A first-principles study of the III–IV–V semiconductor nanosheets

2015 ◽  
Vol 17 (2) ◽  
pp. 1039-1046 ◽  
Author(s):  
Amrita Bhattacharya ◽  
Saswata Bhattacharya ◽  
G. P. Das

Alloying the III–V and IV–IV sheets leads to III–IV–V nano-composites, such as the BC2N sheet, having a lower band gap than their parent III–V counterparts while having higher cohesive energies.

2020 ◽  
Vol 137 ◽  
pp. 106320 ◽  
Author(s):  
D.M. Hoat ◽  
Mosayeb Naseri ◽  
Nguyen N. Hieu ◽  
R. Ponce-Pérez ◽  
J.F. Rivas-Silva ◽  
...  

2014 ◽  
Vol 16 (44) ◽  
pp. 24466-24472 ◽  
Author(s):  
Pin Xiao ◽  
Xiao-Li Fan ◽  
Li-Min Liu ◽  
Woon-Ming Lau

The band gap increases with increasing tensile strain to its maximum value at 6% strain and then decreases.


RSC Advances ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 3877-3883 ◽  
Author(s):  
Aaron Mei ◽  
Xuan Luo

The crystallized amino acid γ-glycine is a large band gap insulator that shows promise in the fields of photonics and non-linear optics.


RSC Advances ◽  
2016 ◽  
Vol 6 (98) ◽  
pp. 95846-95854 ◽  
Author(s):  
Wencheng Tang ◽  
Minglei Sun ◽  
Qingqiang Ren ◽  
Yajun Zhang ◽  
Sake Wang ◽  
...  

Using first principles calculations, we predicted that a direct-band-gap between 0.98 and 2.13 eV can be obtained in silicene by symmetrically and asymmetrically (Janus) functionalisation with halogen atoms and applying elastic tensile strain.


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