Band energies of nanoparticle semiconductor electrodes determined by spectroelectrochemical measurements of free electrons

2015 ◽  
Vol 17 (17) ◽  
pp. 11156-11160 ◽  
Author(s):  
Dhritabrata Mandal ◽  
Thomas W. Hamann
Keyword(s):  
Conduction Band ◽  
Extinction Coefficient ◽  
Semiconductor Materials ◽  
Free Electrons ◽  
The Absolute ◽  
Semiconductor Electrodes ◽  
Nanostructured Semiconductor

The Burstein–Moss shift is utilized to determine the absolute band positions of nanostructured semiconductor materials and the extinction coefficient of free conduction band electrons.

scholarly journals Nanoscale semiconductor devices as new biomaterials

2014 ◽  
Vol 2 (5) ◽  
pp. 619-626 ◽  
Author(s):  
John Zimmerman ◽  
Ramya Parameswaran ◽  
Bozhi Tian
Keyword(s):  
Semiconductor Devices ◽  
Semiconductor Materials ◽  
Great Promise ◽  
Nanostructured Semiconductor

Nanostructured semiconductor materials and devices hold great promise as unique biomaterials to advance biophysics, biology and medicine.

Ion Implantation For High Performance Ill-V Jfets And Hfets

1996 ◽  
Vol 421 ◽  
Author(s):  
J. C. Zolper ◽  
A. G. Baca ◽  
M. E. Sherwin ◽  
J. F. Klem
Keyword(s):  
Ion Implantation ◽  
Conduction Band ◽  
Density Of States ◽  
High Performance ◽  
Electronic Devices ◽  
Semiconductor Materials ◽  
Comprehensive Treatment ◽  
Enabling Technology ◽  
Deep Donor ◽  
P Type

AbstractIon implantation has been an enabling technology for the realization of many high performance electronic devices in III-V semiconductor materials. We report on advances in ion implantation processing technology for application to GaAs JFETs, AlGaAs/GaAs HFETs, and InGaP or InA1P-barrier HFETs. In particular, the GaAs JFET has required the development of shallow p-type implants using Zn or Cd with junction depths down to 35 nm after the activation anneal. Implant activation and ionization issues for AlGaAs will be reported along with those for InGaP and InAlP. A comprehensive treatment of Si-implant doping of AlGaAs is given based on the donor ionization energies and conduction band density-of-states dependence on Al-composition. Si and Si+P implants in InGaP are shown to achieve higher electron concentrations than for similar implants in AlGaAs due to the absence of the deep donor (DX) level. An optimized P co-implantation scheme in InGaP is shown to increase the implanted donor saturation level by 65%.

Reactions of radiation-induced electrons with carbon dioxide in inert cryogenic films: matrix tuning of the excess electron interactions in solids

2020 ◽  
Vol 22 (25) ◽  
pp. 14155-14161
Author(s):  
Ekaterina S. Shiryaeva ◽  
Irina A. Baranova ◽  
Daniil A. Tyurin ◽  
Vladimir I. Feldman
Keyword(s):  
Carbon Dioxide ◽  
Conduction Band ◽  
Excess Electron ◽  
Free Electrons ◽  
Band Energy ◽  
Solid Films ◽  
Radiation Induced ◽  
Electron Interactions

The attachment of radiation-induced electrons to carbon dioxide in inert solid films is controlled by the conduction band energy of quasi-free electrons in the medium.

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