Optical-phonon confinement and scattering in wurtzite heterostructures

1998 ◽  
Vol 58 (8) ◽  
pp. 4860-4865 ◽  
Author(s):  
B. C. Lee ◽  
K. W. Kim ◽  
M. A. Stroscio ◽  
M. Dutta
Keyword(s):  
Optical Phonon ◽  
Phonon Confinement

scholarly journals The Ettingshausen effect in doped semiconductor superlattice under the influence of confined optical phonon

2020 ◽  
Vol 36 (3) ◽  
Author(s):  
Nguyen Thi Lam Quynh ◽  
Cao Thi Vi Ba ◽  
Nguyen Quang Bau
Keyword(s):  
Magnetic Field ◽  
Laser Radiation ◽  
Quantum Number ◽  
Optical Phonon ◽  
Phonon Scattering ◽  
Resonance Condition ◽  
Numerical Results ◽  
Phonon Confinement ◽  
Semiconductor Superlattice ◽  
Ettingshausen Effect

The electron – optical phonon scattering is considered in detail to studying the Ettingshausen effect in doped semiconductor superlattice under the influence of phonon confinement and laser radiation. The analytical expressions for tensors and the Ettingshausen coefficient are obtained by using the kinetic equation method. The Ettingshausen coefficient depends on temperature of the sample, amplitude and frequency of laser radiation, magnetic field and the quantum number m specific for the confinement of phonon. The dependences are clearly displayed in the numerical results for GaAs:Be/GaAs:Si doped semiconductor superlattice. The magnetic field makes the Ettingshausen coefficient change in quantitative under the influence of temperature or laser amplitude and change the resonance condition. The numerical results show that both resonance condition and resonance peaks position are affected by the increase of quantum number m. We also get the result corresponding to the unconfined optical phonon case when m is set to zero. Due to the change of the wave function and energy spectrum of electrons, most of results for the Ettingshausen effect in doped semiconductor superlattice obtained are different from the case of bulk semiconductor. Moreover, in comparison with the case of unconfined optical phonon, under the influence of phonon confinement effect, the Ettingshausen coefficient changes in magnitude, the number and position of resonance peaks.

The hybrid model for optical phonon confinement in AlN/GaN quantum wells

1999 ◽  
Vol 263-264 ◽  
pp. 469-472 ◽  
Author(s):  
C.R. Bennett ◽  
B.K. Ridley ◽  
N.A. Zakhleniuk ◽  
M. Babiker
Keyword(s):  
Quantum Wells ◽  
Hybrid Model ◽  
Optical Phonon ◽  
Phonon Confinement

Optical phonon confinement in zinc oxide nanoparticles

2000 ◽  
Vol 87 (5) ◽  
pp. 2445-2448 ◽  
Author(s):  
M. Rajalakshmi ◽  
Akhilesh K. Arora ◽  
B. S. Bendre ◽  
Shailaja Mahamuni
Keyword(s):  
Zinc Oxide ◽  
Optical Phonon ◽  
Zinc Oxide Nanoparticles ◽  
Oxide Nanoparticles ◽  
Phonon Confinement

POLAR-OPTICAL PHONON-LIMITED ELECTRON MOBILITY IN QUANTUM WIRES

2006 ◽  
Vol 20 (21) ◽  
pp. 3015-3025 ◽  
Author(s):  
ARSHAK L. VARTANIAN
Keyword(s):  
Optical Phonon ◽  
Electron Mobility ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Dielectric Medium ◽  
Polar Optical Phonon ◽  
Wire Radius ◽  
Phonon Confinement ◽  
Intersubband Transitions ◽  
Low Field

The electron mobility conditioned by confined and interface polar-optical phonons for a quasi-one-dimensional cylindrical quantum wire embedded in a dielectric medium is investigated analytically. It is shown that the inclusion of the polar optical phonon confinement effects is crucial for accurate calculation of the low-field electron mobility in quantum wire. Taking into account the inelasticity of the electron-polar optical phonon interaction, the electron mobility is derived by a method which was successfully applied in three- and quasi-two-dimensional cases. The contribution of intersubband transitions to electron mobility for the Cd 0.35 Zn 0.65 Se quantum wire embedded in the CdZn dielectric medium is estimated. The extremums on the mobility dependences on wire radius and Cd concentration are obtained.

scholarly journals Influence of phonon confinement on the optically detected electrophonon resonance linewidth in parabolic quantum wells

2017 ◽  
Vol 126 (1B) ◽  
Author(s):  
Nguyen Dinh Hien
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optical Phonon ◽  
Large Range ◽  
Phonon Confinement ◽  
Resonance Linewidth ◽  
Numerical Result ◽  
Optically Detected ◽  
Parabolic Quantum Wells

We investigate the influence of optical phonon confinement described by Huang-Zhu (HZ) model on the optically detected electrophonon resonance (ODEPR) effect and ODEPR linewidth (ODEPRLW) in parabolic quantum wells (PQW) by using the operator projection. The obtained numerical result for the GaAs/AlAs parabolic quantum well shows that the ODEPR linewidths depend on the well's confinement frequency. Besides, in the two cases of confined and bulk phonons, the linewidth (LW) increases with the increase of confinement frequency. Furthermore, in the large range of the confinement frequency, the influence of phonon confinement plays an important role and cannot be neglected in considering the ODEPR linewidth.

scholarly journals Influence of Confined Phonons on the Hall Coefficient in a Cylindrycal Quantum wire with an infinite potential (for electron – confined optical phonon scattering)

2019 ◽  
Vol 35 (3) ◽  
Author(s):  
Pham Ngoc Thang ◽  
Le Thai Hung ◽  
Do Tuan Long ◽  
Nguyen Quang Bau
Keyword(s):  
Magnetic Field ◽  
Hall Coefficient ◽  
Optical Phonon ◽  
Quantum Wire ◽  
Phonon Scattering ◽  
Constant Electric Field ◽  
Optical Phonons ◽  
Phonon Confinement ◽  
Optical Phonon Scattering ◽  
Analytical Expressions

The influence of confined optical phonons on the Hall Coefficient (HC) in a Cylindrycal Quantum Wire (CQW) with an infinite potential (for electron – confined optical phonons scattering). Consider a case where CQW is placed in a perpendicular magnetic field , a constant - electric field  and an intense electromagnetic wave . By using the quantum kinetic equation for electrons interacting with Confined Optical Phonon (COP), we obtain analytical expressions for (HC), which are different from in comparison to those obtained for the HC in the case of normal bulk semiconductor and in the case of cylindrycal quantum wire with electron – unconfined phonons scattering mechanism. Numerical calculations are also applied for AlGaAs/GaAs/AlGaAs cylindrycal quantum wire, we see the HC depends on magnetic field B, temperature T, frequency Ω and amplitude E0 of laser radiation and especially quantum index m1 and m2 characterizing the phonon confinement. This influence is due to the quantum index m1 and m2, which makes an increase of Hall coefficient by 2,3 times in comparition with the case of unconfined phonons. When the quantum number m1 and m2 goes to zero, the result is the same as in the case of unconfined phonons.

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