scholarly journals Structural characterization of gas-phase cysteine and cysteine methyl ester complexes with zinc and cadmium dications by infrared multiple photon dissociation spectroscopy

2015 ◽  
Vol 17 (39) ◽  
pp. 25799-25808 ◽  
Author(s):  
Rebecca A. Coates ◽  
Christopher P. McNary ◽  
Georgia C. Boles ◽  
Giel Berden ◽  
Jos Oomens ◽  
...  

Zinc and cadmium dications bind cysteine in tridentate structures at the amine and carbonyl groups and deprotonated sulfur atom.

2017 ◽  
Vol 19 (28) ◽  
pp. 18777-18778
Author(s):  
Rebecca A. Coates ◽  
Christopher P. McNary ◽  
Georgia C. Boles ◽  
Giel Berden ◽  
Jos Oomens ◽  
...  

Correction for ‘Structural characterization of gas-phase cysteine and cysteine methyl ester complexes with zinc and cadmium dications by infrared multiple photon dissociation spectroscopy’ by Rebecca A. Coates et al., Phys. Chem. Chem. Phys., 2015, 17, 25799–25808.


2015 ◽  
Vol 6 (2) ◽  
pp. 1324-1333 ◽  
Author(s):  
Michael B. Cammarata ◽  
Jennifer S. Brodbelt

193 nm UV photodissociation of myoglobin in the gas phase showed preferential backbone cleavages in regions with higher relative B-factors.


2018 ◽  
Vol 20 (44) ◽  
pp. 28319-28330 ◽  
Author(s):  
Rianne E. van Outersterp ◽  
Jonathan Martens ◽  
Giel Berden ◽  
Jeffrey D. Steill ◽  
Jos Oomens ◽  
...  

Gas-phase IR spectroscopic studies and supporting theoretical studies have been performed on adenosine 5′-triphosphate, cytosine 5′-triphosphate and guanosine 5′-triphosphate to elucidate the structural properties of the NTPs by focusing on the influence of the nucleobase and the extent of deprotonation.


2013 ◽  
Vol 740-742 ◽  
pp. 291-294 ◽  
Author(s):  
Matteo Bosi ◽  
Giovanni Attolini ◽  
Béla Pécz ◽  
Zsolt Zolnai ◽  
László Dobos ◽  
...  

3C-SiC layers were grown on Si substrates using standard precursors (SiH4and C3H8) and by adding methyl trichloro silane (MTS) to the gas phase, with growth temperatures between 1200 and 1300 °C. Characterization of the 3C-SiC layers shows that 3C-SiC grown with MTS has higher polycrystalline and amorphous content as well as lower residual stress.


2013 ◽  
Vol 5 (1) ◽  
pp. 56-61 ◽  
Author(s):  
Debora Scuderi ◽  
Valeria Lepere ◽  
Giovanni Piani ◽  
Aude Bouchet ◽  
Anne Zehnacker-Rentien

1991 ◽  
Vol 219 ◽  
Author(s):  
F. Demichelis ◽  
C. F. Pirri ◽  
E. Tresso ◽  
G. Della Mea ◽  
V. Rigato ◽  
...  

ABSTRACTBoron doped a-SiC:H samples have been obtained both by gas phase doping during film growth and by using ion implantation. All the implanted samples were annealed under vacuum to remove the damage introduced by ion implantation and to produce a dopant diffusion. Physical properties deduced by optical, electrical and structural characterization of the two sets of samples have been compared. Ion implantation technique allows a better control of the dopant dose but increases the compositional disorder and the obtained conductivity values are one order of magnitude lower than those of gas doped samples.


1994 ◽  
Vol 47 (2) ◽  
pp. 405 ◽  
Author(s):  
PK Bharadwaj ◽  
AM Lee ◽  
BW Skelton ◽  
BR Srinivasan ◽  
AH White

Single-crystal room-temperature X-ray structure determinations of the title compounds have been carried out. The two compounds are isomorphous, and isomorphous with the previously determined iodide analogue, being monoclinic, P 21/c, a ≈ 10.0, b ≈ 14.9, c ≈ 7.8 Ǻ, β ≈ 92°, Z = 4 formula units; residuals were 0.037, 0.036 for 2197, 1654 'observed' reflections for X = Cl , Br respectively. As in the iodide, the complexes are infinite polymers, with successive bismuth atoms bridged by the two halides and one sulfur atom of the ligand , which also chelates each bismuth. The structure determination of C5H5NCONEt2]2 [Cl5Bi(NC5H5)], isostructural with its thiocarbamoyl analogue, is also recorded.


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