Defect structure and optical phonon confinement in ultrananocrystalline BixSn1−xO2 (x = 0, 0.03, 0.05, and 0.08) synthesized by a sonochemical method

2016 ◽  
Vol 18 (8) ◽  
pp. 5995-6004 ◽  
Author(s):  
L. Aswaghosh ◽  
Divinah Manoharan ◽  
N. Victor Jaya
Keyword(s):  
Size Effect ◽  
Vibrational Spectra ◽  
Optical Phonon ◽  
Defect Structure ◽  
Selection Rule ◽  
Sonochemical Method ◽  
Phonon Confinement ◽  
Zone Centre

Relaxation of the zone-centre optical phonon selection rule due to size effect causes interesting changes in vibrational spectra.

Optical-phonon confinement and scattering in wurtzite heterostructures

1998 ◽  
Vol 58 (8) ◽  
pp. 4860-4865 ◽  
Author(s):  
B. C. Lee ◽  
K. W. Kim ◽  
M. A. Stroscio ◽  
M. Dutta
Keyword(s):  
Optical Phonon ◽  
Phonon Confinement

scholarly journals The Ettingshausen effect in doped semiconductor superlattice under the influence of confined optical phonon

2020 ◽  
Vol 36 (3) ◽  
Author(s):  
Nguyen Thi Lam Quynh ◽  
Cao Thi Vi Ba ◽  
Nguyen Quang Bau
Keyword(s):  
Magnetic Field ◽  
Laser Radiation ◽  
Quantum Number ◽  
Optical Phonon ◽  
Phonon Scattering ◽  
Resonance Condition ◽  
Numerical Results ◽  
Phonon Confinement ◽  
Semiconductor Superlattice ◽  
Ettingshausen Effect

The electron – optical phonon scattering is considered in detail to studying the Ettingshausen effect in doped semiconductor superlattice under the influence of phonon confinement and laser radiation. The analytical expressions for tensors and the Ettingshausen coefficient are obtained by using the kinetic equation method. The Ettingshausen coefficient depends on temperature of the sample, amplitude and frequency of laser radiation, magnetic field and the quantum number m specific for the confinement of phonon. The dependences are clearly displayed in the numerical results for GaAs:Be/GaAs:Si doped semiconductor superlattice. The magnetic field makes the Ettingshausen coefficient change in quantitative under the influence of temperature or laser amplitude and change the resonance condition. The numerical results show that both resonance condition and resonance peaks position are affected by the increase of quantum number m. We also get the result corresponding to the unconfined optical phonon case when m is set to zero. Due to the change of the wave function and energy spectrum of electrons, most of results for the Ettingshausen effect in doped semiconductor superlattice obtained are different from the case of bulk semiconductor. Moreover, in comparison with the case of unconfined optical phonon, under the influence of phonon confinement effect, the Ettingshausen coefficient changes in magnitude, the number and position of resonance peaks.

The hybrid model for optical phonon confinement in AlN/GaN quantum wells

1999 ◽  
Vol 263-264 ◽  
pp. 469-472 ◽  
Author(s):  
C.R. Bennett ◽  
B.K. Ridley ◽  
N.A. Zakhleniuk ◽  
M. Babiker
Keyword(s):  
Quantum Wells ◽  
Hybrid Model ◽  
Optical Phonon ◽  
Phonon Confinement

Optical phonon confinement in zinc oxide nanoparticles

2000 ◽  
Vol 87 (5) ◽  
pp. 2445-2448 ◽  
Author(s):  
M. Rajalakshmi ◽  
Akhilesh K. Arora ◽  
B. S. Bendre ◽  
Shailaja Mahamuni
Keyword(s):  
Zinc Oxide ◽  
Optical Phonon ◽  
Zinc Oxide Nanoparticles ◽  
Oxide Nanoparticles ◽  
Phonon Confinement

POLAR-OPTICAL PHONON-LIMITED ELECTRON MOBILITY IN QUANTUM WIRES

2006 ◽  
Vol 20 (21) ◽  
pp. 3015-3025 ◽  
Author(s):  
ARSHAK L. VARTANIAN
Keyword(s):  
Optical Phonon ◽  
Electron Mobility ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Dielectric Medium ◽  
Polar Optical Phonon ◽  
Wire Radius ◽  
Phonon Confinement ◽  
Intersubband Transitions ◽  
Low Field

The electron mobility conditioned by confined and interface polar-optical phonons for a quasi-one-dimensional cylindrical quantum wire embedded in a dielectric medium is investigated analytically. It is shown that the inclusion of the polar optical phonon confinement effects is crucial for accurate calculation of the low-field electron mobility in quantum wire. Taking into account the inelasticity of the electron-polar optical phonon interaction, the electron mobility is derived by a method which was successfully applied in three- and quasi-two-dimensional cases. The contribution of intersubband transitions to electron mobility for the Cd 0.35 Zn 0.65 Se quantum wire embedded in the CdZn dielectric medium is estimated. The extremums on the mobility dependences on wire radius and Cd concentration are obtained.

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