Tuning memory performances from WORM to flash or DRAM by structural tailoring with different donor moieties

2014 ◽  
Vol 2 (36) ◽  
pp. 7674-7680 ◽  
Author(s):  
Feng Zhou ◽  
Jing-Hui He ◽  
Quan Liu ◽  
Pei-Yang Gu ◽  
Hua Li ◽  
...  

Four donor–acceptor organic molecules (HATT, HDTT, HETT and HRTT) consisting of different electron donors (phenol, triphenylamine, benzene and carbazole) and the same electron acceptor (triazole) were used as the active layer in NVM (nonvolatile memory) devices.

2015 ◽  
Vol 4 (3) ◽  
pp. 322-326 ◽  
Author(s):  
Walaa Elsawy ◽  
Myungwoo Son ◽  
Jisu Jang ◽  
Myung Jin Kim ◽  
Yongsung Ji ◽  
...  

2011 ◽  
Vol 23 (20) ◽  
pp. 4487-4497 ◽  
Author(s):  
Wen-Ya Lee ◽  
Tadanori Kurosawa ◽  
Shiang-Tai Lin ◽  
Tomoya Higashihara ◽  
Mitsuru Ueda ◽  
...  

2014 ◽  
Vol 2 (22) ◽  
pp. 4374-4378 ◽  
Author(s):  
Hung-Ju Yen ◽  
Hsinhan Tsai ◽  
Cheng-Yu Kuo ◽  
Wanyi Nie ◽  
Aditya D. Mohite ◽  
...  

Flexible nonvolatile memory devices were fabricated from benzodithiophene-based donor–donor and donor–acceptor 2D conjugated polymers with thermally/non-thermally recoverable memory behaviors.


1996 ◽  
Vol 433 ◽  
Author(s):  
Norifumi Fujimura ◽  
Tadashi Ishida ◽  
Takeshi Yoshimura ◽  
Taichiro Ito

AbstractWe have proposed ReMnO3 (Re:rare earth) thin films, as a new candidate for nonvolatile memory devices. In this paper, we try to fabricate (0001) oriented YMnO3 films on (111)MgO, (0001)ZnO:Al/(0001) sapphire and (111)Pt/(111)MgO using rf magnetron sputtering. We succeed in obtaining (0001) epitaxial YMnO3 films on (111) MgO and (0001)ZnO:Al/(0001)sapphire substrate, and polycrystalline films on (111)Pt/(1 11)MgO for the first time. Electrical property of the bottom electrode (ZnO:Al) changes with varying the deposition condition of YMnO3 films. However, we find an optimum deposition condition of ZnO:Al film such that it functions as a bottom electrode even after YMnO3 film deposition. The dielectric properties of the epitaxial and polycrystalline YMnO3 films are almost the same. The YMnO3 films show leaky electrical properties. This may be caused by a change in the valence electron of Mn from 3+.


2007 ◽  
Vol 91 (7) ◽  
pp. 073511 ◽  
Author(s):  
Liang Chen ◽  
Yidong Xia ◽  
Xuefei Liang ◽  
Kuibo Yin ◽  
Jiang Yin ◽  
...  

Author(s):  
Shimpei Goto ◽  
Yuya Nitta ◽  
Nicolas Oliveira Decarli ◽  
Leonardo E de Sousa ◽  
Partycja Stachelek ◽  
...  

A new twisted donor–acceptor–donor (D–A–D) multi-photofunctional organic molecule comprising of phenoselenazine as the electron-donors (Ds) and dibenzo[a,j]phenazine (DBPHZ) as the electron-acceptor (A) has been developed. The developed selenium-incorporated D–A–D compound...


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