Novel chemical route for atomic layer deposition of MoS2 thin film on SiO2/Si substrate

Nanoscale ◽  
2014 ◽  
Vol 6 (23) ◽  
pp. 14453-14458 ◽  
Author(s):  
Zhenyu Jin ◽  
Seokhee Shin ◽  
Do Hyun Kwon ◽  
Seung-Joo Han ◽  
Yo-Sep Min

An amorphous MoS2 thin film is grown at 100 °C on SiO2/Si by atomic layer deposition using molybdenum hexacarbonyl and dimethyldisulfide. The as-grown film is crystallized with (002) basal planes in a direction parallel to the substrate.

2005 ◽  
Vol 22 (9) ◽  
pp. 2418-2421 ◽  
Author(s):  
Xu Min ◽  
Lu Hong-Liang ◽  
Ding Shi-Jin ◽  
Sun Liang ◽  
Zhang Wei ◽  
...  

2017 ◽  
Vol 38 (7) ◽  
pp. 696-699 ◽  
Author(s):  
Dong-Hyun Ko ◽  
Sungjoon Kim ◽  
Zhenyu Jin ◽  
Seokhee Shin ◽  
Sun Young Lee ◽  
...  

Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...


2013 ◽  
Vol 542 ◽  
pp. 219-224 ◽  
Author(s):  
Väino Sammelselg ◽  
Ivan Netšipailo ◽  
Aleks Aidla ◽  
Aivar Tarre ◽  
Lauri Aarik ◽  
...  

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