A simple solution-phase approach to synthesize high quality ternary AgInSe2 and band gap tunable quaternary AgIn(S1−xSex)2 nanocrystals

Nanoscale ◽  
2014 ◽  
Vol 6 (12) ◽  
pp. 6782 ◽  
Author(s):  
Tianyu Bai ◽  
Chunguang Li ◽  
Feifei Li ◽  
Lan Zhao ◽  
Zhaorui Wang ◽  
...  
Keyword(s):  
Band Gap ◽  
Solution Phase ◽  
Simple Solution ◽  
High Quality ◽  
Phase Approach

Nanorods of Tellurium: Synthesis and Self-Assembly

2006 ◽  
Vol 6 (3) ◽  
pp. 719-725 ◽  
Author(s):  
Sudip K. Batabyal ◽  
C. Basu ◽  
A. R. Das ◽  
G. S. Sanyal
Keyword(s):  
Hydrogen Peroxide ◽  
Self Assembly ◽  
Solution Phase ◽  
Simple Solution ◽  
Experimental Conditions ◽  
Oxidizing Agents ◽  
Phase Approach ◽  
Size And Shape

A simple solution phase approach is described to prepare tellurium nanorods which undergo morphological modifications to yield different microstructures under varied experimental conditions. The morphology of the prepared products is drastically altered in presence of a few oxidizing agents such as sodium oxychloride (NaOCl), hydrogen peroxide (H2O2) etc. The effects of poly (sodium 4-styrene sulphonate) (PSS) and Isooctyl phenoxy poly oxyethanol (TritonX-100) on the size and shape of the products in presence of air/NaOCl have also been monitored.

Controlling Synthesis of Copper Nanorods and Triangular Nanoplates

2009 ◽  
Vol 4 ◽  
pp. 145-152 ◽  
Author(s):  
Xiu Wen Zheng
Keyword(s):  
Aqueous Solution ◽  
Ascorbic Acid ◽  
Solution Phase ◽  
Simple Solution ◽  
Anisotropic Growth ◽  
One Dimensional ◽  
Phase Approach ◽  
Self Assembled ◽  
Copper Nanorods

Copper nanorods and triangular nanoplates have been successfully generated by via a simple solution-phase approach by reducing CuCl2 with L-ascorbic acid (AsA) in aqueous solution in the presence of cetyltgrimethlammonium bromide (CTAB). The formation of self-assembled microstructures of CTAB molecules in aqueous solution is suggested to account for the anisotropic growth of one-dimensional copper nanorods and triangular nanoplates.

Synthesis and piezoelectric properties of well-aligned ZnO nanowire arrays via a simple solution-phase approach

2009 ◽  
Vol 97 (4) ◽  
pp. 869-876 ◽  
Author(s):  
J. Zhang ◽  
M. K. Li ◽  
L. Y. Yu ◽  
L. L. Liu ◽  
H. Zhang ◽  
...  
Keyword(s):  
Piezoelectric Properties ◽  
Nanowire Arrays ◽  
Solution Phase ◽  
Simple Solution ◽  
Zno Nanowire ◽  
Phase Approach ◽  
Zno Nanowire Arrays

Simple Solution-Phase Synthesis of Soluble CdS and CdSe Nanorods

2000 ◽  
Vol 12 (6) ◽  
pp. 1516-1518 ◽  
Author(s):  
Chia-Chun Chen ◽  
Chi-Yau Chao ◽  
Zon-Huan Lang
Keyword(s):  
Solution Phase ◽  
Simple Solution ◽  
Phase Synthesis ◽  
Solution Phase Synthesis ◽  
Cdse Nanorods

Solution-Phase Hybrid Passivation for Efficient Infrared-Band Gap Quantum Dot Solar Cells

2020 ◽  
Vol 12 (44) ◽  
pp. 49840-49848
Author(s):  
Chandan Mahajan ◽  
Ashish Sharma ◽  
Arup K. Rath
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Band Gap ◽  
Solution Phase ◽  
Infrared Band ◽  
Quantum Dot Solar Cells

scholarly journals Cost‐conscious high‐quality care and guideline development education: a strange contradiction or simple solution?

2019 ◽  
Vol 26 (4) ◽  
pp. e48-e49
Author(s):  
H. J. M. Majoie ◽  
J. Gaalen ◽  
D. M. L. Verstegen ◽  
G. A. P. G. Mastrigt ◽  
J. Kleijnen ◽  
...  
Keyword(s):  
Guideline Development ◽  
Quality Care ◽  
Simple Solution ◽  
Development Education ◽  
High Quality ◽  
High Quality Care

Selective synthesis of Ni3S4 nanocrystallites with hollow structures through a solution-phase approach

2006 ◽  
Vol 60 (29-30) ◽  
pp. 3631-3634 ◽  
Author(s):  
Changhua An ◽  
Zhongjie Zhang ◽  
Xiangying Chen ◽  
Yunqi Liu
Keyword(s):  
Solution Phase ◽  
Selective Synthesis ◽  
Phase Approach ◽  
Hollow Structures

Novel Microwave-Assisted Solution-Phase Approach to Radial Arrays Composed of Prismatic Antimony Trisulfide Whiskers

Langmuir ◽  
2003 ◽  
Vol 19 (26) ◽  
pp. 10993-10996 ◽  
Author(s):  
Hui Wang ◽  
Jian-Min Zhu ◽  
Jun-Jie Zhu ◽  
Li-Min Yuan ◽  
Hong-Yuan Chen
Keyword(s):  
Solution Phase ◽  
Phase Approach ◽  
Microwave Assisted

scholarly journals GaN Based p-n Structures Grown on SiC Substrates

1996 ◽  
Vol 1 ◽  
Author(s):  
V.A. Dmitriev
Keyword(s):  
Band Gap ◽  
Bright Light ◽  
Wide Band ◽  
Injection Laser ◽  
Light Emitters ◽  
Wide Band Gap ◽  
High Quality ◽  
P Type

Wide band gap nitrides(InN, GaN, AlN) have been considered promising optoelectronics materials for many years [1]. Recently two main technological problems in the nitrides were overcome: (1)high quality layers has been grown on both sapphire and SiC substrates and(2) p-type GaN and AlGaN material has been obtained. These achievements resulted in the fabrication of bright light emitters in the violet, blue and green spectral regions [2].First injection laser has been demonstrated [3]. This paper reviews results obtained over the last few years on nitride p-n junctions, particularly on GaN based p-n junctions grown on SiC substrates. We will consider GaN p-n junctions, AlGaN p-n junctions, GaN and AlGaN p-i-n structures, and, finally, GaN/SiC p-n structures.

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