Epitaxial growth of high-quality AlN films on metallic nickel substrates by pulsed laser deposition

RSC Advances ◽  
2014 ◽  
Vol 4 (52) ◽  
pp. 27399-27403 ◽  
Author(s):  
Wenliang Wang ◽  
Weijia Yang ◽  
Zuolian Liu ◽  
Yunhao Lin ◽  
Shizhong Zhou ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Smooth Surface ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Metallic Nickel ◽  
Epitaxial Relationship ◽  
High Quality ◽  
Nickel Substrates ◽  
Abrupt Interface ◽  
Relationship Of

Single-crystalline AlN films with smooth surface and abrupt interface have been grown on metallic nickel (Ni) substrates by pulsed laser deposition with an in-plane epitaxial relationship of AlN[112̄0]//Ni[11̄0].

Epitaxial Growth of AlN Thin Films on Silicon and Sapphire by Pulsed Laser Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
R.D. Vispute ◽  
H. Wu ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Breakdown Field ◽  
Transmission Electron ◽  
Uv Visible ◽  
Relationship Of

ABSTRACTAIN thin films have been grown epitaxially on Si(111) and Al2O3(0001) substrates by pulsed laser deposition. These films were characterized by FTIR and UV-Visible, x-ray diffraction, high resolution transmission electron and scanning electron microscopy, and electrical resistivity. The films deposited on silicon and sapphire at 750-800°C and laser energy density of ∼ 2 to 3J/cm2 are epitaxial with an orientational relationship of AIN[0001]║ Si[111], AIN[2 110]║Si[011] and AlN[0001]║Al2O3[0001], AIN[1 2 1 0]║ Al2O3[0110] and AIN[1010] ║ Al2O3[2110]. The both AIN/Si and AIN/Al2O3 interfaces were found to be quite sharp without any indication of interfacial reactions. The absorption edge measured by UV-Visible spectroscopy for the epitaxial AIN film grown on sapphire was sharp and the band gap was found to be 6.1eV. The electrical resistivity of the films was about 5-6×l013Ω-cm with a breakdown field of 5×106V/cm. We also found that the films deposited at higher laser energy densities ≥10J/cm2 and lower temperatures ≤650°C were nitrogen deficient and containing free metallic aluminum which degrade the microstructural, electrical and optical properties of the AIN films

Pulsed Laser Deposition of High-Quality Manganite Thin Films at Low Background Pressures with in-situ Reflection High Energy Electron Diffraction

2019 ◽  
Vol 3 (9) ◽  
pp. 55-63 ◽  
Author(s):  
Antonello Tebano ◽  
Carmela Aruta ◽  
Pier Gianni Medaglia ◽  
Giuseppe Balestrino ◽  
Norberto G. Boggio ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
High Energy Electron ◽  
High Quality ◽  
Low Background

scholarly journals Epitaxial growth and characterization of high quality Bi2O2Se thin films on SrTiO3 substrates by pulsed laser deposition

2020 ◽  
Vol 31 (16) ◽  
pp. 165704 ◽  
Author(s):  
Yekai Song ◽  
Zhuojun Li ◽  
Hui Li ◽  
Shujie Tang ◽  
Gang Mu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality

scholarly journals Pulsed laser deposition of single-layer MoS2 on Au(111): from nanosized crystals to large-area films

2019 ◽  
Vol 1 (2) ◽  
pp. 643-655 ◽  
Author(s):  
Francesco Tumino ◽  
Carlo S. Casari ◽  
Matteo Passoni ◽  
Valeria Russo ◽  
Andrea Li Bassi
Keyword(s):  
Pulsed Laser Deposition ◽  
2D Materials ◽  
Optoelectronic Devices ◽  
Pulsed Laser ◽  
Single Layer ◽  
Laser Deposition ◽  
Large Area ◽  
Molybdenum Disulphide ◽  
High Quality ◽  
Nanosized Crystals

Molybdenum disulphide (MoS2) is a promising material for heterogeneous catalysis and novel 2D optoelectronic devices. In this work, single-layer MoS2 is synthesized on Au(111) by pulsed laser deposition, showing the potentialities of this technique in the synthesis of high-quality 2D materials films.

High quality ZnS/Au/ZnS transparent conductive tri-layer films deposited by pulsed laser deposition

2016 ◽  
Vol 121 (1) ◽  
pp. 68-71 ◽  
Author(s):  
Caifeng Wang ◽  
Qingshan Li ◽  
Jisuo Wang ◽  
Lichun Zhang ◽  
Fengzhou Zhao ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality

Epitaxial Growth of TiN on GaAs(100) by Pulsed Laser Deposition

1992 ◽  
Vol 285 ◽  
Author(s):  
Tsvetanka S. Zheleva ◽  
K. Jagannadham ◽  
A. Kumar ◽  
J. Narayan
Keyword(s):  
High Resolution ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Film Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Epitaxial Relationship ◽  
Cross Sectional ◽  
Tin Films ◽  
High Resolution Tem

ABSTRACTEpitaxial growth of TiN films on GaAs(100) by pulsed laser deposition has been studied. Excimer KrF laser (λ=248 nm, τ=30 ns) has been used for deposition of TiN films in a chamber maintained at vacuum of ≤ 10−6 torr. The microstructure of TiN films has been characterized by x-ray diffraction and transmission electron microscopy (TEM). Cross-sectional high resolution TEM showed a smooth unreacted interface between the single crystalline TiN film and GaAs. The predominant epitaxial relationship was found to be [110]TiN//[010]GaAs, (220)TiN//(040)GaAs at a substrate temperature of 350°C. Modelling of epitaxial growth showed that the interfacial energy is an important term responsible for 45° rotation of the TiN unit cell with respect to that of GaAs. The high strain energy associated with the coherent epilayer is reduced by domain epitaxial growth. These films were characterized using high-resolution TEM techniques, and experimental results were rationalized by thin film growth modeling.

Microwave Phase Shifters: Epitaxial Growth by Pulsed Laser Deposition of Dielectric Ba0.5Sr0.5TiO3 Thin Films on MgO

2005 ◽  
Vol 902 ◽  
Author(s):  
YauYau Tse ◽  
P. S. Suherman ◽  
T. J. Jackson ◽  
I. P. Jones
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Strain Relaxation ◽  
Pulsed Laser ◽  
Phase Shifters ◽  
Laser Deposition ◽  
Ex Situ ◽  
Misfit Dislocations ◽  
Epitaxial Relationship

AbstractBa0.5Sr0.5TiO3 (BSTO) thin films were grown on (001) MgO using pulsed-laser deposition (PLD). The microstructures of in-situ and ex-situ annealed BSTO films were studied by X-ray diffraction and transmission electron microscopy (TEM). The films showed a cube on cube epitaxial relationship with <100> BSTO // <100> MgO. They were essentially single crystals with a columnar structure and possessed smooth surfaces. The interfaces of the BSTO films and substrates were atomically sharp, with misfit dislocations. Better crystallinity and full strain relaxation was obtained in films grown in 10-1 mbar oxygen and annealed ex-situ. A 30% increase in dielectric tuneability was achieved compared with in-situ annealing and deposition at 10-4 mbar. Threading dislocations are the dominant defects in the films grown in 10-1 mbar oxygen and annealed ex-situ, while the films with in-situ annealing show columnar structures with low angle boundaries.

Tem Characterization of ZnO and AIN/ZnO Thin Films Grown on Sapphire

1998 ◽  
Vol 526 ◽  
Author(s):  
K. Dovidenko ◽  
S. Oktyabrsky ◽  
A. K. Sharma ◽  
J. Narayan
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Basal Plane ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Threading Dislocation ◽  
Epitaxial Relationship ◽  
Spinel Layer ◽  
Plan View

AbstractThin (~ 250 nm) films of ZnO grown by pulsed laser deposition on basal plane of sapphire were studied by transmission electron microscopy (TEM). Plan-view TEM study proved the films to be single crystal with the following epitaxial relationship with the substrate: (0001)znO || (0001)sap with the 30 30° in-plane rotation - [0110]ZnO || [1210]sap. Dislocations lying mostly in basal plane of ZnO and aligned along both <:1010> and <1120> directions having b=1/3[1120] were found. ZnO films were found to have layered growth morphology contrary to columnar morphology of III-nitrides. Consequently, the threading dislocation density in ZnO films (opposing to the AIN and GaN) drops very fast with the thickness: down to 107cm-2 at ~ 250 nm. The effect of post-annealing (which caused significant improvement in electrical and optical properties) on the microstructure of ZnO films was also studied. Contrary to the atomically sharp and clean interface in the as-deposited films, the post-annealed ZnO/sapphire interface contained reacted layer of 30 - 60 A thickness. The structure of the interlayer was determined to be ZnAl2O4 (spinel). The formation of this single crystal spinel layer did not cause deterioration of the ZnO film structure or properties. We have also explored the possibilities of using ZnO as a buffer for III-nitride growth. The epitaxial AIN films were grown on top of the ZnO layer by pulsed laser deposition. Thin (20 -60 A) interfacial reaction layer (also spinel ZnAm2O4) was observed between AIN and ZnO. Formation of this interlayer is studied in conjunction with the AIN epitaxy and the characteristics of defects and interfaces.

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