Spin manipulation with magnetic semiconductor barriers

2015 ◽  
Vol 17 (2) ◽  
pp. 751-761 ◽  
Author(s):  
Guo-Xing Miao ◽  
Jagadeesh S. Moodera
Keyword(s):  
Magnetic Fields ◽  
Magnetic Semiconductors ◽  
Magnetic Semiconductor ◽  
Spin Manipulation ◽  
New Phenomena ◽  
Unique Spin ◽  
Spin Filtering

Magnetic semiconductors with unique spin-filtering property and the ability to create excessive internal magnetic fields can open myriads of new phenomena.

MAGNETORESISTANCE OF NARROW GAP MAGNETIC SEMICONDUCTOR HETEROJUNCTIONS

SPIN ◽  
2013 ◽  
Vol 03 (04) ◽  
pp. 1340011
Author(s):  
B. W. WESSELS
Keyword(s):  
Magnetic Fields ◽  
Room Temperature ◽  
Magnetic Semiconductors ◽  
Magnetic Semiconductor ◽  
High Magnetic Fields ◽  
Narrow Gap ◽  
Carrier Scattering ◽  
Spin Polarized ◽  
Semiconductor Spintronics ◽  
Semiconductor Heterojunctions

Narrow gap III–V semiconductors have been investigated for semiconductor spintronics. By alloying these semiconductors with manganese magnetic semiconductors result. Large magnetoresistance (MR) effects have been observed in narrow gap magnetic semiconductor p–n heterojunctions. The MR which is positive is attributed to spin selective carrier scattering. For an InMnAs / InAs heterojunction a diode MR of 2680% is observed at room temperature and high magnetic fields. This work indicates that highly spin-polarized magnetic semiconductor heterojunctions can be realized that operate at room temperature. Devices based on the MR include spin diodes and bipolar magnetic junction transistors. We utilize the diode MR states to create a binary logic family.

Incoherent and coherent spin manipulation in ferromagnet-dilute magnetic semiconductor hybrids

2007 ◽  
Vol 204 (1) ◽  
pp. 191-201 ◽  
Author(s):  
Simon Halm ◽  
Patric Erich Hohage ◽  
Ekaterina Neshataeva ◽  
Frank Seifert ◽  
Tilmar Kümmell ◽  
...  
Keyword(s):  
Dilute Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Spin Manipulation ◽  
Coherent Spin

Effect of Low Temperature Annealing on High Field Magnetoresistance and Hall effect in (Ga, Mn)As Dilute Magnetic Semiconductors

2004 ◽  
Vol 831 ◽  
Author(s):  
K. Ghosh ◽  
Mohammad Arif ◽  
T. Kehl ◽  
R. J. Patel ◽  
S. R. Mishra ◽  
...  
Keyword(s):  
Transition Temperature ◽  
Low Temperature ◽  
High Field ◽  
Magnetic Semiconductors ◽  
Magnetic Semiconductor ◽  
Dilute Magnetic Semiconductors ◽  
Epitaxial Thin Films ◽  
Ferromagnetic Transition ◽  
Optimal Temperature ◽  
Low Temperature Annealing

ABSTRACTIn this paper we report the effect of low temperature annealing on the high field magnetotransport properties of epitaxial thin films of (Ga, Mn)As Dilute Magnetic Semiconductor (DMS) with low concentration (1.5 %) of Mn doping, which results in a ferromagnetic insulator. Annealing at an optimal temperature enhances the conductivity, carrier concentration, and ferromagnetic transition temperature. The field dependence of magnetoresistance is different below and above the ferromagnetic transition temperature. An attempt is made to analyze the data using a theoretical model proposed by Kaminski and Das Sarma [1].

Magnetic Properties of New Diluted Magnetic Semiconductors Pb1-X-YMgXYbYTe

2010 ◽  
Vol 168-169 ◽  
pp. 376-379
Author(s):  
E.A. Zvereva ◽  
O.A. Savelieva ◽  
S. Ibragimov ◽  
Y. Titov ◽  
E.I. Slynko ◽  
...  
Keyword(s):  
Magnetic Susceptibility ◽  
Magnetic Moment ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Electron Shell ◽  
Interaction Constant ◽  
Paramagnetic Resonance ◽  
Diluted Magnetic

We have studied the magnetic susceptibility, magnetization and electron paramagnetic resonance (EPR) in the diluted magnetic semiconductor Pb1-x-yMgxYbyTe. The magnetic susceptibility of this system is a superposition of the matrix diamagnetism, the paramagnetic contribution of electrons localized in the ytterbium band, and the Curie-Weiss paramagnetism provided by Yb3+ ions. The concentration of Yb3+ ions monotonically increases with the ytterbium content, while a significant fraction of ytterbium ions remains in a nonmagnetic Yb2+ state. A pronounced hyperfine structure was revealed in the EPR spectra. It was ascribed to the interaction between the electron magnetic moment of an unfilled electron shell of Yb3+ ions and nuclear magnetic moment of the 173Yb isotope. The estimated values of the effective g-factor (g1.997 0.002) and the hyperfine-interaction constant (173A=0,56 cm-1) were found to be almost independent of both alloy composition and temperature.

Submicron Heterostructures of Diluted Magnetic Semiconductors

1986 ◽  
Vol 89 ◽  
Author(s):  
R. L. Gunshor ◽  
L. A. Kolodziejski ◽  
N. Otsuka ◽  
S. Datta ◽  
A. V. Nurmikko
Keyword(s):  
Diluted Magnetic Semiconductors ◽  
Film Growth ◽  
Magnetic Semiconductors ◽  
Magnetic Semiconductor ◽  
High Energy ◽  
Substrate Material ◽  
Thin Film Growth ◽  
Quantum Well Structures ◽  
Antiferromagnetic Ordering ◽  
Diluted Magnetic

AbstractThe successful thin film growth of diluted magnetic semiconductors (DMS) by molecular beam epitaxy has “nucleated” a new field of research in which the DMS material is incorporated in a variety of novel superlattice and quantum well structures. The observation of reflection high energy electron diffraction intensity oscillations in ZnSe and MnSe has enabled the fabrication of ultrathin layered structures involving the “hypothetical” zincblende magnetic semiconductor MnSe. The expected antiferromagnetic ordering of MnSe is increasingly inhibited as the MnSe layer thickness is reduced from ten monolayers to the quasi-2D limit of one monolayer. Further developments include new observations of the epitaxial growth and nucleation of ZnSe, utilizing GaAs epilayers as the substrate material.

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