New Donor–Acceptor Oligoimides for High-Performance Nonvolatile Memory Devices

2011 ◽  
Vol 23 (20) ◽  
pp. 4487-4497 ◽  
Author(s):  
Wen-Ya Lee ◽  
Tadanori Kurosawa ◽  
Shiang-Tai Lin ◽  
Tomoya Higashihara ◽  
Mitsuru Ueda ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Performance ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Donor Acceptor

Isoindigo-Based Donor–Acceptor Conjugated Polymers for Air-Stable Nonvolatile Memory Devices

2015 ◽  
Vol 4 (3) ◽  
pp. 322-326 ◽  
Author(s):  
Walaa Elsawy ◽  
Myungwoo Son ◽  
Jisu Jang ◽  
Myung Jin Kim ◽  
Yongsung Ji ◽  
...  
Keyword(s):  
Conjugated Polymers ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Donor Acceptor

Flexible memory devices with tunable electrical bistability via controlled energetics in donor–donor and donor–acceptor conjugated polymers

2014 ◽  
Vol 2 (22) ◽  
pp. 4374-4378 ◽  
Author(s):  
Hung-Ju Yen ◽  
Hsinhan Tsai ◽  
Cheng-Yu Kuo ◽  
Wanyi Nie ◽  
Aditya D. Mohite ◽  
...  
Keyword(s):  
Conjugated Polymers ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Electrical Bistability ◽  
Nonvolatile Memory Devices ◽  
Donor Acceptor

Flexible nonvolatile memory devices were fabricated from benzodithiophene-based donor–donor and donor–acceptor 2D conjugated polymers with thermally/non-thermally recoverable memory behaviors.

One-step fabrication of CdS:Mo–CdMoO4core–shell nanoribbons for nonvolatile memory devices with high resistance switching

2017 ◽  
Vol 5 (25) ◽  
pp. 6156-6162 ◽  
Author(s):  
Ni Zheng ◽  
Zhibin Shao ◽  
Feifei Xia ◽  
Tianhao Jiang ◽  
Xiaofeng Wu ◽  
...  
Keyword(s):  
High Resistance ◽  
Nonvolatile Memory ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Core Shell ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
One Step ◽  
Effect Transistor

A one-step fabrication of CdS:Mo–CdMoO4core–shell nanoribbons (NR) was achieved for applications in high performance nano-field-effect transistor (FET)-based nonvolatile memory (NVM) device.

Tuning memory performances from WORM to flash or DRAM by structural tailoring with different donor moieties

2014 ◽  
Vol 2 (36) ◽  
pp. 7674-7680 ◽  
Author(s):  
Feng Zhou ◽  
Jing-Hui He ◽  
Quan Liu ◽  
Pei-Yang Gu ◽  
Hua Li ◽  
...  
Keyword(s):  
Active Layer ◽  
Electron Acceptor ◽  
Nonvolatile Memory ◽  
Organic Molecules ◽  
Electron Donors ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Donor Acceptor

Four donor–acceptor organic molecules (HATT, HDTT, HETT and HRTT) consisting of different electron donors (phenol, triphenylamine, benzene and carbazole) and the same electron acceptor (triazole) were used as the active layer in NVM (nonvolatile memory) devices.

New high performance digital memory devices fabricated with DNA and DNA-mimics

2017 ◽  
Vol 4 (3) ◽  
pp. 423-430 ◽  
Author(s):  
Jinseok Lee ◽  
Yongjin Kim ◽  
Changsub Kim ◽  
Moonhor Ree
Keyword(s):  
Nonvolatile Memory ◽  
High Performance ◽  
Memory Devices ◽  
Digital Memory ◽  
Nonvolatile Memory Devices ◽  
Brush Polymers

We report the first digital nonvolatile memory devices fabricated with DNA and DNA-mimicking brush polymers.

Fabrication of YMnO3 Films: New Candidate for Non-Volatile Memory Devices

1996 ◽  
Vol 433 ◽  
Author(s):  
Norifumi Fujimura ◽  
Tadashi Ishida ◽  
Takeshi Yoshimura ◽  
Taichiro Ito
Keyword(s):  
Nonvolatile Memory ◽  
Valence Electron ◽  
Bottom Electrode ◽  
Rf Magnetron Sputtering ◽  
Film Deposition ◽  
Deposition Condition ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Nonvolatile Memory Devices ◽  
First Time

AbstractWe have proposed ReMnO3 (Re:rare earth) thin films, as a new candidate for nonvolatile memory devices. In this paper, we try to fabricate (0001) oriented YMnO3 films on (111)MgO, (0001)ZnO:Al/(0001) sapphire and (111)Pt/(111)MgO using rf magnetron sputtering. We succeed in obtaining (0001) epitaxial YMnO3 films on (111) MgO and (0001)ZnO:Al/(0001)sapphire substrate, and polycrystalline films on (111)Pt/(1 11)MgO for the first time. Electrical property of the bottom electrode (ZnO:Al) changes with varying the deposition condition of YMnO3 films. However, we find an optimum deposition condition of ZnO:Al film such that it functions as a bottom electrode even after YMnO3 film deposition. The dielectric properties of the epitaxial and polycrystalline YMnO3 films are almost the same. The YMnO3 films show leaky electrical properties. This may be caused by a change in the valence electron of Mn from 3+.

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