Role of vacancies to p-type semiconducting properties of SiGe nanowires
2014 ◽
Vol 2
(32)
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pp. 6536-6546
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Keyword(s):
On basis of the first-principle calculations, vacancies are proven to play important roles in p-type semiconducting properties of Si1−xGex nanowires (NW) and Ge/Si core/shell NW.