Magnetron sputtered Cu doped SnS thin films for improved photoelectrochemical and heterojunction solar cells

RSC Advances ◽  
2014 ◽  
Vol 4 (74) ◽  
pp. 39343-39350 ◽  
Author(s):  
Malkeshkumar Patel ◽  
Abhijit Ray
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Ex Situ ◽  
Heterojunction Solar Cells ◽  
Junction Solar Cell ◽  
Sns Thin Films

This work describesex situCu-doped SnS demonstrating a largeJph= 3.2 mA cm−2as a photocathode and enhancedVOC= 465 mV in a hetero-junction solar cell.

Surface Passivation of p-GaTe Layered Crystals for Improved p-GaTe/n-InSe Heterojunction Solar Cells

2010 ◽  
Vol 1268 ◽  
Author(s):  
Krishna C. Mandal ◽  
Sandip Das ◽  
Ramesh Krishna ◽  
Peter G. Muzykov ◽  
Shuguo Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Current Density ◽  
Photoelectron Spectroscopy ◽  
Surface Passivation ◽  
Short Circuit ◽  
Solar Cell Performance ◽  
X Ray ◽  
Heterojunction Solar Cells

AbstractGaTe and GaTe:In single crystals were grown from high purity Ga (7N) and zone refined Te (>7N) precursor materials. InSe thin films were deposited by thermal evaporation onto the sulfur passivated GaTe:In substrates at various substrate temperatures from 450K-550K to fabricate p-GaTe:In/n-InSe heterojunction solar cells. Scanning electron microscopy (SEM), X-ray diffraction (XRD), electron probe microanalysis (EPMA), and X-ray photoelectron spectroscopy (XPS) were used to characterize GaTe:In crystals and InSe thin film surfaces. The current-voltage characteristics of p-GaTe:In/n-InSe solar cells were measured under dark and under illumination of 75mW/cm2. Dark J-V measurements showed that the reverse saturation current density (J0) decreased from 3.8 x 10-6 A/cm2 to 1.5 x 10-9 A/cm2 and the ideality factor was reduced from 2.04 to 1.15 as a result of surface passivation. Under illumination of 75 mW/cm2, the open-circuit voltage (Voc) increased from 0.54V to 0.68V and short-circuit current density (Jsc) increased from 7.19 mA/cm2 to 8.65 mA/cm2 for solar cells with surface passivated GaTe:In substrates, leading to an increased solar cell efficiency of 5.03%. EPMA measurements revealed that the InSe thin films deposited at 550 K on GaTe:In substrates were near stoichiometric with enhanced grain size contributing also to better solar cell performance.

Tuning the properties of RF sputtered tin sulphide thin films and enhanced performance in RF sputtered SnS thin films hetero-junction solar cell devices

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Patrick Akata Nwofe ◽  
Mutsumi Sugiyama
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cell ◽  
Short Circuit ◽  
Optical Absorption Coefficient ◽  
Optical Data ◽  
Working Pressure ◽  
Orthorhombic Crystal Structure ◽  
Junction Solar Cell ◽  
Sns Thin Films

AbstractTin sulphide (SnS) thin films were grown using the RF sputtering techniques. The working pressures (WP) were tuned between 0.70 and 4.00 Pa at fixed RF power of 100 W and deposition time of 2 min. X-ray diffractometry studies indicate that the films crystallized in the orthorhombic crystal structure and were single phase. The crystallite size increased up to a critical working pressure of 1.33 Pa and decreased thereafter with increased WP. Scanning electron microscopy (SEM) indicates that the films exhibit columnar grain structures. Energy dispersive spectroscopy indicates that the films are slightly Sn-rich. Transmittance and reflectance plots exhibits interference pattern, an indication that the films were of uniform thickness. Analysis from the optical data gives optical absorption coefficient (α) > 104 cm−1, and direct energy bandgap that exhibits relative decrease with the deposition conditions. Electrical studies from Hall effect measurements indicates that the films possess p-type electrical conductivity, and carrier concentration of 1016 cm−3 for films grown at WP of 1.33 Pa. The RF sputtered SnS thin films grown on Mo-substrates served as absorber layers to fabricate thin film hetero-junction solar cell devices in the substrate configuration with a cadmium sulphide (CdS) window partner. The best device yielded a short circuit current density of 25.94 mA/cm2, open circuit voltage of 0.087 V and an enhanced solar conversion efficiency of 0.60%. A world record value for RF-sputtered SnS/CdS based hetero-junction thin film solar cell devices.

SnS Thin Films in Chemically Deposited Solar Cell Structures

2007 ◽  
Vol 1012 ◽  
Author(s):  
David Avellaneda ◽  
M. T. S. Nair ◽  
P. K. Nair
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Photovoltaic Cell ◽  
Tin Sulfide ◽  
Glass Substrates ◽  
Toxic Material ◽  
Cell Structures ◽  
Sns Thin Films ◽  
Photovoltaic Characteristics

AbstractWe report photovoltaic cell structures on SnO2:F (TCO) coated glass substrates. Thin films of CdS, SnS, and CuS or PbS were deposited sequentially from chemical baths to produce the solar cell structures: SnO2:F-CdS- SnS (A)-CuS-Ag; SnO2:F-CdS- SnS (A)-PbS-Ag; and SnO2:F-CdS- SnS (B)-PbS-Ag. Heating SnS-CuS films results in the formation of Cu2SnS3, and sequential depositions of SnS and PbS to obtain solar cells produce stratified layers as required for solar cells. The photovoltaic characteristics, Voc 340 mV and Jsc 6 mA/cm2 in these structures suggest that absorber thin films based on tin sulfide are worth investigating as a relatively abundant and non-toxic material for solar cells.

scholarly journals GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 726
Author(s):  
Ray-Hua Horng ◽  
Yu-Cheng Kao ◽  
Apoorva Sood ◽  
Po-Liang Liu ◽  
Wei-Cheng Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Low Temperature ◽  
Triple Junction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Metal Line ◽  
Solar Simulator ◽  
Junction Solar Cell

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

Fabrication and characterization of CuPc and PCBM based organic solar cell with metal interlayer

2015 ◽  
Vol 12 (5) ◽  
pp. 413-420
Author(s):  
Muhammad Ahsan Naveed ◽  
A. Hussain ◽  
K. Islam ◽  
P. Akhter
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Impedance Spectroscopy ◽  
Organic Solar Cells ◽  
Organic Solar Cell ◽  
Silver Layer ◽  
Absorbance Spectrum ◽  
Heterojunction Solar Cells ◽  
Processing Cost ◽  
Donor Acceptor

Organic solar cells have potential as an alternative to conventional inorganic solar cell due to low processing cost, flexibility and easy fabrication technique. The goal of this paper is to study the characteristics of the CuPc and PCBM based organic solar cell by introducing a thin layer of Ag at the interface of donor (CuPc) and Acceptor (PCBM), their photovoltaic and optical properties were investigated. The heterojunction solar cells with and without silver inter layer were fabricated through thermal deposition in HR vacuum. The OPV solar cells were characterized using current-voltage graphs, absorbance spectrum and Impedance spectroscopy. Impedance spectroscopy was taken to identify the traps using series resistance, parallel resistance, and Impedance spectrums under different frequencies. Optical behaviors of these devices have been investigated with absorbance spectrum. Introducing Ag to interfacing point produced traps and these traps causes to decreased Voc, Isc, FF, and efficiency. The effect of silver layer at donor acceptor interface was studied.

Optimisation of diketopyrrolopyrrole:fullerene solar cell performance through control of polymer molecular weight and thermal annealing

2014 ◽  
Vol 2 (45) ◽  
pp. 19282-19289 ◽  
Author(s):  
Zhenggang Huang ◽  
Elisa Collado Fregoso ◽  
Stoichko Dimitrov ◽  
Pabitra Shakya Tuladhar ◽  
Ying Woan Soon ◽  
...  
Keyword(s):  
Molecular Weight ◽  
Solar Cells ◽  
Solar Cell ◽  
Thermal Annealing ◽  
Bulk Heterojunction ◽  
Cell Performance ◽  
Polymer Molecular Weight ◽  
Solar Cell Performance ◽  
Heterojunction Solar Cells ◽  
Bulk Heterojunction Solar Cells

The performance of bulk heterojunction solar cells based on a novel donor polymer DPP-TT-T was optimised by tuning molecular weight and thermal annealing.

scholarly journals Description of a Naphthoquinonic Crystal Produced by the Fungus Scytalidium cuboideum

Molecules ◽  
2018 ◽  
Vol 23 (8) ◽  
pp. 1905 ◽  
Author(s):  
Sarath Gutierrez ◽  
Kenya Hazell ◽  
John Simonsen ◽  
Seri Robinson
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Nuclear Magnetic Resonance ◽  
Solar Cells ◽  
Solar Cell ◽  
Material Science ◽  
Rare Occurrence ◽  
Crystalline Materials ◽  
Art Form ◽  
Pink Pigment

Intarsia was an art form popular between the 15th–18th centuries that used wood pigmented by spalting fungi to create detailed landscapes, portraits, and other imagery. These fungi are still used today in art but are also finding relevance in material science as elements of solar cells, textile dyes, and paint colorants. Here we show that the spalting fungus Scytalidium cuboideum (Sacc. and Ellis) Sigler and Kang produces a red/pink pigment that forms two distinct colors of crystals (red and orange)—a very rare occurrence. In addition, a second structure of the crystal is proved through nuclear magnetic resonance (NMR). This is only the second instance of a stable, naphthoquinone crystal produced by a fungus. Its discovery is particularly valuable for solar cell development, as crystalline materials have a higher electrical conductivity. Other fungi in this order have shown strong potential as thin films for solar cells.

Role of Surface Band Gap Widening in Cu(In, Ga)(Se, S)2 Thin-Films for the Photovoltaic Performance of ZnO/CdS/Cu(In, Ga)(Se, S)2 Heterojunction Solar Cells

2003 ◽  
Vol 763 ◽  
Author(s):  
U. Rau ◽  
M. Turcu
Keyword(s):  
Thin Films ◽  
Surface Layer ◽  
Solar Cells ◽  
Fermi Level ◽  
Band Gap ◽  
Photovoltaic Performance ◽  
Heterojunction Solar Cells ◽  
Fermi Level Pinning ◽  
Device Efficiency

AbstractNumerical simulations are used to investigate the role of the Cu-poor surface defect layer on Cu(In, Ga)Se2 thin-films for the photovoltaic performance of ZnO/CdS/Cu(In, Ga)Se2 heterojunction solar cells. We model the surface layer either as a material which is n-type doped, or as a material which is type-inverted due to Fermi-level pinning by donor-like defects at the interface with CdS. We further assume a band gap widening of this layer with respect to the Cu(In, Ga)Se2 bulk. This feature turns out to represent the key quality of the Cu(In, Ga)Se2 surface as it prevents recombination at the absorber/CdS buffer interface. Whether the type inversion results from n-type doping or from Fermi-level pinning is only of minor importance as long as the surface layer does not imply a too large number of excess defects in its bulk or at its interface with the normal absorber. With increasing number of those defects an n-type layer proofs to be less sensitive to material deterioration when compared to the type-inversion by Fermi-level pinning. For wide gap chalcopyrite solar cells the internal valence band offset between the surface layer and the chalcopyrite appears equally vital for the device efficiency. However, the unfavorable band-offsets of the ZnO/CdS/Cu(In, Ga)Se2 heterojunction limit the device efficiency because of the deterioration of the fill factor.

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