Epitaxial growth and thermoelectric properties of TiNiSn and Zr0.5Hf0.5NiSn thin films

2011 ◽  
Vol 520 (3) ◽  
pp. 1010-1014 ◽  
Author(s):  
Tino Jaeger ◽  
Christian Mix ◽  
Michael Schwall ◽  
Xeniya Kozina ◽  
Joachim Barth ◽  
...  
CrystEngComm ◽  
2015 ◽  
Vol 17 (45) ◽  
pp. 8697-8702 ◽  
Author(s):  
Xiaolin Wu ◽  
Jiang-Long Wang ◽  
Hongrui Zhang ◽  
Shufang Wang ◽  
Shengjun Zhai ◽  
...  

Enhanced thermoelectric performance of c-axis oriented Bi1−xPbxCuSeO single crystalline thin films.


1999 ◽  
Vol 606 ◽  
Author(s):  
Keishi Nishio ◽  
Jirawat Thongrueng ◽  
Yuichi Watanabe ◽  
Toshio Tsuchiya

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).


2021 ◽  
pp. 130119
Author(s):  
Ik-Jae Lee ◽  
Hee Seob Kim ◽  
Young Duck Yun ◽  
Seen-Woong Kang ◽  
Hyo-Yun Kim ◽  
...  

Author(s):  
Dong Han ◽  
Rahma Moalla ◽  
Ignasi Fina ◽  
Valentina M. Giordano ◽  
Marc d’Esperonnat ◽  
...  

Optik ◽  
2020 ◽  
Vol 206 ◽  
pp. 163435
Author(s):  
K. Mahmood ◽  
Jolly Jacob ◽  
M. Ibrahim ◽  
A. Ail ◽  
N. Amin ◽  
...  

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jose Recatala-Gomez ◽  
Pawan Kumar ◽  
Ady Suwardi ◽  
Anas Abutaha ◽  
Iris Nandhakumar ◽  
...  

Abstract The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.


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