scholarly journals Inorganic–organic hybrid polymer with multiple redox for high-density data storage

2014 ◽  
Vol 5 (9) ◽  
pp. 3404-3408 ◽  
Author(s):  
Benlin Hu ◽  
Chengyuan Wang ◽  
Jiangxin Wang ◽  
Junkuo Gao ◽  
Kai Wang ◽  
...  
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
High Density ◽  
Hybrid Polymer ◽  
Density Data ◽  
Resistive Switching Memory ◽  
Organic Hybrid ◽  
Switching Memory

A multi-redox polyoxometalate-based hybrid polymer has been demonstrated to show multilevel resistive switching memory behaviors.

Nanoscale Topotactic Phase Transformation in SrFeO x Epitaxial Thin Films for High‐Density Resistive Switching Memory

2019 ◽  
Vol 31 (49) ◽  
pp. 1903679 ◽  
Author(s):  
Junjiang Tian ◽  
Haijun Wu ◽  
Zhen Fan ◽  
Yang Zhang ◽  
Stephen J. Pennycook ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Resistive Switching ◽  
High Density ◽  
Epitaxial Thin Films ◽  
Resistive Switching Memory ◽  
Switching Memory

HfO 2 -based resistive switching memory with CNTs electrode for high density storage

2017 ◽  
Vol 132 ◽  
pp. 19-23 ◽  
Author(s):  
W.K. Cheng ◽  
F. Wang ◽  
Y.M. Han ◽  
Z.C. Zhang ◽  
J.S. Zhao ◽  
...  
Keyword(s):  
Resistive Switching ◽  
High Density ◽  
Resistive Switching Memory ◽  
Switching Memory

Lead-free, air-stable hybrid organic–inorganic perovskite resistive switching memory with ultrafast switching and multilevel data storage

Nanoscale ◽  
2018 ◽  
Vol 10 (18) ◽  
pp. 8578-8584 ◽  
Author(s):  
Bohee Hwang ◽  
Jang-Sik Lee
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
Lead Free ◽  
Multilevel Data ◽  
Resistive Switching Memory ◽  
Fast Switching ◽  
Free Air ◽  
Stable Hybrid ◽  
Switching Memory

The resistive switching memory based on a lead-free bismuth halide perovskite exhibits fast switching, multilevel data storage, and long-term air stability.

Size-dependent Temperature Instability in NiO–based Resistive Switching Memory

2010 ◽  
Vol 1250 ◽  
Author(s):  
Daniele Ielmini ◽  
Federico Nardi ◽  
Carlo Cagli ◽  
Andrea L. Lacaita
Keyword(s):  
Resistive Switching ◽  
High Density ◽  
High Current ◽  
Data Retention ◽  
Temperature Instability ◽  
Resistive Switching Memory ◽  
Size Dependent ◽  
Nonvolatile Memories ◽  
Points Of View ◽  
Switching Memory

AbstractResistive switching memory (RRAM) is attracting a strong interest as novel nonvolatile memories for high-density storage. Anyway this technology has to overcome two main issues before its use in real applications which are the high current needed for program operations and data retention stability. These two problems are here investigated from experimental and theoretical points of view to clarify the possibilities of NiO RRAMs to become a real competitive alternative to mainstream Flash technology.

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