Author(s):  
Marwa Atwa ◽  
Xiaoan Li ◽  
Zhaoxuan Wang ◽  
Samuel Dull ◽  
Shicheng Xu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Pt Nanoparticles ◽  
Catalyst Layer ◽  
Atomic Layer ◽  
Pem Fuel Cells ◽  
Nanoporous Carbon ◽  
Carbon Films ◽  
Layer Deposition ◽  
Binder Free ◽  
New Generation

A self-supported, binder-free and scalable nanoporous carbon scaffold serves as an excellent host for the efficient and uniform atomic layer deposition of Pt nanoparticles, showing exemplary performance as a cathode catalyst layer in a PEM fuel cell.

Direct formation of anatase TiO2nanoparticles on carbon nanotubes by atomic layer deposition and their photocatalytic properties

2016 ◽  
Vol 27 (40) ◽  
pp. 405702 ◽  
Author(s):  
Sheng-Hsin Huang ◽  
Shih-Yun Liao ◽  
Chih-Chieh Wang ◽  
Chi-Chung Kei ◽  
Jon-Yiew Gan ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Photocatalytic Properties ◽  
Layer Deposition ◽  
Direct Formation

Atomic layer deposition of Pd and Pt nanoparticles for catalysis: on the mechanisms of nanoparticle formation

2015 ◽  
Vol 27 (3) ◽  
pp. 034001 ◽  
Author(s):  
Adriaan J M Mackus ◽  
Matthieu J Weber ◽  
Nick F W Thissen ◽  
Diana Garcia-Alonso ◽  
René H J Vervuurt ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Pt Nanoparticles ◽  
Atomic Layer ◽  
Nanoparticle Formation ◽  
Layer Deposition

scholarly journals Conformal High-K Dielectric Coating of Suspended Single-Walled Carbon Nanotubes by Atomic Layer Deposition

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1085 ◽  
Author(s):  
Kemelbay ◽  
Tikhonov ◽  
Aloni ◽  
Kuykendall
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Layer Deposition ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Ambient Conditions ◽  
Nucleation Layer ◽  
Layer Deposition ◽  
High K ◽  
High K Dielectric

As one of the highest mobility semiconductor materials, carbon nanotubes (CNTs) have been extensively studied for use in field effect transistors (FETs). To fabricate surround-gate FETs— which offer the best switching performance—deposition of conformal, weakly-interacting dielectric layers is necessary. This is challenging due to the chemically inert surface of CNTs and a lack of nucleation sites—especially for defect-free CNTs. As a result, a technique that enables integration of uniform high-k dielectrics, while preserving the CNT’s exceptional properties is required. In this work, we show a method that enables conformal atomic layer deposition (ALD) of high-k dielectrics on defect-free CNTs. By depositing a thin Ti metal film, followed by oxidation to TiO2 under ambient conditions, a nucleation layer is formed for subsequent ALD deposition of Al2O3. The technique is easy to implement and is VLSI-compatible. We show that the ALD coatings are uniform, continuous and conformal, and Raman spectroscopy reveals that the technique does not induce defects in the CNT. The resulting bilayer TiO2/Al2O3 thin-film shows an improved dielectric constant of 21.7 and an equivalent oxide thickness of 2.7 nm. The electrical properties of back-gated and top-gated devices fabricated using this method are presented.

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