Unravelling transient phases during thermal oxidation of copper for dense CuO nanowire growth

CrystEngComm ◽  
2014 ◽  
Vol 16 (16) ◽  
pp. 3264-3267 ◽  
Author(s):  
Fei Wu ◽  
Yoon Myung ◽  
Parag Banerjee
Keyword(s):  
Raman Spectroscopy ◽  
Grain Boundaries ◽  
Thermal Oxidation ◽  
High Purity ◽  
Direct Evidence ◽  
Nanowire Growth ◽  
Cupric Ion ◽  
Cuo Nanowire ◽  
Transient Phases

Direct evidence of cupric ion outdiffusion through grain boundaries during thermal oxidation of high purity Cu is obtained using Raman spectroscopy.

CuO nanowire growth on Cu2O by in situ thermal oxidation in air

CrystEngComm ◽  
2013 ◽  
Vol 15 (42) ◽  
pp. 8559 ◽  
Author(s):  
Ang Li ◽  
Huaihe Song ◽  
Jisheng Zhou ◽  
Xiaohong Chen ◽  
Siyuan Liu
Keyword(s):  
Thermal Oxidation ◽  
Nanowire Growth ◽  
Cuo Nanowire ◽  
Oxidation In Air

Effect of surface stresses on CuO nanowire growth in the thermal oxidation of copper

2011 ◽  
Vol 512 (1-3) ◽  
pp. 87-91 ◽  
Author(s):  
Rediola Mema ◽  
Lu Yuan ◽  
Qingtian Du ◽  
Yiqian Wang ◽  
Guangwen Zhou
Keyword(s):  
Thermal Oxidation ◽  
Nanowire Growth ◽  
Surface Stresses ◽  
Cuo Nanowire ◽  
Effect Of Surface

Residual Stress Measurement in Silicon Substrate After Local Thermal Oxidation Using Microscopic Raman Spectroscopy

1991 ◽  
Vol 226 ◽  
Author(s):  
Hideo Miura ◽  
Hiroshi Sakata ◽  
Shinji Sakata Merl
Keyword(s):  
Residual Stress ◽  
Raman Spectroscopy ◽  
Tensile Stress ◽  
Oxide Film ◽  
Film Thickness ◽  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Silicon Substrate ◽  
Nitride Film ◽  
Oxide Film Thickness

AbstractThe residual stress in silicon substrates after local thermal oxidation is discussed experimentally using microscopic Raman spectroscopy. The stress distribution in the silicon substrate is determined by three main factors: volume expansion of newly grown silicon–dioxide, deflection of the silicon–nitride film used as an oxidation barrier, and mismatch in thermal expansion coefficients between silicon and silicon dioxide.Tensile stress increases with the increase of oxide film thickness near the surface of the silicon substrate under the oxide film without nitride film on it. The tensile stress is sometimes more than 100 MPa. On the other hand, a complicated stress change is observed near the surface of the silicon substrate under the nitride film. The tensile stress increases initially, as it does in the area without nitride film on it. However, it decreases with the increase of oxide film thickness, then the compressive stress increases in the area up to 170 MPa. This stress change is explained by considering the drastic structural change of the oxide film under the nitride film edge during oxidation.

Migration of grain boundaries and triple junctions in high-purity aluminum during annealing after slight cold rolling

2015 ◽  
Vol 107 ◽  
pp. 134-138 ◽  
Author(s):  
Wenhong Yin ◽  
Weiguo Wang ◽  
Xiaoying Fang ◽  
Congxiang Qin ◽  
Xiaoguang Xing
Keyword(s):  
Cold Rolling ◽  
Grain Boundaries ◽  
High Purity ◽  
Triple Junctions ◽  
High Purity Aluminum

scholarly journals Development of "In-situ" Observation System for Oxide Films Formed during Thermal Oxidation Using Raman Spectroscopy

1995 ◽  
Vol 81 (6) ◽  
pp. 607-612 ◽  
Author(s):  
Takayuki NARUSHIMA ◽  
Naoki KIKUCHI ◽  
Makoto MARUYAMA ◽  
Haruo ARASHI ◽  
Yuichiro NISHINA ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Thermal Oxidation ◽  
Oxide Films ◽  
Observation System ◽  
In Situ Observation

In situ Raman spectroscopy study on the effect of antioxidants on high temperature oxidation properties of TMPTO

2019 ◽  
Vol 71 (5) ◽  
pp. 706-711 ◽  
Author(s):  
Bingxue Cheng ◽  
Haitao Duan ◽  
Yongliang Jin ◽  
Lei Wei ◽  
Jia Dan ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
High Temperature ◽  
Thermal Oxidation ◽  
High Temperature Oxidation ◽  
Isothermal Oxidation ◽  
In Situ Raman Spectroscopy ◽  
Temperature Oxidation ◽  
Content Type ◽  
Structure Changes ◽  
Oxidation Properties

Purpose This paper aims to investigate the thermal oxidation characteristics of the unsaturated bonds (C=C) of trimethylolpropane trioleate (TMPTO) and to reveal the high temperature oxidation decay mechanism of unsaturated esters and the nature of the anti-oxidation properties of the additives. Design/methodology/approach Using a DXR laser microscopic Raman spectrometer and Linkam FTIR600 temperature control platform, the isothermal oxidation experiments of TMPTO with or without 1.0 wt. % of different antioxidants were performed. Findings The results indicated that the Raman peaks of =C-H, C=C and -CH2- weaken gradually with prolonged oxidation time, and the corresponding Raman intensities drop rapidly at higher temperatures. The aromatic amine antioxidant can decrease the attenuation of peak intensity, as it significantly reduces the rate constant of C=C thermal oxidation. The hindered phenolic antioxidant has a protective effect during the early stages of oxidation (induction period), but it may accelerate the oxidation of C=C afterwards. Originality/value Research on the structure changes of synthetic esters during oxidation by Raman spectroscopy will be of great importance in promoting the use of Raman spectroscopy to analyze the oxidation of lubricants.

X-Ray Reflectivity Study of Single- and Bicrystals of Gold

1990 ◽  
Vol 208 ◽  
Author(s):  
M. R. Fitzsimmons ◽  
E. Burkel ◽  
J. Peisl
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Diffuse Scattering ◽  
Direct Evidence ◽  
X Ray ◽  
Specular Reflectivity ◽  
Boundary Measurements

ABSTRACTX-ray reflectivity techniques have been used to characterize the surfaces of 0.4µm thick Au films epitaxially grown on single-crystals of NaCl. Measurements of both the specular and non-specular reflectivity suggest that the Au surface is very rough. The nonspecular reflectivity provides valuable information about the correlation of the heights at different points on the surface. The first in situ reflectivity study of the formation and destruction of a grain boundary shows direct evidence for the existence of diffuse scattering from the grain boundary. Measurements of several [0011 twist grain boundaries suggest that the roughness and texture of an interface depends upon the geometrical orientation of the surrounding substrates.

Isolated High-Purity Platinum Nanowire Growth via Field Emission from a Multi-Walled Carbon Nanotube

2011 ◽  
Vol 4 (3) ◽  
pp. 035001 ◽  
Author(s):  
Zhan Yang ◽  
Masahiro Nakajima ◽  
Yahachi Saito ◽  
Yasuhito Ode ◽  
Toshio Fukuda
Keyword(s):  
Carbon Nanotube ◽  
Field Emission ◽  
High Purity ◽  
Nanowire Growth ◽  
Multi Walled Carbon Nanotube
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