scholarly journals Effect of metal film thickness on Tamm plasmon-coupled emission

2014 ◽  
Vol 16 (46) ◽  
pp. 25523-25530 ◽  
Author(s):  
Yikai Chen ◽  
Douguo Zhang ◽  
Liangfu Zhu ◽  
Qiang Fu ◽  
Ruxue Wang ◽  
...  
Keyword(s):  
Film Thickness ◽  
Surface Plasmons ◽  
Metal Film ◽  
Ag Film ◽  
Angle Dependent Reflectivity

We calculated the angle-dependent reflectivity of a Tamm structure, which demonstrates the effect of Ag film thickness on the excitation of surface plasmons and Tamm plasmons.

The method of replication affects metal film granularity and resolution

1989 ◽  
Vol 47 ◽  
pp. 708-709
Author(s):  
George C. Ruben
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Film Thickness ◽  
Single Molecule ◽  
Metal Film ◽  
Vertical Surface ◽  
High Resolution Imaging ◽  
Controllable Factors ◽  
Resolution Imaging

Single molecule resolution in electron beam sensitive, uncoated, noncrystalline materials has been impossible except in thin Pt-C replicas ≤ 150Å) which are resistant to the electron beam destruction. Previously the granularity of metal film replicas limited their resolution to ≥ 20Å. This paper demonstrates that Pt-C film granularity and resolution are a function of the method of replication and other controllable factors. Low angle 20° rotary , 45° unidirectional and vertical 9.7±1 Å Pt-C films deposited on mica under the same conditions were compared in Fig. 1. Vertical replication had a 5A granularity (Fig. 1c), the highest resolution (table), and coated the whole surface. 45° replication had a 9Å granulartiy (Fig. 1b), a slightly poorer resolution (table) and did not coat the whole surface. 20° rotary replication was unsuitable for high resolution imaging with 20-25Å granularity (Fig. 1a) and resolution 2-3 times poorer (table). Resolution is defined here as the greatest distance for which the metal coat on two opposing faces just grow together, that is, two times the apparent film thickness on a single vertical surface.

Evaluation of thin metal film thickness from light attenuation and multi-reflection effects on micro-Raman response

2013 ◽  
Vol 536 ◽  
pp. 142-146 ◽  
Author(s):  
C. Camerlingo ◽  
M.P. Lisitskiy ◽  
L. De Stefano ◽  
I. Rea ◽  
I. Delfino ◽  
...  
Keyword(s):  
Film Thickness ◽  
Metal Film ◽  
Light Attenuation ◽  
Thin Metal Film ◽  
Thin Metal ◽  
Raman Response

Film Thickness Effect on Tensile Properties and Microstructures of Submicron Aluminum Thin Films on Polyimide

1996 ◽  
Vol 436 ◽  
Author(s):  
Y. S. Kang ◽  
P. S. Ho ◽  
R. Knipe ◽  
J. Tregilgas
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Film Thickness ◽  
Metal Film ◽  
Tensile Force ◽  
Thickness Effect ◽  
Published Data ◽  
Free Standing ◽  
Aluminum Films ◽  
Flexible Polymer

AbstractThe mechanical behavior of the metal film on a polymer substrate becomes an important issue in microelectronics metallization. The metal/polymer structure is also useful to investigate the deformation behavior of very thin free-standing metal film since the flexible polymer serves as a deformable substrate. The tensile force-elongation curves have been measured using a microtensile tester for aluminum thin films, deposited on a PMDA-ODA polyimide film, in the thickness range from 60 rum to 480 nm. The stress-strain curves for aluminum films were constructed by subtracting these curves with polyimide curves measured separately. Tensile strength increases linearly with decreasing film thickness from 196 MPa to 408 MPa within the film thickness range studied. This is in good agreement with the published data for free-standing aluminum films in the same thickness range. The measured Young's modulus is lower than the bulk modulus and exhibits no systematic dependence on the film thickness. The microstructures of aluminum films have been examined using a transmission electron microscope (TEM). These films posses the (111)-textured columnar grain structures. Grain sizes exhibit log-normal distributions and the mean grain size increases monotonically with the film thickness. An attempt is made to evaluate the effect of film thickness and grain size on the strength of aluminum thin film and the result is discussed.

Low Temperature Intermixing Reactions Between Silicon and Metals

1981 ◽  
Vol 10 ◽  
Author(s):  
Akio Hiraki ◽  
T. Narusawa ◽  
W. M. Gibson
Keyword(s):  
Film Thickness ◽  
Metal Film ◽  
Dielectric Constants ◽  
Semiconductor Surface ◽  
Free Electrons ◽  
Coulombic Interaction ◽  
Screening Model ◽  
Energy Gaps ◽  
Deposited Metal ◽  
Critical Film Thickness

Metal films such as gold, copper, nickel and palladium exhibit an interfacial intermixing reaction at room temperature with semiconductors with energy gaps Eg less than about 2.5 eV or dielectric constants ε larger than about 81. We have proposed a model2 of the triggering mechanism of this interfacial reaction based on the ability of a metal to screen coulombic interaction by its mobile free electrons. Such a screening may disturb the electron distribution responsible for the covalent bonding, and consequently it may make the semiconductor surface reactive towards the metal. In this respect, there must be a critical film thickness for the deposited metal film to behave as a true metal with sufficient mobile free electrons for the screening; therefore the reactivity of the semiconductor surface for the intermixing reaction must be dependent on the thickness of the deposited metal film. In favour of the screening model, we show that the reactivity of a silicon surface for intermixing or silicide formation with a gold or palladium film depends clearly on the film thickness.

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