Structural development of gold and silver nanoparticles within hexagonally ordered spherical micellar diblock copolymer thin films

Nanoscale ◽  
2014 ◽  
Vol 6 (11) ◽  
pp. 5999-6008 ◽  
Author(s):  
Chia-Min Chen ◽  
Yi-Jiun Huang ◽  
Kung-Hwa Wei
Keyword(s):  
Diblock Copolymer ◽  
Grazing Incidence ◽  
Spatial Arrangement ◽  
Real Space ◽  
Structural Development ◽  
Gold And Silver Nanoparticles ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Silver Nps ◽  
Hexagonally Ordered

We characterized the critical spatial arrangement of gold and silver NPs in the two blocks of the nanostructured diblock copolymer using reciprocal-space synchrotron grazing incidence small-angle X-ray scattering as well as atomic force microscopy and transmission electron microscopy in the real space.

Characterization of Ultra-Thin PtSi Films for Infrared Detectors

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Bender ◽  
P. Roussel ◽  
S. Kolodinski ◽  
A. Torres ◽  
R. A. Donaton ◽  
...  
Keyword(s):  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Rapid Thermal Annealing Process ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Thermal Annealing Process ◽  
Deposition Techniques

AbstractTransmission electron microscopy and grazing incidence X-ray diffraction are used for the structural characterization of ultra-thin PtSi layers on (100) silicon prepared by a two-step rapid thermal annealing process. The roughness of the layers is investigated with atomic force microscopy. Two deposition techniques for the initial Pt layer are compared.

Small-Angle Neutron Scattering from Anisotropic Single-Crystalline Materials

1997 ◽  
Vol 30 (5) ◽  
pp. 575-579 ◽  
Author(s):  
A. D. Sequeira ◽  
G. Kostorz ◽  
J. S. Pedersen
Keyword(s):  
Small Angle ◽  
Three Dimensional ◽  
Spatial Arrangement ◽  
Real Space ◽  
Azimuthal Dependence ◽  
Single Crystalline ◽  
Crystalline Materials ◽  
Transmission Electron ◽  
Angle Scattering ◽  
Precipitation Phenomena

`Isotropic' small-angle scattering (SAS), i.e. without azimuthal dependence around the primary beam, occurs only for specific configurations of the scattering objects if single-crystalline material is studied. For decomposing Ni-based alloy single crystals, SAS signals are generally highly anisotropic. From analysis of two-dimensional SAS patterns, important information on the evolution of the morphology and on the three-dimensional spatial arrangement of the precipitates from the early stages of decomposition can be extracted. The real-space information obtained from transmission electron microscopy is an excellent complement to the reciprocal-space information extracted from SAS data. The complementary use of these two techniques offers a valuable approach to the study of precipitation phenomena.

convergent-beam diffraction from surfaces

1987 ◽  
Vol 45 ◽  
pp. 30-33
Author(s):  
J. A. Eades ◽  
A. E. Smith ◽  
D. F. Lynch
Keyword(s):  
Reciprocal Lattice ◽  
Three Dimensional ◽  
Grazing Incidence ◽  
Three Dimensions ◽  
Plane Figure ◽  
Transmission Electron ◽  
Convergent Beam ◽  
Beam Patterns ◽  
Beam Diffraction

It is quite simple (in the transmission electron microscope) to obtain convergent-beam patterns from the surface of a bulk crystal. The beam is focussed onto the surface at near grazing incidence (figure 1) and if the surface is flat the appropriate pattern is obtained in the diffraction plane (figure 2). Such patterns are potentially valuable for the characterization of surfaces just as normal convergent-beam patterns are valuable for the characterization of crystals.There are, however, several important ways in which reflection diffraction from surfaces differs from the more familiar electron diffraction in transmission.GeometryIn reflection diffraction, because of the surface, it is not possible to describe the specimen as periodic in three dimensions, nor is it possible to associate diffraction with a conventional three-dimensional reciprocal lattice.

Scanning tunneling microscopy and atomic force microscopy: New tools for biology

1989 ◽  
Vol 47 ◽  
pp. 778-779
Author(s):  
CE Bracker ◽  
P. K. Hansma
Keyword(s):  
Physical Property ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Small Scale ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
New Family ◽  
Small Probe ◽  
Atomic Force ◽  
Transmission Electron

A new family of scanning probe microscopes has emerged that is opening new horizons for investigating the fine structure of matter. The earliest and best known of these instruments is the scanning tunneling microscope (STM). First published in 1982, the STM earned the 1986 Nobel Prize in Physics for two of its inventors, G. Binnig and H. Rohrer. They shared the prize with E. Ruska for his work that had led to the development of the transmission electron microscope half a century earlier. It seems appropriate that the award embodied this particular blend of the old and the new because it demonstrated to the world a long overdue respect for the enormous contributions electron microscopy has made to the understanding of matter, and at the same time it signalled the dawn of a new age in microscopy. What we are seeing is a revolution in microscopy and a redefinition of the concept of a microscope.Several kinds of scanning probe microscopes now exist, and the number is increasing. What they share in common is a small probe that is scanned over the surface of a specimen and measures a physical property on a very small scale, at or near the surface. Scanning probes can measure temperature, magnetic fields, tunneling currents, voltage, force, and ion currents, among others.

Development of the UHV-STM

1990 ◽  
Vol 48 (1) ◽  
pp. 322-323
Author(s):  
M. Iwatsuki ◽  
S. Kitamura ◽  
A. Mogami
Keyword(s):  
Surface Science ◽  
Real Space ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Great Promise ◽  
Force Microscopy ◽  
Atomic Force ◽  
Stm Image ◽  
Surface Construction ◽  
Very High

Since Binnig, Rohrer and associates observed real-space topographic images of Si(111)-7×7 and invented the scanning tunneling microscope (STM),1) the STM has been accepted as a powerful surface science instrument.Recently, many application areas for the STM have been opened up, such as atomic force microscopy (AFM), magnetic force microscopy (MFM) and others. So, the STM technology holds a great promise for the future.The great advantages of the STM are its high spatial resolution in the lateral and vertical directions on the atomic scale. However, the STM has difficulty in identifying atomic images in a desired area because it uses piezoelectric (PZT) elements as a scanner.On the other hand, the demand to observe specimens under UHV condition has grown, along with the advent of the STM technology. The requirment of UHV-STM is especially very high in to study of surface construction of semiconductors and superconducting materials on the atomic scale. In order to improve the STM image quality by keeping the specimen and tip surfaces clean, we have built a new UHV-STM (JSTM-4000XV) system which is provided with other surface analysis capability.

The Electrical Characterization and Physical Failure Analysis for Transistor Gate Leakage

2006 ◽  
Author(s):  
Tsung-Te Li ◽  
Chao-Chi Wu ◽  
Jung-Hsiang Chuang ◽  
Jon C. Lee
Keyword(s):  
Failure Analysis ◽  
Electrical Characterization ◽  
Physical Analysis ◽  
Gate Leakage ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Voltage Stress ◽  
Leakage Site

Abstract This article describes the electrical and physical analysis of gate leakage in nanometer transistors using conducting atomic force microscopy (C-AFM), nano-probing, transmission electron microscopy (TEM), and chemical decoration on simulated overstressed devices. A failure analysis case study involving a soft single bit failure is detailed. Following the nano-probing analysis, TEM cross sectioning of this failing device was performed. A voltage bias was applied to exaggerate the gate leakage site. Following this deliberate voltage overstress, a solution of boiling 10%wt KOH was used to etch decorate the gate leakage site followed by SEM inspection. Different transistor leakage behaviors can be identified with nano-probing measurements and then compared with simulation data for increased confidence in the failure analysis result. Nano-probing can be used to apply voltage stress on a transistor or a leakage path to worsen the weak point and then observe the leakage site easier.

scholarly journals Development of Quantum Dot (QD) Based Color Converters for Multicolor Display

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1089
Author(s):  
Muhammad T. Sajjad ◽  
Ashu K. Bansal ◽  
Francesco Antolini ◽  
Eduard Preis ◽  
Lenuta Stroea ◽  
...  
Keyword(s):  
Polymer Matrix ◽  
Cost Effective ◽  
Final Size ◽  
Force Microscopy ◽  
Morphological Studies ◽  
Color Displays ◽  
Transmission Electron ◽  
Different Temperatures ◽  
Color Conversion ◽  
Temperature Time

Many displays involve the use of color conversion layers. QDs are attractive candidates as color converters because of their easy processability, tuneable optical properties, high photoluminescence quantum yield, and good stability. Here, we show that emissive QDs with narrow emission range can be made in-situ in a polymer matrix, with properties useful for color conversion. This was achieved by blending the blue-emitting pyridine based polymer with a cadmium selenide precursor and baking their films at different temperatures. To achieve efficient color conversion, blend ratio and baking temperature/time were varied. We found that thermal decomposition of the precursor leads to highly emissive QDs whose final size and emission can be controlled using baking temperature/time. The formation of the QDs inside the polymer matrix was confirmed through morphological studies using atomic force microscopy (AFM) and transmission electron microscopy (TEM). Hence, our approach provides a cost-effective route to making highly emissive color converters for multi-color displays.

scholarly journals The Domain and Microstructure of Resin-Bonded Magnets

Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 2849
Author(s):  
Marcin Jan Dośpiał
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Size ◽  
Size Distribution ◽  
Domain Structure ◽  
Grain Size Distribution ◽  
Exchange Interactions ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Scanning Electron

This paper presents domain and structure studies of bonded magnets made from nanocrystalline Nd-(Fe, Co)-B powder. The structure studies were investigated using scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), Mössbauer spectroscopy and X-ray diffractometry. On the basis of performed qualitative and quantitative phase composition studies, it was found that investigated alloy was mainly composed of Nd2(Fe-Co)14B hard magnetic phase (98 vol%) and a small amount of Nd1.1Fe4B4 paramagnetic phase (2 vol%). The best fit of grain size distribution was achieved for the lognormal function. The mean grain size determined from transmission electron microscopy (TEM) images on the basis of grain size distribution and diffraction pattern using the Bragg equation was about ≈130 nm. HRTEM images showed that over-stoichiometric Nd was mainly distributed on the grain boundaries as a thin amorphous border of 2 nm in width. The domain structure was investigated using a scanning electron microscope and metallographic light microscope, respectively, by Bitter and Kerr methods, and by magnetic force microscopy. Domain structure studies revealed that the observed domain structure had a labyrinth shape, which is typically observed in magnets, where strong exchange interactions between grains are present. The analysis of the domain structure in different states of magnetization revealed the dynamics of the reversal magnetization process.

scholarly journals Interface Structures and Electronic States of Epitaxial Tetraazanaphthacene on Single-Crystal Pentacene

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1088
Author(s):  
Yuki Gunjo ◽  
Hajime Kamebuchi ◽  
Ryohei Tsuruta ◽  
Masaki Iwashita ◽  
Kana Takahashi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Grazing Incidence ◽  
Force Microscopy ◽  
Interface Dipole ◽  
Atomic Force ◽  
Interfacial Structures ◽  
Donor And Acceptor ◽  
A Charge ◽  
Interface Structures

The structural and electronic properties of interfaces composed of donor and acceptor molecules play important roles in the development of organic opto-electronic devices. Epitaxial growth of organic semiconductor molecules offers a possibility to control the interfacial structures and to explore precise properties at the intermolecular contacts. 5,6,11,12-tetraazanaphthacene (TANC) is an acceptor molecule with a molecular structure similar to that of pentacene, a representative donor material, and thus, good compatibility with pentacene is expected. In this study, the physicochemical properties of the molecular interface between TANC and pentacene single crystal (PnSC) substrates were analyzed by atomic force microscopy, grazing-incidence X-ray diffraction (GIXD), and photoelectron spectroscopy. GIXD revealed that TANC molecules assemble into epitaxial overlayers of the (010) oriented crystallites by aligning an axis where the side edges of the molecules face each other along the [1¯10] direction of the PnSC. No apparent interface dipole was found, and the energy level offset between the highest occupied molecular orbitals of TANC and the PnSC was determined to be 1.75 eV, which led to a charge transfer gap width of 0.7 eV at the interface.

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

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