A first-principles study of the III–IV–V semiconductor nanosheets
2015 ◽
Vol 17
(2)
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pp. 1039-1046
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Keyword(s):
Band Gap
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Alloying the III–V and IV–IV sheets leads to III–IV–V nano-composites, such as the BC2N sheet, having a lower band gap than their parent III–V counterparts while having higher cohesive energies.