Oxygen sensor utilizing ultraviolet irradiation assisted ZnO nanorods under low operation temperature

RSC Advances ◽  
2014 ◽  
Vol 4 (95) ◽  
pp. 52903-52910 ◽  
Author(s):  
Chen-Shiun Chou ◽  
Yung-Chen Wu ◽  
Che-Hsin Lin
Keyword(s):  
Uv Irradiation ◽  
Ultraviolet Irradiation ◽  
High Performance ◽  
Oxygen Sensor ◽  
Oxygen Sensing ◽  
Zno Nanorods ◽  
Zno Film ◽  
Working Temperature ◽  
Operation Temperature

This paper presents a novel ultraviolet (UV) irradiation assisted nanostructured ZnO film for high performance oxygen sensing under a low working temperature.

Effect of Sn on sensing performance of nanostructured ZnO film

2015 ◽  
Vol 08 (03) ◽  
pp. 1540009 ◽  
Author(s):  
Yongqin Chang ◽  
Changjing Shao ◽  
Nan Jiang ◽  
Shiqi Wang ◽  
Bo Zou ◽  
...  
Keyword(s):  
High Performance ◽  
Weight Ratio ◽  
Chemical Vapor ◽  
Hexagonal Wurtzite Structure ◽  
Zno Films ◽  
Zno Film ◽  
Sn Doping ◽  
Working Temperature ◽  
Cvd Method ◽  
Sensing Applications

Nanostructured ZnO films were fabricated by chemical vapor deposition (CVD) method with different Sn source concentrations for ethanol and acetone sensing applications. The samples prepared with Sn:ZnO (weight ratio) of 0.1:1, 0.2:1 and 0.3:1 are named as S1, S2 and S3, respectively. It was found that hexagonal wurtzite structure of ZnO is maintained after Sn doping. The S1 sample shows the highest response to acetone, while the S2 sample shows the highest response to ethanol, which confines that the as-grown ZnO films with different Sn source concentrations exhibit obvious selectivity to ethanol and acetone. Working temperature can also be reduced by the increase of Sn source concentration. All the samples have very short average recovery time. Our work provides a prospective approach to obtain high performance gas sensor for ethanol and acetone.

scholarly journals Mesoscale organization of titania thin films enables oxygen sensing at room temperature

2017 ◽  
Vol 5 (45) ◽  
pp. 11815-11823 ◽  
Author(s):  
Pietro Rassu ◽  
Luca Malfatti ◽  
Davide Carboni ◽  
Maria F. Casula ◽  
Sebastiano Garroni ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Area ◽  
Uv Irradiation ◽  
Room Temperature ◽  
Oxygen Sensor ◽  
Oxygen Sensing ◽  
Mesoporous Titania ◽  
Mesoporous Film ◽  
Titania Films

We developed an oxygen sensor based on mesoporous titania films working at RT under UV irradiation. Due to larger surface area and number of defects, the mesoporous film exhibits a response higher than dense titania.

The Influence of Some Factors on Spirolactone Stability in Solution

2008 ◽  
Vol 59 (7) ◽  
Author(s):  
Daniela Lucia Muntean ◽  
Silvia Imre ◽  
Cosmina Voda
Keyword(s):  
High Performance Liquid Chromatography ◽  
Liquid Chromatography ◽  
Uv Irradiation ◽  
High Performance ◽  
Degradation Products ◽  
Simultaneous Action ◽  
Ethanolic Solution ◽  
Degradation Processes ◽  
Stable Solutions ◽  
Preformulation Study

The influence of some factors on spironolactone stability in solution was studied, by applying high-performance liquid chromatography, as a part of a pharmaceutical preformulation study in order to obtain a spironolactone solution for alopecia treatment. Solutions of 1 mg/ml spironolactone in aqueous ethanolic solution 1 : 1 and in 20 mM cyclodextrines solutions (b-, hydroxi-b- and methyl-b-cyclodextrine) was used, maintained at 8 and 22 �C, protected from light and after UV irradiation at 254 nm. The main degradation products were 7a-thiospirolactone and canrenone. The most stable solutions were the alcoholic ones and with methyl-beta-cyclodextrine, but the simultaneous action of temperature and UV irradiation allowed degradation processes after one hour of exposure, more aggressive in the presence of methyl-beta-cyclodextrine. In conclusion, for alopecia treatment with spironolactone a 1 mg/mL ethanolic solution could be used and it is recommendable the protection of treated zone.

Novel optical oxygen sensing by phosphorescence quenching of palladium porphyrin self-assembled film on alumina plate

2000 ◽  
Vol 04 (02) ◽  
pp. 179-184 ◽  
Author(s):  
YUTAKA AMAO ◽  
KEISUKE ASAI ◽  
ICHIRO OKURA
Keyword(s):  
Oxygen Pressure ◽  
Oxygen Sensor ◽  
Response Times ◽  
Oxygen Sensing ◽  
Fast Response ◽  
Phosphorescence Quenching ◽  
Highly Sensitive ◽  
Optical Oxygen Sensor ◽  
Self Assembled ◽  
Quenching By Oxygen

An optical oxygen sensor based on the phosphorescence quenching of palladium tetrakis(4-carboxyphenyl)porphyrin (PdTCPP) self-assembled film (SAM) on alumina plate was developed. The phosphorescence intensity of PdTCPP film decreased with increasing oxygen pressure, indicating that the film can be used as an optical oxygen-sensing device based on phosphorescence quenching by oxygen. The ratio I0/I100 as a sensitivity measure of the sensing film is estimated to be 17.7, showing that the film is a highly sensitive device for oxygen pressure. The film obeyed Stern–Volmer plots with a multisite model and possessed good operational stability and a fast response. Response times are 36 s for deoxygenated to oxygenated conditions and 148 s for the reverse conditions.

Constructing PbS quantum dot sensitized ZnO nanorod array photoelectrodes for highly efficient photovoltaic devices

2016 ◽  
Vol 94 (7) ◽  
pp. 687-692
Author(s):  
Masood Mehrabian ◽  
Naser Ghasemian
Keyword(s):  
Quantum Dot ◽  
Short Circuit ◽  
Zno Nanorods ◽  
Growth Period ◽  
Short Circuit Current ◽  
Nanorod Array ◽  
Open Circuit ◽  
Zno Film ◽  
Photovoltaic Properties ◽  
Pbs Quantum Dot

Solar cells with ZnO film/ZnO nanorods (NRs)/PbS quantum dot (QD) photoelectrodes were constructed and various properties were studied. The ZnO NRs were grown for different periods varying from 0 (ZnO film) to 30 min (ZnO NR30) and the effect of growth period on the photovoltaic properties was investigated. The cell with ZnO film/PbS QD as photoelectrode showed the open circuit voltage VOC of 0.59 V, short circuit current density JSC of 10.06 mAcm−2, and the power conversion efficiency of 3.29% under one sun illumination (air mass 1.5 global illumination at 100 mWcm−2). In a device containing of ZnO film/ZnO NR10/PbS QD (as photoelectrode), mentioned photovoltaic parameters increased to 0.61 V, 10.47 mAcm−2 and 3.81%, respectively.

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