Novel chemical route for atomic layer deposition of MoS2 thin film on SiO2/Si substrate
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An amorphous MoS2 thin film is grown at 100 °C on SiO2/Si by atomic layer deposition using molybdenum hexacarbonyl and dimethyldisulfide. The as-grown film is crystallized with (002) basal planes in a direction parallel to the substrate.
2005 ◽
Vol 22
(9)
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pp. 2418-2421
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2017 ◽
Vol 38
(7)
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pp. 696-699
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2008 ◽
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2016 ◽
Vol 157
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pp. 757-764
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