Asymmetrically-gated graphene self-switching diodes as negative differential resistance devices

Nanoscale ◽  
2014 ◽  
Vol 6 (13) ◽  
pp. 7628-7634 ◽  
Author(s):  
Feras Al-Dirini ◽  
Faruque M. Hossain ◽  
Ampalavanapillai Nirmalathas ◽  
Efstratios Skafidas
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Conduction Current ◽  
Quantum Tunnelling ◽  
Tunnelling Current

In an asymmetrically-gated graphene self-switching diode the quantum tunnelling current is used to control a much larger channel conduction current, resulting in a very pronounced NDR effect.

Compositional Tuning of Negative Differential Resistance in Bulk Silver Iodide Memristor

2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal
Keyword(s):  
Power Consumption ◽  
Negative Differential Resistance ◽  
Silver Iodide ◽  
Differential Resistance ◽  
Fast Response ◽  
Low Power Consumption ◽  
Switching Effect ◽  
Memory Switching ◽  
Bulk Silver ◽  
Emerging Memory

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...

Experimental Studies of New GaAs Metal/Insulator/p-n+Switches Using Low Temperature Oxide

2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Doping Concentration ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Switching Behavior ◽  
Metal Insulator ◽  
Turn On ◽  
Temperature Oxide ◽  
Phase Chemical

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.

scholarly journals Atomic chain of carbon atoms: Smallest negative differential resistance device

2021 ◽  
Vol 1797 (1) ◽  
pp. 012047
Author(s):  
Rinki Bhowmick ◽  
Mausumi Chattopadhyaya ◽  
Jit Chakraborty ◽  
Swarnendu Maity ◽  
Arnab Basu ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Atomic Chain

Current‐controlled negative differential resistance in four‐terminal heterostructure devices

1989 ◽  
Vol 54 (24) ◽  
pp. 2452-2454 ◽  
Author(s):  
A. Kastalsky ◽  
M. Milshtein ◽  
L. G. Shantharama ◽  
J. Harbison ◽  
L. Florez
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Heterostructure Devices
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