DFT coupled with NEGF study of the electronic properties and ballistic transport performances of 2D SbSiTe3

Nanoscale ◽  
2020 ◽  
Vol 12 (18) ◽  
pp. 9958-9963 ◽  
Author(s):  
Xuemin Hu ◽  
Hengze Qu ◽  
Lili Xu ◽  
Wenqiang Liu ◽  
Tingting Guo ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
Ballistic Transport ◽  
Wide Band ◽  
Valence Band Maximum ◽  
First Principle ◽  
Wide Band Gap ◽  
Short Channel ◽  
First Principle Calculations ◽  
Channel Effect ◽  
P Type

By first-principle calculations, we predicted that monolayer SbSiTe3 possesses a wide band gap with a flat valence band maximum. The p-type field effect transistors can effectively suppress the short channel effect at sub-10 nm.

Theoretical Analysis of the DOS and Band Structural Properties of Ti1-XSnxO2 Solid Solutions

2012 ◽  
Vol 465 ◽  
pp. 33-36
Author(s):  
Zhi Dong Lin ◽  
Wen Long Song ◽  
Ju Cheng Zheng
Keyword(s):  
Band Gap ◽  
Solid Solutions ◽  
Density Functional ◽  
Wide Band ◽  
Low Energy ◽  
Low Density ◽  
First Principle ◽  
Wide Band Gap ◽  
Functional Theory ◽  
First Principle Calculations

The band structure and density of states (DOS) of Ti1-xSnxO2 solid solutions with x=0, 1/8, 1/4, 1/2 and 1 were investigated by means of the first-principle calculations based on density functional theory. The result indicated that band gap and Fermi level of TiO2-SnO2 vary continuously from those of pure TiO2 to those of Sn content increasing. In addition, the DOS moves towards low energy and the bang gap is broadened with growing value of x. The wide band gap and the low density of the states in the conduction band result in the enhancement of photoactivity in Ti1-xSnxO2.

Wide band gap and p-type conductive Cu-Nb-O films

2011 ◽  
Vol 5 (4) ◽  
pp. 153-155 ◽  
Author(s):  
Seiji Yamazoe ◽  
Shunsuke Yanagimoto ◽  
Takahiro Wada
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
P Type

A pathway to p-type wide-band-gap semiconductors

2009 ◽  
Vol 95 (17) ◽  
pp. 172109 ◽  
Author(s):  
Anderson Janotti ◽  
Eric Snow ◽  
Chris G. Van de Walle
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
P Type

Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors

2021 ◽  
pp. 54-70
Author(s):  
Raj Kumar ◽  
Shashi Bala ◽  
Arvind Kumar
Keyword(s):  
Performance Analysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
High Mobility ◽  
Short Channel Effects ◽  
Short Channel ◽  
Comparative Performance ◽  
Channel Effects ◽  
And Performance

To have enhanced drive current and diminish short channel effects, planer MOS transistors have migrated from single-gate devices to three-dimensional multi-gate MOSFETs. The gate-all-around nanowire field-effect transistor (GAA NWFET) and nanotube or double gate-all-around field-effect transistors (DGGA-NTFET) have been proposed to deal with short channel effects and performance relates issues. Nanowire and nanotube-based field-effect transistors can be considered as leading candidates for nanoscale devices due to their superior electrostatic controllability, and ballistic transport properties. In this work, the performance of GAA NWFETs and DGAA-NT FETs will be analyzed and compared. III-V semiconductor materials as a channel will also be employed due to their high mobility over silicon. Performance analysis of junctionless nanowire and nanotube FETs will also be compared and presented.

scholarly journals A wide-band-gap p-type thermoelectric material based on quaternary chalcogenides of Cu2ZnSnQ4 (Q=S,Se)

2009 ◽  
Vol 94 (20) ◽  
pp. 202103 ◽  
Author(s):  
Min-Ling Liu ◽  
Fu-Qiang Huang ◽  
Li-Dong Chen ◽  
I-Wei Chen
Keyword(s):  
Band Gap ◽  
Thermoelectric Material ◽  
Wide Band ◽  
Wide Band Gap ◽  
P Type

scholarly journals GaN Based p-n Structures Grown on SiC Substrates

1996 ◽  
Vol 1 ◽  
Author(s):  
V.A. Dmitriev
Keyword(s):  
Band Gap ◽  
Bright Light ◽  
Wide Band ◽  
Injection Laser ◽  
Light Emitters ◽  
Wide Band Gap ◽  
High Quality ◽  
P Type

Wide band gap nitrides(InN, GaN, AlN) have been considered promising optoelectronics materials for many years [1]. Recently two main technological problems in the nitrides were overcome: (1)high quality layers has been grown on both sapphire and SiC substrates and(2) p-type GaN and AlGaN material has been obtained. These achievements resulted in the fabrication of bright light emitters in the violet, blue and green spectral regions [2].First injection laser has been demonstrated [3]. This paper reviews results obtained over the last few years on nitride p-n junctions, particularly on GaN based p-n junctions grown on SiC substrates. We will consider GaN p-n junctions, AlGaN p-n junctions, GaN and AlGaN p-i-n structures, and, finally, GaN/SiC p-n structures.

Research on the Preparation Technology of GaN Ultraviolet Photoelectric Detector

2013 ◽  
Vol 717 ◽  
pp. 205-209 ◽  
Author(s):  
Yuan Yuan Sun ◽  
Xi He Zhang ◽  
Qiu Rui Jia ◽  
Zheng Li ◽  
Shi Bo Liu
Keyword(s):  
Optoelectronic Devices ◽  
Wide Band ◽  
Semiconductor Materials ◽  
Wide Band Gap ◽  
Preparation Technology ◽  
Optimization Of Parameters ◽  
Growth Method ◽  
P Type ◽  
Growth Quality ◽  
Gan Film

GaN semiconductor was one of the most promising semiconductor materials with direct wide band gap transition. It was regarded as one of the most desirable materials to prepare short wavelength optoelectronic devices for the good optoelectronic properties and excellent mechanical behavior. In this paper, n and p-type GaN films were prepared on Al2O3 substrates by MOCVD. Through the optimization of parameters, we obtained effective in doped Mg and carrier concentration for 1019. MSM structural ultraviolet photoelectric devices were prepared on GaN film by two step epitaxy growth method. The highest transmittance and best epitaxial growth quality has been gained at 570°C for buffer layer of the samples.

Computational Prediction and Experimental Realization of p-Type Carriers in the Wide-Band-Gap Oxide SrZn1–xLixO2

2018 ◽  
Vol 57 (19) ◽  
pp. 11874-11883 ◽  
Author(s):  
Christos A. Tzitzeklis ◽  
Jyoti K. Gupta ◽  
Matthew S. Dyer ◽  
Troy D. Manning ◽  
Michael J. Pitcher ◽  
...  
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Computational Prediction ◽  
Wide Band Gap ◽  
Experimental Realization ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document