scholarly journals Effect of Edge Roughness on Static Characteristics of Graphene Nanoribbon Field Effect Transistor

Electronics ◽  
2016 ◽  
Vol 5 (4) ◽  
pp. 11 ◽  
Author(s):  
Yaser Banadaki ◽  
Ashok Srivastava
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Graphene Nanoribbon ◽  
Static Characteristics ◽  
Edge Roughness ◽  
Effect Transistor

scholarly journals Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design

2020 ◽  
Vol 2020 ◽  
pp. 1-7
Author(s):  
Mathan Natarajamoorthy ◽  
Jayashri Subbiah ◽  
Nurul Ezaila Alias ◽  
Michael Loong Peng Tan
Keyword(s):  
Power Consumption ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Graphene Nanoribbon ◽  
Static Noise Margin ◽  
Noise Margin ◽  
Average Power Consumption ◽  
Sram Design ◽  
Effect Transistor ◽  
Static Noise

The development of the nanoelectronics semiconductor devices leads to the shrinking of transistors channel into nanometer dimension. However, there are obstacles that appear with downscaling of the transistors primarily various short-channel effects. Graphene nanoribbon field-effect transistor (GNRFET) is an emerging technology that can potentially solve the issues of the conventional planar MOSFET imposed by quantum mechanical (QM) effects. GNRFET can also be used as static random-access memory (SRAM) circuit design due to its remarkable electronic properties. For high-speed operation, SRAM cells are more reliable and faster to be effectively utilized as memory cache. The transistor sizing constraint affects conventional 6T SRAM in a trade-off in access and write stability. This paper investigates on the stability performance in retention, access, and write mode of 15 nm GNRFET-based 6T and 8T SRAM cells with that of 16 nm FinFET and 16 nm MOSFET. The design and simulation of the SRAM model are simulated in synopsys HSPICE. GNRFET, FinFET, and MOSFET 8T SRAM cells give better performance in static noise margin (SNM) and power consumption than 6T SRAM cells. The simulation results reveal that the GNRFET, FinFET, and MOSFET-based 8T SRAM cells improved access static noise margin considerably by 58.1%, 28%, and 20.5%, respectively, as well as average power consumption significantly by 97.27%, 99.05%, and 83.3%, respectively, to the GNRFET, FinFET, and MOSFET-based 6T SRAM design.

Influence of Device Parameters on Performance of Ultra-Scaled Graphene Nanoribbon Field Effect Transistor

2020 ◽  
Vol 9 (12) ◽  
pp. 121006
Author(s):  
Md. Azizul Hasan ◽  
Sadiq Shahriyar Nishat ◽  
Mainul Hossain ◽  
Sharnali Islam
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Graphene Nanoribbon ◽  
Effect Transistor
Sign in / Sign up

Export Citation Format

Share Document