scholarly journals Real space probe of short-range interaction between Cr in a ferromagnetic semiconductor ZnCrTe

Nanoscale ◽  
2014 ◽  
Vol 6 (24) ◽  
pp. 14667-14673 ◽  
Author(s):  
Ken Kanazawa ◽  
Taku Nishimura ◽  
Shoji Yoshida ◽  
Hidemi Shigekawa ◽  
Shinji Kuroda
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Short Range ◽  
Magnetic Interaction ◽  
Real Space ◽  
Ferromagnetic Semiconductor ◽  
Scanning Tunneling ◽  
Space Probe ◽  
Short Range Interaction ◽  
Tunneling Microscopy ◽  
Range Interaction

We have revealed the short-range character of the magnetic interaction between Cr atoms in (Zn,Cr)Te by scanning tunneling microscopy.

Real Space Observation of Double-Helix DNA Structure Using a Low Temperature Scanning Tunneling Microscopy

1999 ◽  
Vol 38 (Part 2, No. 6A/B) ◽  
pp. L606-L607 ◽  
Author(s):  
Takashi Kanno ◽  
Hiroyuki Tanaka ◽  
Tomohiko Nakamura ◽  
Hitoshi Tabata ◽  
Tomoji Kawai
Keyword(s):  
Low Temperature ◽  
Scanning Tunneling Microscopy ◽  
Double Helix ◽  
Dna Structure ◽  
Real Space ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Temperature Scanning

Surface Reconstructions of Strained Epitaxial CoSi2/Si(100) Layers Studied by Scanning Tunneling Microscopy.

1991 ◽  
Vol 237 ◽  
Author(s):  
R. Stalder ◽  
C. Schwarz ◽  
H. Sirringhaus ◽  
H. VON Känel
Keyword(s):  
Electron Diffraction ◽  
Scanning Tunneling Microscopy ◽  
High Energy ◽  
Real Space ◽  
Scanning Tunneling ◽  
High Energy Electron ◽  
Tunneling Microscopy ◽  
Detailed Surface ◽  
Surface Reconstructions

ABSTRACTEpitaxial single-domain CoSi2(100) layers were grown on Si(100) by use of a template technique. In-situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction (RHEED) were used for a detailed surface study. The (√2×√2)R45 reconstruction of the Co-rich “C-surface” and the (3√2×√2)R45 as well as a newly discovered (√2×√2)R45 of the Si-rich “S-surface” were resolved in real space and are discussed in detail. The transition from the C- to the S-surface above 500 °C is related to a (2×2) reconstruction.

Real-space imaging ofCaxC60using scanning tunneling microscopy

1992 ◽  
Vol 46 (19) ◽  
pp. 12914-12917 ◽  
Author(s):  
Y. Z. Li ◽  
J. C. Patrin ◽  
M. Chander ◽  
J. H. Weaver ◽  
L. P. F. Chibante ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Real Space ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Scanning tunneling microscopy reveals LiMnAs is a room temperature anti-ferromagnetic semiconductor

2012 ◽  
Vol 100 (11) ◽  
pp. 112107 ◽  
Author(s):  
A. P. Wijnheijmer ◽  
X. Martí ◽  
V. Holý ◽  
M. Cukr ◽  
V. Novák ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Room Temperature ◽  
Ferromagnetic Semiconductor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Probing nucleation and growth phenomena on silicon surfaces by scanning tunneling microscopy/spectroscopy

1989 ◽  
Vol 47 ◽  
pp. 28-29
Author(s):  
R.J. Hamers ◽  
U.K. Kohler ◽  
K. Markert ◽  
J.E. Demuth
Keyword(s):  
Electronic Structure ◽  
Scanning Tunneling Microscopy ◽  
Chemical Reactivity ◽  
Real Space ◽  
Nucleation And Growth ◽  
Silicon Surfaces ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Surface Geometry ◽  
Local Electronic Structure

Nucleation and growth processes have long been studied using diffraction technique On semiconductor surfaces, localized defects strongly affect both the electron properties of the surfaces as well as their reactivity, therby affecting nucleat and growth. In order to identify the role of local electronic structure, and surface irregularities such as steps and defects, a real-space probe of electronic structure is needed. Scanning tunneling microscopy is capable of probing both the local surface geometry and local electronic structure, permitting adsorption and chemical reactivity to be studied on an atom-by-atom basis.

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