Condensation of vapor species at the outlets in high temperature chemical vapor deposition using tetramethylsilane as a precursor for SiC bulk growth

CrystEngComm ◽  
2015 ◽  
Vol 17 (16) ◽  
pp. 3148-3152 ◽  
Author(s):  
Byeong Geun Kim ◽  
Ji-Young Yoon ◽  
Chang-Hyoung Yoo ◽  
Deok-Hui Nam ◽  
Myung-Hyun Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Species ◽  
Bulk Growth

High-Temperature Chemical Vapor Deposition for SiC Single Crystal Bulk Growth Using Tetramethylsilane as a Precursor

2014 ◽  
Vol 14 (11) ◽  
pp. 5569-5574 ◽  
Author(s):  
Deok-Hui Nam ◽  
Byeong Geun Kim ◽  
Ji-Young Yoon ◽  
Myung-Hyun Lee ◽  
Won-Seon Seo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bulk Growth ◽  
Crystal Bulk

scholarly journals The Progress on Low-Cost, High-Quality, High-Temperature Superconducting Tapes Deposited by the Combustion Chemical Vapor Deposition Process

2001 ◽  
Vol 689 ◽  
Author(s):  
Shara S. Shoup ◽  
Marvis K. White ◽  
Steve L. Krebs ◽  
Natalie Darnell ◽  
Adam C. King ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Critical Current Density ◽  
Buffer Layer ◽  
Critical Current ◽  
Vapor Deposition ◽  
Low Cost ◽  
Chemical Vapor ◽  
High Critical Current Density ◽  
High Quality

ABSTRACTThe innovative Combustion Chemical Vapor Deposition (CCVD) process is a non-vacuum technique that is being investigated to enable next generation products in several application areas including high-temperature superconductors (HTS). In combination with the Rolling Assisted Biaxially Textured Substrate (RABiTS) technology, the CCVD process has significant promise to provide low-cost, high-quality lengths of YBCO coated conductor. The CCVD technology has been used to deposit both buffer layer coatings as well as YBCO superconducting layers. A buffer layer architecture of strontium titanate and ceria have been deposited by CCVD on textured nickel substrates and optimized to appropriate thicknesses and microstructures to provide templates for growing PLD YBCO with high critical current density values. The CCVD buffer layers have been scaled to meter plus lengths with good epitaxial uniformity along the length. A short sample cut from one of the lengths enabled high critical current density PLD YBCO. Films of CCVD YBCO superconductors have been grown on single crystal substrates with critical current densities over 1 MA/cm2. Work is currently in progress to combine both the buffer layer and superconductor technologies to produce high-quality coupons of HTS tape made entirely by the non-vacuum CCVD process.

High temperature chemical vapor deposition of SiC

1996 ◽  
Vol 69 (10) ◽  
pp. 1456-1458 ◽  
Author(s):  
O. Kordina ◽  
C. Hallin ◽  
A. Ellison ◽  
A. S. Bakin ◽  
I. G. Ivanov ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor

Intelligent Process Control of Silicon Nitride Chemical Vapor Deposition

1994 ◽  
Vol 363 ◽  
Author(s):  
Paul S. Bowen ◽  
Steve K. Phelps ◽  
Harry I. Ringermacher ◽  
Richard D. Veltri
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Silicon Nitride ◽  
Process Control ◽  
Real Time ◽  
Vapor Deposition ◽  
Process Model ◽  
Chemical Vapor ◽  
Laser Ultrasonics ◽  
Hierarchical Architecture

AbstractThe chemical vapor deposition of silicon nitride can be used to protect advanced materials and composites from high temperature, corrosive, and oxidative environments. Desired coating characteristics, such as uniformity and morphology, cannot be measured in-situ by traditional sensors due to the adverse conditions within the high-temperature reactor. A control strategy has been developed which utilizes a process model and an advanced laser-based sensor to measure the deposition rate of the silicon nitride coating in real-time. The control system is based on a three level hierarchical architecture which functionally separates the process control into PID, supervisory and advanced sensor-based control. Optimal setpoint schedules for the supervisory level are derived from a quasi-fuzzy logic inverse mapping of the process model. An advanced sensor utilizing laser ultrasonics provides real-time coating thickness estimates. Model bias is characterized for each reactor and is correlated on-line with the sensor's deposit thickness estimate. Deviations from model predictions may result in parametric changes to the process model. New setpoint schedules are then created as input to the supervisory control level by regenerating the inverse map of the updated process model.

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

2016 ◽  
Vol 119 (14) ◽  
pp. 145702 ◽  
Author(s):  
Pramod Reddy ◽  
Shun Washiyama ◽  
Felix Kaess ◽  
M. Hayden Breckenridge ◽  
Luis H. Hernandez-Balderrama ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Band Offsets ◽  
Pressure Chemical

High-temperature degradation in plasma-enhanced chemical vapor deposition Al2O3 surface passivation layers on crystalline silicon

2014 ◽  
Vol 116 (5) ◽  
pp. 054507 ◽  
Author(s):  
Saskia Kühnhold ◽  
Pierre Saint-Cast ◽  
Bishal Kafle ◽  
Marc Hofmann ◽  
Francesco Colonna ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Vapor Deposition ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Passivation Layers
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