Epitaxial Growth of TiN on GaAs(100) by Pulsed Laser Deposition

1992 ◽  
Vol 285 ◽  
Author(s):  
Tsvetanka S. Zheleva ◽  
K. Jagannadham ◽  
A. Kumar ◽  
J. Narayan
Keyword(s):  
High Resolution ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Film Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Epitaxial Relationship ◽  
Cross Sectional ◽  
Tin Films ◽  
High Resolution Tem

ABSTRACTEpitaxial growth of TiN films on GaAs(100) by pulsed laser deposition has been studied. Excimer KrF laser (λ=248 nm, τ=30 ns) has been used for deposition of TiN films in a chamber maintained at vacuum of ≤ 10−6 torr. The microstructure of TiN films has been characterized by x-ray diffraction and transmission electron microscopy (TEM). Cross-sectional high resolution TEM showed a smooth unreacted interface between the single crystalline TiN film and GaAs. The predominant epitaxial relationship was found to be [110]TiN//[010]GaAs, (220)TiN//(040)GaAs at a substrate temperature of 350°C. Modelling of epitaxial growth showed that the interfacial energy is an important term responsible for 45° rotation of the TiN unit cell with respect to that of GaAs. The high strain energy associated with the coherent epilayer is reduced by domain epitaxial growth. These films were characterized using high-resolution TEM techniques, and experimental results were rationalized by thin film growth modeling.

Epitaxial growth, dielectric response, and microstructure of compositionally graded (Ba,Sr)TiO3 thin films grown on (100) MgO substrates by pulsed laser deposition

2008 ◽  
Vol 23 (3) ◽  
pp. 737-744 ◽  
Author(s):  
Xinhua Zhu ◽  
Jianmin Zhu ◽  
Shunhua Zhou ◽  
Zhiguo Liu ◽  
Naiben Ming ◽  
...  
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Dielectric Response ◽  
Bottom Electrode ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Cross Sectional ◽  
High Resolution Tem ◽  
Interfacial Dislocations ◽  
Bst Films

Compositionally graded (Ba1−xSrx)TiO3 (BST) thin films (with 0.0 ⩽ x ⩽ 0.25) were grown by pulsed laser deposition on the (100)MgO single-crystal substrates covered with a conductive La0.5Sr0.5CoO3 (LSCO) layer as a bottom electrode. Their epitaxial growth, dielectric response, and microstructure were characterized. The epitaxial relationships between the BST, LSCO, and MgO can be determined as [001]BST//[001]LSCO//[001]MgO and (100)BST//(100)LSCO//(100)MgO, from the x-ray diffraction (rocking curve, ϕ scans) and electron-diffraction patterns. Dielectric data showed that the room temperature values of the dielectric constant and dielectric loss of the graded BST films were 630 and 0.017 at 100 kHz, respectively. Cross-sectional transmission electron microscopy (TEM) images reveal that both the BST films and the LSCO bottom electrode grow with a columnar structure, and they have flat interfaces and overall uniform thickness across the entire specimen. Cross-sectional high-resolution TEM images reveal that at the LSCO/MgO(100) interface, an interfacial reaction is not seen, whereas edge-type interfacial dislocations with their extra half-planes residing in the LSCO side are observed with an average interval of 2.20 nm, close to the theoretical value of 2.15 nm. At/near the LSCO/BST interface, the graded BST films grow perfectly and coherently on the LSCO lattice because they have the same type of crystal structure and almost same lattice constants, and no interfacial dislocations are observed. Planar TEM images show that the graded films exhibit granular and/or polyhedral morphologies with an average grain size of 50 nm, and the aligned rectangular-shaped voids were also observed. High-resolution TEM images show that the length sizes of voids vary from 8 to 15 nm, and with width of 5 to 10 nm along the 〈001〉 direction in the (100) plane.

Tracing the origin of oxygen for La0.6Sr0.4MnO3thin film growth by pulsed laser deposition

2015 ◽  
Vol 49 (4) ◽  
pp. 045201 ◽  
Author(s):  
J Chen ◽  
M Döbeli ◽  
D Stender ◽  
M M Lee ◽  
K Conder ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Laser Deposition

Microstructure of Compositionally Graded PZT films Grown by Pulsed Laser Deposition

2008 ◽  
Vol 14 (S3) ◽  
pp. 53-56
Author(s):  
S.A.S. Rodrigues ◽  
A. Khodorov ◽  
M. Pereira ◽  
M.J.M. Gomes
Keyword(s):  
Pulsed Laser Deposition ◽  
Lead Zirconate Titanate ◽  
Film Growth ◽  
Pulsed Laser ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Laser Deposition ◽  
Composition Gradient ◽  
Complex Structures ◽  
Pzt Films

Ferroelectric films with a composition gradient have attracted much attention because of their large polarization offset present in the hysteresis loops. Lead Zirconate Titanate (PZT) films were deposited on Pt/TiO2/SiO2/Si substrates by Pulsed Laser Deposition (PLD) technique, using a Nd:YAG laser (Surelite) with a source pulse wavelength of 1064 nm and duration of 5-7 ns delivering an energy of 320 mJ per pulse and a laser fluence energy about 20 J/cm2. The film growth is performed in O2 atmosphere (0,40 mbar) while the substrate is heated at 600°C by a quartz lamp. Starting from ceramic targets based on PZT compositions and containing 5% mol. of excess of PbO to compensate the lead evaporation during heat treatment, three films with different compositions Zr/Ti 55/45, 65/35 and 92/8, and two types of complex structures were produced. These complex structures are in the case of the up-graded structure (UpG), with PZT (92/8) at the bottom, PZT (65/35) on middle and PZT (55/45) on the top, and for down-graded (DoG) one, that order is reversed.

Epitaxial growth and ferroelectric properties of SrBi2Nb2O9(115) thin films grown by pulsed-laser deposition on epitaxial Pt(111) electrode

2003 ◽  
Vol 83 (26) ◽  
pp. 5500-5502 ◽  
Author(s):  
J.-R. Duclère ◽  
M. Guilloux-Viry ◽  
V. Bouquet ◽  
A. Perrin ◽  
E. Cattan ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition

ZnSe and ZnO film growth by pulsed-laser deposition

1998 ◽  
Vol 127-129 ◽  
pp. 496-499 ◽  
Author(s):  
Y.R. Ryu ◽  
S. Zhu ◽  
S.W. Han ◽  
H.W. White ◽  
P.F. Miceli ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Film

Epitaxial growth of Ba1−xKxBiO3thin films by pulsed‐laser deposition

1993 ◽  
Vol 62 (4) ◽  
pp. 414-416 ◽  
Author(s):  
D. P. Norton ◽  
J. D. Budai ◽  
B. C. Chakoumakos ◽  
R. Feenstra
Keyword(s):  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition

Epitaxial growth of Al-doped ZnO thin films grown by pulsed laser deposition

2002 ◽  
Vol 420-421 ◽  
pp. 107-111 ◽  
Author(s):  
H Kim ◽  
J.S Horwitz ◽  
S.B Qadri ◽  
D.B Chrisey
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Doped Zno

Epitaxial growth of optical Ba2NaNb5O15waveguide film by pulsed laser deposition

1994 ◽  
Vol 65 (16) ◽  
pp. 1995-1997 ◽  
Author(s):  
J. M. Liu ◽  
F. Zhang ◽  
Z. G. Liu ◽  
S. N. Zhu ◽  
L. J. Shi ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition

Luminescent Characteristics of Pulsed Laser Deposited Epitaxial Eu-Doped Y2O3 Films

1999 ◽  
Vol 574 ◽  
Author(s):  
D. Kumar ◽  
K. G. Cho ◽  
Zhang Chen ◽  
V. Craciun ◽  
P. H. Holloway ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Yttrium Oxide ◽  
Lattice Mismatch ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Deposition Parameters

AbstractThe growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (Eu:Y2O3) thin films are reported. The Eu:Y2O3 films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O3 films can grow epitaxially on (100) LaAlO3 substrates under optimized deposition parameters. The epitaxial growth of Eu:Y2O3 films on LaAlO3, which has a lattice mismatch of ∼ 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2O3 films with an intense CL emission at 611 nm.

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