Directed synthesis, growth process and optical properties of monodispersed CaWO4 microspheres via a sonochemical route

RSC Advances ◽  
2015 ◽  
Vol 5 (26) ◽  
pp. 19893-19899 ◽  
Author(s):  
Jira Janbua ◽  
Jitkasem Mayamae ◽  
Supamas Wirunchit ◽  
Rattanai Baitahe ◽  
Naratip Vittayakorn

Monodispersed calcium tungstate (CaWO4) microspheres were synthesized successfully via a sonochemical process.

2014 ◽  
Vol 976 ◽  
pp. 25-29
Author(s):  
Roberto Castillo-Ojeda ◽  
Joel Diaz-Reyes ◽  
Miguel Galván-Arellano ◽  
Ramon Peña-Sierra

We have studied the optical properties of GaAs and AlxGa1-xAs thin films using low-temperature photoluminescence and Fourier transform infrared spectroscopy. The GaAs and its alloys were grown by MOCVD using solid arsenic instead of arsine, as the arsenic precursor. The gallium and aluminium precursors were trimethylgallium (TMGa) and trimethylaluminium (TMAl), respectively. Some difficulties for growing AlxGa1-xAs by solid-arsenic-based MOCVD system are the composition homogeneity of the layers and the oxygen and carbon incorporation during the growth process. The composition homogeneity of the films was evaluated by low-temperature photoluminescence. Infrared measurements on the samples allowed the identification of the residual impurities, which are carbon-substitutional, Ga2O3, molecular oxygen, humidity and two unidentified impurities. Samples grown at temperatures lower than 750°C were highly resistive, independently of the ratio V/III used; the samples grown at higher temperatures were n-type, as it was proved by Hall effect measurements.


2019 ◽  
Vol 15 (1) ◽  
pp. 29-34 ◽  
Author(s):  
Tomojit Chowdhury ◽  
Jungkil Kim ◽  
Erick C. Sadler ◽  
Chenyang Li ◽  
Seong Won Lee ◽  
...  

Metals ◽  
2018 ◽  
Vol 9 (1) ◽  
pp. 12 ◽  
Author(s):  
Hayk Khachatryan ◽  
Sung-Nam Lee ◽  
Kyoung-Bo Kim ◽  
Moojin Kim

In this study, we deposited aluminum (Al) films of different thicknesses on steel substrate and examined their phase, microstructure, and film growth process. We estimated that films of up to 30 nm thickness were mainly amorphous in nature. When the film thickness exceeded 30 nm, crystallization was observed. The further increase in film thickness triggered grain growth, and the formation of grains up to 40 nm occurred. In such cases, the Al film had a cross-grained structure with well-developed primary grains networks that were filled with small secondary grains. We demonstrated that the microstructure played a key role in optical properties. The films below 30 nm showed higher specular reflection, whereas thicker films showed higher diffuse reflections.


2013 ◽  
Vol 8 (1) ◽  
Author(s):  
Xiu-chun Yang ◽  
Jun-wei Hou ◽  
Yan Liu ◽  
Miao-miao Cui ◽  
Wei Lu

2010 ◽  
Vol 10 (11) ◽  
pp. 4752-4768 ◽  
Author(s):  
V. S. Marques ◽  
L. S. Cavalcante ◽  
J. C. Sczancoski ◽  
A. F. P. Alcântara ◽  
M. O. Orlandi ◽  
...  

2009 ◽  
Vol 129 (9) ◽  
pp. 1036-1041 ◽  
Author(s):  
Nobuaki Kitazawa ◽  
Dhebbajaji Yaemponga ◽  
Masami Aono ◽  
Yoshihisa Watanabe

2015 ◽  
Vol 50 (24) ◽  
pp. 8089-8103 ◽  
Author(s):  
J. C. Sczancoski ◽  
W. Avansi ◽  
M. G. S. Costa ◽  
M. Siu Li ◽  
V. R. Mastelaro ◽  
...  

1996 ◽  
Vol 423 ◽  
Author(s):  
R. Eckstein ◽  
D. Hofmann ◽  
Y. Makarov ◽  
St. G. Müller ◽  
G. Pensl ◽  
...  

AbstractExperimental and numerical analysis have been performed on the sublimation growth process of SiC bulk crystals. Crystallographic, electrical and optical properties of the grown silicon carbide (SIC) crystals have been evaluated by various characterization techniques. Numerical models for the global simulation of SiC bulk growth including heat and mass transfer and chemical processes are applied and experimentally verified.


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