Atomic layer deposition of Y2O3 films using heteroleptic liquid (iPrCp)2Y(iPr-amd) precursor
2014 ◽
Vol 2
(43)
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pp. 9240-9247
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Keyword(s):
The Y2O3 films grown with a new and heteroleptic liquid Y precursor, (iPrCp)2Y(iPr-amd), have been investigated with chemical properties of precursor, atomic layer deposition process, and material characterization of the deposited film and its non-volatile resistive switching behaviour.
2014 ◽
Vol 78
◽
pp. 1243-1253
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2020 ◽
Vol 38
(2)
◽
pp. 022418
2011 ◽
Vol 171
(1)
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pp. 345-349
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2018 ◽
Vol 57
(6S2)
◽
pp. 06JF05
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2017 ◽
Vol 35
(1)
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pp. 01B107
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