Hierarchical silicon nanostructured arrays via metal-assisted chemical etching

RSC Advances ◽  
2014 ◽  
Vol 4 (91) ◽  
pp. 50081-50085 ◽  
Author(s):  
Hao Lin ◽  
Ming Fang ◽  
Ho-Yuen Cheung ◽  
Fei Xiu ◽  
SenPo Yip ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Low Cost ◽  
Nanosphere Lithography ◽  
Cost Approach ◽  
Conventional Photolithography ◽  
Metal Assisted Chemical Etching ◽  
Nanostructured Arrays

Hierarchically configured nanostructures, such as nanograss and nanowalls, have been fabricatedviaa low-cost approach that combines metal-assisted chemical etching (MaCE), nanosphere lithography and conventional photolithography.

scholarly journals Fabrication and characterisation of GaAs nanopillars using nanosphere lithography and metal assisted chemical etching

RSC Advances ◽  
2016 ◽  
Vol 6 (36) ◽  
pp. 30468-30473 ◽  
Author(s):  
A. Cowley ◽  
J. A. Steele ◽  
D. Byrne ◽  
R. K. Vijayaraghavan ◽  
P. J. McNally
Keyword(s):  
Chemical Etching ◽  
Low Cost ◽  
Nanosphere Lithography ◽  
Fabrication Procedure ◽  
Metal Assisted Chemical Etching ◽  
Nanopillar Arrays ◽  
Lithography Technique

We present a low-cost fabrication procedure for the production of nanoscale periodic GaAs nanopillar arrays, using the nanosphere lithography technique as a templating mechanism and the electrochemical metal assisted etch process (MacEtch).

Wafer-Scale, Highly-Ordered Silicon Nanowires Produced by Step-and-Flash Imprint Lithography and Metal-Assisted Chemical Etching

2012 ◽  
Vol 1512 ◽  
Author(s):  
Jian-Wei Ho ◽  
Qixun Wee ◽  
Jarrett Dumond ◽  
Li Zhang ◽  
Keyan Zang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Cross Sections ◽  
Silicon Nanowires ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Semiconductor Device ◽  
Imprint Lithography ◽  
Wafer Level ◽  
Conventional Photolithography ◽  
Metal Assisted Chemical Etching

ABSTRACTA combinatory approach of Step-and-Flash Imprint Lithography (SFIL) and Metal-Assisted Chemical Etching (MacEtch) was used to generate near perfectly-ordered, high aspect ratio silicon nanowires (SiNWs) on 4" silicon wafers. The ordering and shapes of SiNWs depends only on the SFIL nanoimprinting mould used, thereby enabling arbitary SiNW patterns not possible with nanosphere and interference lithography (IL) to be generated. Very densely packed SiNWs with periodicity finer than that permitted by conventional photolithography can be produced. The height of SiNWs is, in turn, controlled by the etching duration. However, it was found that very high aspect ratio SiNWs tend to be bent during processing. Hexagonal arrays of SiNW with circular and hexagonal cross-sections of dimensions 200nm and less were produced using pillar and pore patterned SFIL moulds. In summary, this approach allows highlyordered SiNWs to be fabricated on a wafer-level basis suitable for semiconductor device manufacturing.

scholarly journals Metal-Assisted Chemical Etching for Anisotropic Deep Trenching of GaN Array

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3179
Author(s):  
Qi Wang ◽  
Kehong Zhou ◽  
Shuai Zhao ◽  
Wen Yang ◽  
Hongsheng Zhang ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Low Cost ◽  
Etching Rate ◽  
Surface Damage ◽  
Device Fabrication ◽  
Irreversible Damage ◽  
Catalytic Role ◽  
Metal Assisted Chemical Etching ◽  
Gan Etching

Realizing the anisotropic deep trenching of GaN without surface damage is essential for the fabrication of GaN-based devices. However, traditional dry etching technologies introduce irreversible damage to GaN and degrade the performance of the device. In this paper, we demonstrate a damage-free, rapid metal-assisted chemical etching (MacEtch) method and perform an anisotropic, deep trenching of a GaN array. Regular GaN microarrays are fabricated based on the proposed method, in which CuSO4 and HF are adopted as etchants while ultraviolet light and Ni/Ag mask are applied to catalyze the etching process of GaN, reaching an etching rate of 100 nm/min. We comprehensively explore the etching mechanism by adopting three different patterns, comparing a Ni/Ag mask with a SiN mask, and adjusting the etchant proportion. Under the catalytic role of Ni/Ag, the GaN etching rate nearby the metal mask is much faster than that of other parts, which contributes to the formation of deep trenches. Furthermore, an optimized etchant is studied to restrain the disorder accumulation of excessive Cu particles and guarantee a continuous etching result. Notably, our work presents a novel low-cost MacEtch method to achieve GaN deep etching at room temperature, which may promote the evolution of GaN-based device fabrication.

Nanoparticle Emissions From Metal-Assisted Chemical Etching of Silicon Nanowires for Lithium Ion Batteries

2019 ◽  
Vol 7 (1) ◽  
Author(s):  
Fenfen Wang ◽  
Xianfeng Gao ◽  
Lulu Ma ◽  
Chris Yuan
Keyword(s):  
Lithium Ion Batteries ◽  
Silicon Nanowires ◽  
Chemical Etching ◽  
Low Cost ◽  
High Capacity ◽  
Lithium Ion ◽  
High Mass ◽  
High Concentration ◽  
A Value ◽  
Metal Assisted Chemical Etching

As one of the most promising anode materials for high-capacity lithium ion batteries (LIBs), silicon nanowires (SiNWs) have been studied extensively. The metal-assisted chemical etching (MACE) is a low-cost and scalable method for SiNW synthesis. Nanoparticle emissions from the MACE process, however, are of grave concerns due to their hazardous effects on both occupational and public health. In this study, both airborne and aqueous nanoparticle emissions from the MACE process for SiNWs with three sizes of 90 nm, 120 nm, and 140 nm are experimentally investigated. The prepared SiNWs are used as anodes of LIB coin cells, and the experimental results reveal that the initial discharge and charge capacities of LIB electrodes are 3636 and 2721 mAh g−1 with 90 nm SiNWs, 3779 and 2712 mAh g−1 with 120 nm SiNWs, and 3611 and 2539 mAh g−1 with 140 nm SiNWs. It is found that for 1 kW h of LIB electrodes, the MACE process for 140 nm SiNWs produces a high concentration of airborne nanoparticle emissions of 2.48 × 109 particles/cm3; the process for 120 nm SiNWs produces a high mass concentration of aqueous particle emissions, with a value of 9.95 × 105 mg/L. The findings in this study can provide experimental data of nanoparticle emissions from the MACE process for SiNWs for LIB applications and can help the environmental impact assessment and life cycle assessment of the technology in the future.

Morphology control of ordered Si nanowire arrays by nanosphere lithography and metal-assisted chemical etching

2014 ◽  
Vol 53 (5S3) ◽  
pp. 05HA07 ◽  
Author(s):  
Tae-Yeon Hwang ◽  
Guk-Hwan An ◽  
Jae-Hong Lim ◽  
Nosang V. Myung ◽  
Yong-Ho Choa
Keyword(s):  
Chemical Etching ◽  
Nanosphere Lithography ◽  
Morphology Control ◽  
Nanowire Arrays ◽  
Si Nanowire ◽  
Metal Assisted Chemical Etching

A facile and low-cost route to high-aspect-ratio microstructures on silicon via a judicious combination of flow-enabled self-assembly and metal-assisted chemical etching

2016 ◽  
Vol 4 (38) ◽  
pp. 8953-8961 ◽  
Author(s):  
Liyi Li ◽  
Bo Li ◽  
Chuchu Zhang ◽  
Chia-Chi Tuan ◽  
Zhiqun Lin ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Self Assembly ◽  
Chemical Etching ◽  
Low Cost ◽  
Cost Strategy ◽  
Metal Assisted Chemical Etching ◽  
Low Cost Strategy

A viable and low-cost strategy for fabricating high-aspect-ratio microstructures on silicon (Si) based on a judicious combination of flow-enabled self-assembly (FESA) and metal-assisted chemical etching (MaCE) is reported.

Low Cost and High‐Aspect Ratio Micro/Nano Device Fabrication by Using Innovative Metal‐Assisted Chemical Etching Method

2019 ◽  
Vol 21 (8) ◽  
pp. 1900490 ◽  
Author(s):  
Nguyen Van Toan ◽  
Xiaoyue Wang ◽  
Naoki Inomata ◽  
Masaya Toda ◽  
Ioana Voiculescu ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Low Cost ◽  
Device Fabrication ◽  
Etching Method ◽  
Metal Assisted Chemical Etching
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