Low temperature chlorobenzene catalytic oxidation over MnOx/CNTs with the assistance of ozone

RSC Advances ◽  
2015 ◽  
Vol 5 (20) ◽  
pp. 15103-15109 ◽  
Author(s):  
Dongdong Jin ◽  
Zhiyuan Ren ◽  
Zhaoxia Ma ◽  
Fu liu ◽  
Hangsheng Yang
Keyword(s):  
Activation Energy ◽  
Low Temperature ◽  
Apparent Activation Energy ◽  
Catalytic Oxidation ◽  
Complete Oxidation ◽  
P Type

O3 promotes chlorobenzene catalytic oxidation over p-type MnOx/CNTs between 80–240 °C. A CB complete oxidation of 95% is achieved below 120 °C. The reaction follows the L–H mechanism with apparent activation energy of 15.0 kJ mol−1.

Apparent Activation Energy in Low Temperature Aging of Y-TZP Ceramics

2010 ◽  
Vol 105-106 ◽  
pp. 100-103
Author(s):  
Qi Fei Xie ◽  
Cheng Wang ◽  
Qing Feng Zan ◽  
Li Min Dong
Keyword(s):  
Activation Energy ◽  
Low Temperature ◽  
Apparent Activation Energy ◽  
Coordinate Systems ◽  
X Ray Diffraction ◽  
X Ray ◽  
Low Temperature Aging ◽  
Diffraction Patterns ◽  
Straight Lines ◽  
Temperature Aging

Apparent activation energy in low temperature aging of two kinds of Y-TZP ceramic was studied in this paper. The ceramics were processed into small pieces, and aging in 100°C, 110°C, 120°C, 130°C and 140°C respectively. The content of monoclinic phase was calculated by X-ray diffraction patterns and the microstructure was scanned by SEM. According to MAJ law and Arrhenius formation, straight lines were fitted in coordinate systems of ln (ln (1/(1 − f )))-ln t and ln b-1/T, and the kinetic parameters of low temperature aging of Y-TZP ceramic were calculated according to these lines. The results revealed that grain size significantly affected apparent activation energy of Y-TZP ceramics.

Electrical and thermal properties of Na2SO4 doped with NaVO3, Ln2(SO4)3 (Ln = Eu, Pr)

1983 ◽  
Vol 61 (7) ◽  
pp. 1557-1561 ◽  
Author(s):  
Nobuhito Imanaka ◽  
Gin-Ya Adachi ◽  
Jiro Shiokawa
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Phase Transformation ◽  
Thermal Properties ◽  
Low Temperature ◽  
Apparent Activation Energy ◽  
Solid Electrolytes ◽  
A Value

In order to develop useful solid electrolytes for SO2 detectors, Na2SO4, Na2SO4–Eu2(SO4)3, Na2SO4–NaVO3, and Na2SO4–NaVO3–Ln2(SO4)3 (Ln = Eu, Pr) systems have been prepared, and their electrical and thermal properties have been measured. By doping Na2SO4 with Eu2(SO4)3, the electrical conductivity increases and the apparent activation energy of the Na2SO4–Eu2(SO4)3 system shows a value between those of Na2SO4-III and Na2SO4-I. Addition of NaVO3 and Ln2(SO4)3 (Ln = Eu, Pr) to Na2SO4 suppressed the phase transformation, by stabilizing the structure of the Na2SO4-I phase even at a relatively low temperature.

scholarly journals STUDY OF THERMOMETRIC MATERIAL Er1-xScxNiSb. II. EXPERIMENTAL RESULTS

2021 ◽  
Vol 82 (3) ◽  
pp. 5-11
Author(s):  
Volodymyr Krayovskyy ◽  
◽  
Volodymyr Pashkevych ◽  
Andriy Horpenuk ◽  
Volodymyr Romaka ◽  
...  
Keyword(s):  
Activation Energy ◽  
Low Temperature ◽  
Fermi Level ◽  
Valence Band ◽  
Structural Defects ◽  
Type Semiconductor ◽  
Thermopower Coefficient ◽  
Temperature Activation ◽  
P Type ◽  
Thermometric Material

The results of a comprehensive study of the crystal and electronic structures, kinetic and energetic performances of the semiconductor thermometric material Er1-xScxNiSb, (x=0–0.1) are presented. Microprobe analysis of the concentration of atoms on the surface of Er1-xScxNiSb samples established their correspondence to the initial compositions of the charge, and the diffractograms of the samples are indexed in the structural type of MgAgAs. Because the atomic radius Sc (rSc=0.164 nm) is smaller than that of Er (rEr=0.176 nm), it is logical to reduce the values of the unit cell's period a(x) Er1-xScxNiSb, which correlate with the results of mathematical modeling. The temperature dependences of the resistivity ln(ρ(1/T)) contain high- and low-temperature activation regions, which are specific for semiconductors and indicate the location of the Fermi level in the bandgap, and positive values of the thermopower coefficient a(x, T) specify its position – near the valence band . This result does not agree with the results of modeling the electronic structure for its ordered version. The presence of a low-temperature activation region on the ln(ρ(1/T)) p-ErNiSb dependence with an activation energy =0.4 meV indicates the compensation of the sample provided by acceptors and donors of unknown origin. A decrease in the values of the resistivity ρ(x, T) and the thermopower coefficient a(x, T) points to an increase in the concentration of holes in p-Er1- xScxNiSb in the area of concentrations x=0–0.03. This is possible in a p-type semiconductor only by increasing the concentration of the main current carriers, which are holes. The fact of increasing the concentration of acceptors in Er1-xScxNiSb at insignificant concentrations of impurity atoms is also indicated by the nature of the change in the values of the activation energy of holes from the Fermi level to the valence band . Consequently, if in p-ErNiSb the Fermi level was at a distance of 45.4 meV from the level of the valence band , then at the concentration Er1-xScxNiSb, x=0.01, the Fermi level shifted towards the valence band and was located at a distance of 13.6. Since the Fermi level reflects the ratio of ionized acceptors and donors in the semiconductor, its movement by x=0.01 to the valence band is possible either with an increase in the number of acceptors or a rapid decrease in the concentration of ionized donors. At even higher concentrations of Sc impurity in p-Er1-xScxNiSb, x≥0.03, low-temperature activation sites appear on the ln(ρ(1/T)) dependences, which is a sign of compensation and evidence of the simultaneous generation of acceptor and donor structural defects in the crystal nature. This is also indicated by the change in the position of the Fermi level in the bandgap of the semiconductor Er1-xScxNiSb, which is almost linearly removed from the level of the valence band : (x=0.05)=58.6 meV and (x=0.10)=88.1 meV. Such a movement of the Fermi level during doping of a p-type semiconductor is possible only if donors of unknown origin are generated. For a p-type semiconductor, this is possible only if the concentration of the main current carriers, which are free holes, is reduced, and donors are generated that compensate for the acceptor states. This conclusion is also confirmed by the behavior of the thermopower coefficient a(x, T) at concentrations x≥0.03. The results of structural, kinetic, and energy studies of the thermometric material Er1-xScxNiSb allow us to speak about a complex mechanism of simultaneous generation of structural defects of acceptor and donor nature. However, the obtained array of experimental information does not allow us to unambiguously prove the existence of a mechanism for generating donors and acceptors. The research article offers a solution to this problem. Having the experimental results of the drift rate of the Fermi level as the activation energy (x) from the Fermi level to the valence band by calculating the distribution of the density of electronic states (DOS) sought the degree of compensation, which sets the direction and velocity of the Fermi level as close as possible to the experimental results. DOS calculations are performed for all variants of the location of atoms in the nodes of the unit cell, and the degree of occupancy of all positions by their own and/or foreign atoms. It turned out that for ErNiSb the most acceptable option is one that assumes the presence of vacancies in positions 4a and 4c of the Er and Ni atoms, respectively. Moreover, the number of vacancies in the position Er (4a) is twice less than the number of vacancies in the position Ni (4c). This proportion is maintained for Er1-xScxNiSb. Vacancies in the positions of Er (4a) and Ni (4c) atoms Er1-xScxNiSb are structural defects of acceptor nature, which generate two acceptor zones and in the semiconductor. The introduction of impurity Sc atoms into the ErNiSb structure by substituting Er atoms in position 4a is also accompanied by the occupation of vacancies by Sc atoms and a reduction in their number. Occupying a vacancy, the Sc atom participates in the formation of the valence band and the conduction band of the semiconductor Er1-xScxNiSb, acting as a source of free electrons. We can also assume that the introduction of Sc atoms into the structure of the compound ErNiSb is accompanied by a process of ordering the structure of Er1-xScxNiSb and Ni atoms occupy vacancies in position 4c. This process also, however, 2 times slower, leads to a decrease in the concentration of structural defects of acceptor nature. In this case, Ni, giving valence electrons, now act as donors.

DLTS Study on Deep Levels Formed in Plasma Hydrogenated and Subsequently Annealed Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 547-552 ◽  
Author(s):  
Yue Long Huang ◽  
Eddy Simoen ◽  
Cor Claeys ◽  
Reinhart Job ◽  
Yue Ma ◽  
...  
Keyword(s):  
Activation Energy ◽  
Low Temperature ◽  
Annealing Temperature ◽  
Deep Level ◽  
Hydrogen Plasma ◽  
Plasma Exposure ◽  
Czochralski Silicon ◽  
Free Carriers ◽  
Shallow Donors ◽  
P Type

P-n junctions are created in p-type Czochralski silicon after a low temperature (270°C) hydrogen plasma exposure. This is attributed to the formation of hydrogen-related shallow donors. A deep level (E1) with an activation energy of about EC-0.12 eV is observed by DLTS measurement and assigned to a metastable state of the hydrogen-related shallow donors. At an annealing temperature of 340°C, the E1 centres disappear and oxygen thermal donors appear. The concentrations of the oxygen thermal donors are found typically to be 2-3 decades lower than that required for over-compensating the initial p-type doping and for contributing the excess free carriers.

Densification Mechanism of the Low Temperature Co-Fired Glass-Ceramic Substrate

2011 ◽  
Vol 492 ◽  
pp. 122-125
Author(s):  
Qing He ◽  
Zhi Ting Geng
Keyword(s):  
Activation Energy ◽  
Low Temperature ◽  
Apparent Activation Energy ◽  
Glass Ceramic ◽  
Ceramic Substrate ◽  
Raw Material ◽  
Sem Images ◽  
Densification Mechanism ◽  
Glass Ceramic Substrate

In this paper, application of multilayered circuit substrates has been studied, the glass ceramic (50%Al2O3-50%glass) with low temperature co-fired and good performance as the raw material was used, by means of calculating the apparent activation energy of densification in the experiment and observing the SEM images of glass ceramic substrate section, the densification mechanism of glass ceramic substrate sintering is analyzed.

Pt-Pd Nanoalloy for the Unprecedented Activation of Carbon-Fluorine Bond at Low Temperature

2019 ◽  
Author(s):  
Raghu Nath Dhital ◽  
keigo nomura ◽  
Yoshinori Sato ◽  
Setsiri Haesuwannakij ◽  
Masahiro Ehara ◽  
...  
Keyword(s):  
Activation Energy ◽  
Low Temperature ◽  
Dft Calculations ◽  
Bond Activation ◽  
Mild Conditions ◽  
Selective Transformation ◽  
Rate Determining Step ◽  
Highly Active ◽  
Harsh Conditions ◽  
Reaction Profile

Carbon-Fluorine (C-F) bonds are considered the most inert organic functionality and their selective transformation under mild conditions remains challenging. Herein, we report a highly active Pt-Pd nanoalloy as a robust catalyst for the transformation of C-F bonds into C-H bonds at low temperature, a reaction that often required harsh conditions. The alloying of Pt with Pd is crucial to activate C-F bond. The reaction profile kinetics revealed that the major source of hydrogen in the defluorinated product is the alcoholic proton of 2-propanol, and the rate-determining step is the reduction of the metal upon transfer of the <i>beta</i>-H from 2-propanol. DFT calculations elucidated that the key step is the selective oxidative addition of the O-H bond of 2-propanol to a Pd center prior to C-F bond activation at a Pt site, which crucially reduces the activation energy of the C-F bond. Therefore, both Pt and Pd work independently but synergistically to promote the overall reaction

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Sign in / Sign up

Export Citation Format

Share Document