Epitaxial growth and thermoelectric properties of c-axis oriented Bi1−xPbxCuSeO single crystalline thin films

CrystEngComm ◽  
2015 ◽  
Vol 17 (45) ◽  
pp. 8697-8702 ◽  
Author(s):  
Xiaolin Wu ◽  
Jiang-Long Wang ◽  
Hongrui Zhang ◽  
Shufang Wang ◽  
Shengjun Zhai ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Single Crystalline

Enhanced thermoelectric performance of c-axis oriented Bi1−xPbxCuSeO single crystalline thin films.

scholarly journals Benchmark characterization of the thermoelectric properties of individual single-crystalline CdS nanowires by a H-type sensor

RSC Advances ◽  
2017 ◽  
Vol 7 (41) ◽  
pp. 25298-25304 ◽  
Author(s):  
Haidong Wang ◽  
Dingshan Zheng ◽  
Xing Zhang ◽  
Hiroshi Takamatsu ◽  
Weida Hu
Keyword(s):  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Single Crystalline ◽  
Cds Nanowires ◽  
First Time

A precision H-type sensor method has been developed to measure the thermoelectric performance of individual single-crystalline CdS nanowires for the first time.

scholarly journals The effect of post-deposition annealing conditions on structural and thermoelectric properties of sputtered copper oxide films

RSC Advances ◽  
2020 ◽  
Vol 10 (49) ◽  
pp. 29394-29401
Author(s):  
Chandrasekaran Abinaya ◽  
Kevin Bethke ◽  
Virgil Andrei ◽  
Jonas Baumann ◽  
Beatrix Pollakowski-Herrmann ◽  
...  
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Thermoelectric Properties ◽  
Oxide Films ◽  
Thermoelectric Performance ◽  
Annealing Atmosphere ◽  
Oxide Thin Films ◽  
Post Deposition Annealing ◽  
Annealing Conditions ◽  
Post Deposition

This study reveals the interplay between the composition and thermoelectric performance of mixed copper oxide thin films, which can be finely adjusted by varying the annealing atmosphere.

Atomic Structure of Y2O3:Eu/LaA1O3 Interfaces

2000 ◽  
Vol 6 (S2) ◽  
pp. 1058-1059
Author(s):  
H-J. Gao ◽  
X.D. Fan ◽  
D. Kumar ◽  
K.G. Cho ◽  
R.K. Singh ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Atomic Structure ◽  
Large Scale ◽  
Lattice Mismatch ◽  
Fluorite Structure ◽  
Rhombohedral Structure ◽  
Contrast Imaging ◽  
Single Crystalline ◽  
Scale Integration

There has been intense interest in preparing single crystalline yttrium oxide (Y2O3) thin films for applications in ultra-large scale integration (ULSI) gate insulators, ULSI capacitors, and, by addition of suitable dopant species, for electroluminescent devices. Y2O3 has a C-type rare-earth sesquioxide structure, closely related to the fluorite structure with a cell parameter a= 1.060 nm and space group Th (Ia3). LaAIO3 (LAO) is a rhombohedral structure with lattice parameters a = 0.378 nm, θ ≤ 90.5°. The lattice mismatch with the <110> direction of the YO is therefore less than 0.8%, and so we would anticipate epitaxial growth of single crystalline YO thin films on the LAO (001) substrate to be feasible. Eu activated YO thin films were deposited by laser ablation on (001) LAO substrates. TEM bright field images and electron diffraction patterns were recorded in a Philips EM-400 electron microscope operated at lOOkV. Z-contrast imaging was conducted in a VG HB603 STEM at 300kV. In this presentation, we will report the epitaxial growth of YO thin films doped with ∼ wt 4% Eu on a LaAlO3 substrate, and the atomic structure of the interface.

Epitaxial Growth and Ferroelectric Properties of PbTiO3Nanoislands and Thin Films Grown on Single-Crystalline Pt Films

2008 ◽  
Vol 47 (9) ◽  
pp. 7505-7509 ◽  
Author(s):  
Hironori Fujisawa ◽  
Yoshihiro Seioh ◽  
Masayoshi Kume ◽  
Masaru Shimizu
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Ferroelectric Properties ◽  
Single Crystalline ◽  
Pt Films

Evolution of nanostructured single-phase CoSb3 thin films by low-energy ion beam induced mixing and their thermoelectric performance

2017 ◽  
Vol 19 (36) ◽  
pp. 24886-24895 ◽  
Author(s):  
Manju Bala ◽  
Srashti Gupta ◽  
Sanjeev K. Srivastava ◽  
Sankarakumar Amrithapandian ◽  
Tripurari S. Tripathi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermoelectric Properties ◽  
Single Phase ◽  
Ion Beam ◽  
Low Energy ◽  
Thermoelectric Performance

We report that a nanostructured CoSb3 thin film in a single phase can be synthesized by ion beam processing of Co/Sb bilayer thin films with better thermoelectric properties.

Epitaxial growth and thermoelectric properties of TiNiSn and Zr0.5Hf0.5NiSn thin films

2011 ◽  
Vol 520 (3) ◽  
pp. 1010-1014 ◽  
Author(s):  
Tino Jaeger ◽  
Christian Mix ◽  
Michael Schwall ◽  
Xeniya Kozina ◽  
Joachim Barth ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Thermoelectric Properties

scholarly journals Thermoelectric Properties of Cu2Se Nano-Thin Film by Magnetron Sputtering

Materials ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 2075
Author(s):  
Liangliang Yang ◽  
Jiangtao Wei ◽  
Yuanhao Qin ◽  
Lei Wei ◽  
Peishuai Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Large Scale ◽  
Absolute Temperature ◽  
Thermoelectric Performance ◽  
Tem Analysis ◽  
Performance Factor

Thermoelectric technology can achieve mutual conversion between thermoelectricity and has the unique advantages of quiet operation, zero emissions and long life, all of which can help overcome the energy crisis. However, the large-scale application of thermoelectric technology is limited by its lower thermoelectric performance factor (ZT). The thermoelectric performance factor is a function of the Seebeck coefficient, electrical conductivity, thermal conductivity and absolute temperature. Since these parameters are interdependent, increasing the ZT value has always been a challenge. Here, we report the growth of Cu2Se thin films with a thickness of around 100 nm by magnetron sputtering. XRD and TEM analysis shows that the film is low-temperature α-Cu2Se, XPS analysis shows that about 10% of the film’s surface is oxidized, and the ratio of copper to selenium is 2.26:1. In the range of 300–400 K, the maximum conductivity of the film is 4.55 × 105 S m−1, which is the maximum value reached by the current Cu2Se film. The corresponding Seebeck coefficient is between 15 and 30 µV K−1, and the maximum ZT value is 0.073. This work systematically studies the characterization of thin films and the measurement of thermoelectric properties and lays the foundation for further research on nano-thin-film thermoelectrics.

Enhanced Power Factor of Single Crystalline Lead Telluride Nanowire

2017 ◽  
Vol 901 ◽  
pp. 50-54
Author(s):  
Dedi ◽  
I Dewa Putu Hermida ◽  
Indah Primadona ◽  
Yang Yuan Chen
Keyword(s):  
Electrical Conductivity ◽  
Size Effect ◽  
Thermoelectric Power ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Lead Telluride ◽  
Thermoelectric Performance ◽  
Temperature Dependent ◽  
Single Crystalline

We present the thermoelectric properties of individual PbTe (lead telluride) nanowire (NW) grown by a stress induced method. Temperature-dependent thermoelectric power and electrical conductivity in PbTe NW with diameter 125 nm were investigated in temperature ranging of 300−400 K. The PbTe NW was found to have a Seebeck coeficient S and electrical conductivity σ of −121 μV K−1 and 138 S cm−1 at 300 K, respectively. The calculated power factor (PF) of PbTe NW (d = 125 nm) demonstrate an enhancement, wich is higher than that have been previously reported in PbTe NWs. Such an enhanced thermoelectric performance can in part be attributed to the size effect of nanowires.

Sign in / Sign up

Export Citation Format

Share Document