scholarly journals Graphene nanoribbon blends with P3HT for organic electronics

Nanoscale ◽  
2014 ◽  
Vol 6 (12) ◽  
pp. 6301-6314 ◽  
Author(s):  
Mirella El Gemayel ◽  
Akimitsu Narita ◽  
Lukas F. Dössel ◽  
Ravi S. Sundaram ◽  
Adam Kiersnowski ◽  
...  
Keyword(s):  
Organic Electronics ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Graphene Nanoribbons ◽  
Graphene Nanoribbon ◽  
Solution Processed ◽  
Regioregular Poly ◽  
Effect Transistor

Solution processed 18 arm-chair graphene nanoribbons embedded in a matrix of regioregular poly(3-hexylthiophene) show improved photoconductivity and field-effect transistor performance.

Solution-processed flexible nonvolatile organic field-effect transistor memory using polymer electret

2021 ◽  
Vol 99 ◽  
pp. 106331
Author(s):  
Jaeyong Kim ◽  
Dongil Ho ◽  
In Soo Kim ◽  
Myung-Gil Kim ◽  
Kang-Jun Baeg ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Solution Processed ◽  
Effect Transistor

Fully transparent conformal organic thin-film transistor array and its application as LED front driving

Nanoscale ◽  
2018 ◽  
Vol 10 (8) ◽  
pp. 3613-3620 ◽  
Author(s):  
Nan Cui ◽  
Hang Ren ◽  
Qingxin Tang ◽  
Xiaoli Zhao ◽  
Yanhong Tong ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Solution Processed ◽  
Grid Electrode ◽  
Metal Grid ◽  
Effect Transistor

A fully transparent conformal organic thin-film field-effect transistor array is obtained based on an ultrathin embedded metal-grid electrode and a solution-processed C8-BTBT film.

scholarly journals Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design

2020 ◽  
Vol 2020 ◽  
pp. 1-7
Author(s):  
Mathan Natarajamoorthy ◽  
Jayashri Subbiah ◽  
Nurul Ezaila Alias ◽  
Michael Loong Peng Tan
Keyword(s):  
Power Consumption ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Graphene Nanoribbon ◽  
Static Noise Margin ◽  
Noise Margin ◽  
Average Power Consumption ◽  
Sram Design ◽  
Effect Transistor ◽  
Static Noise

The development of the nanoelectronics semiconductor devices leads to the shrinking of transistors channel into nanometer dimension. However, there are obstacles that appear with downscaling of the transistors primarily various short-channel effects. Graphene nanoribbon field-effect transistor (GNRFET) is an emerging technology that can potentially solve the issues of the conventional planar MOSFET imposed by quantum mechanical (QM) effects. GNRFET can also be used as static random-access memory (SRAM) circuit design due to its remarkable electronic properties. For high-speed operation, SRAM cells are more reliable and faster to be effectively utilized as memory cache. The transistor sizing constraint affects conventional 6T SRAM in a trade-off in access and write stability. This paper investigates on the stability performance in retention, access, and write mode of 15 nm GNRFET-based 6T and 8T SRAM cells with that of 16 nm FinFET and 16 nm MOSFET. The design and simulation of the SRAM model are simulated in synopsys HSPICE. GNRFET, FinFET, and MOSFET 8T SRAM cells give better performance in static noise margin (SNM) and power consumption than 6T SRAM cells. The simulation results reveal that the GNRFET, FinFET, and MOSFET-based 8T SRAM cells improved access static noise margin considerably by 58.1%, 28%, and 20.5%, respectively, as well as average power consumption significantly by 97.27%, 99.05%, and 83.3%, respectively, to the GNRFET, FinFET, and MOSFET-based 6T SRAM design.

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