Electronic transport behaviours of lead chalcogenide (PbE)n (E = S and Se) nanocluster junctions by ab initio simulation

RSC Advances ◽  
2014 ◽  
Vol 4 (27) ◽  
pp. 14221-14226 ◽  
Author(s):  
Rong Li ◽  
Jianbing Zhang ◽  
Yuanlan Xu ◽  
Xiangshui Miao ◽  
Daoli Zhang
Keyword(s):  
Ab Initio ◽  
Electronic Transport ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Molecular Junctions ◽  
Lead Chalcogenide ◽  
Metallic Behavior ◽  
Ab Initio Simulation ◽  
High Bias ◽  
Bias Range

All investigated (PbS)n and (PbSe)n nanocluster-based molecular junctions show metallic behavior at low biases (−2 V, 2 V) while negative differential resistance (NDR) appears at a certain high bias range.

Effects of different tailoring graphene electrodes on the rectification and negative differential resistance of molecular devices

2018 ◽  
Vol 32 (29) ◽  
pp. 1850323
Author(s):  
Ting Ting Zhang ◽  
Cai Juan Xia ◽  
Bo Qun Zhang ◽  
Xiao Feng Lu ◽  
Yang Liu ◽  
...  
Keyword(s):  
Electronic Transport ◽  
Negative Differential Resistance ◽  
Density Functional ◽  
Graphene Nanoribbons ◽  
Differential Resistance ◽  
Voltage Characteristic ◽  
Molecular Devices ◽  
Current Voltage Characteristic ◽  
Functional Theory ◽  
Current Voltage

The electronic transport properties of oligo p-phenylenevinylene (OPV) molecule sandwiched with symmetrical or asymmetric tailoring graphene nanoribbons (GNRs) electrodes are investigated by nonequilibrium Green’s function in combination with density functional theory. The results show that different tailored GNRs electrodes can modulate the current–voltage characteristic of molecular devices. The rectifying behavior can be observed with respect to electrodes, and the maximum rectification ratio can reach to 14.2 in the asymmetric AC–ZZ GNRs and ZZ–AC–ZZ GNRs electrodes system. In addition, the obvious negative differential resistance can be observed in the symmetrical AC-ZZ GNRs system.

Measurements of contact specific low-bias negative differential resistance of single metalorganic molecular junctions

Nanoscale ◽  
2013 ◽  
Vol 5 (13) ◽  
pp. 5715 ◽  
Author(s):  
Jianfeng Zhou ◽  
Satyabrata Samanta ◽  
Cunlan Guo ◽  
Jason Locklin ◽  
Bingqian Xu
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Molecular Junctions

Room-temperature negative differential resistance in nanoscale molecular junctions

2000 ◽  
Vol 77 (8) ◽  
pp. 1224-1226 ◽  
Author(s):  
J. Chen ◽  
W. Wang ◽  
M. A. Reed ◽  
A. M. Rawlett ◽  
D. W. Price ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Room Temperature ◽  
Differential Resistance ◽  
Molecular Junctions

THE INFLUENCE OF THE COUPLING STRENGTH ON THE ELECTRON TRANSPORT THROUGH THE BENZENE-1,4-DITHIOLATE MOLECULAR JUNCTION

2013 ◽  
Vol 27 (16) ◽  
pp. 1350121 ◽  
Author(s):  
YUNJIN YU ◽  
YAOYU LI ◽  
LANGHUI WAN ◽  
BIN WANG ◽  
YADONG WEI
Keyword(s):  
Electron Transport ◽  
Electronic Transport ◽  
Coupling Strength ◽  
First Principles ◽  
Negative Differential Resistance ◽  
Resonant State ◽  
Differential Resistance ◽  
Stable Configuration ◽  
Molecular Junction ◽  
Aluminum Metal

The electronic transport properties of one benzene-1,4-dithiolate molecule coupled by two aluminum metal leads were investigated by using first-principles method. The influence of the coupling distance between the molecule and the electrodes on I–V curve was studied thoroughly. Our calculations showed that when the system is in the most stable configuration, where the system total energy is the lowest, and the electron transport is in off-resonant state. Starting from the most stable configuration, when we gradually increase the distance between the molecule and electrodes and so decreasing the coupling strength of the molecule and electrodes, the conductance, as well as the I–V curve, does not decrease immediately but increase quickly at first. Only when we separate the molecule and electrodes far enough, the current begins to drop quickly. The total scattering charge density was presented in order to understand this phenomenon. A one-level quantum dot model is used to explain it. Finally, negative differential resistance was observed and analyzed.

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