scholarly journals An STM study of molecular exchange processes in organic thin film growth

2014 ◽  
Vol 50 (69) ◽  
pp. 9954-9957 ◽  
Author(s):  
José M. Gallego ◽  
David Ecija ◽  
Nazario Martín ◽  
Roberto Otero ◽  
Rodolfo Miranda
Keyword(s):  
Thin Film ◽  
Surface Diffusion ◽  
Outer Surface ◽  
Film Growth ◽  
Thin Film Growth ◽  
Organic Thin Film ◽  
Exchange Processes

PCBM molecules deposited on an exTTF layer grown on Au(111) exchange places with the exTTF molecules, expelling them to the outer surface, even at 150 K, when the surface diffusion of the exTTF molecules is completely frozen.

Characterization of Step-Edge Barriers in Organic Thin-Film Growth

Science ◽  
2008 ◽  
Vol 321 (5885) ◽  
pp. 108-111 ◽  
Author(s):  
G. Hlawacek ◽  
P. Puschnig ◽  
P. Frank ◽  
A. Winkler ◽  
C. Ambrosch-Draxl ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Step Edge ◽  
Organic Thin Film

scholarly journals Coverage dependent adsorption dynamics in hyperthermal organic thin film growth

2009 ◽  
Vol 130 (12) ◽  
pp. 124701 ◽  
Author(s):  
A. Amassian ◽  
T. V. Desai ◽  
S. Kowarik ◽  
S. Hong ◽  
A. R. Woll ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Organic Thin Film ◽  
Adsorption Dynamics

THE MORPHOLOGY AND EVOLUTION OF THE SURFACE IN EPITAXIAL AND THIN FILM GROWTH: A CONTINUUM MODEL WITH SURFACE DIFFUSION

Fractals ◽  
1993 ◽  
Vol 01 (04) ◽  
pp. 753-766 ◽  
Author(s):  
FEREYDOON FAMILY ◽  
JACQUES G. AMAR
Keyword(s):  
Thin Film ◽  
Surface Diffusion ◽  
Film Growth ◽  
Vertical Jump ◽  
Thin Film Growth ◽  
Discrete Models ◽  
Dynamic Scaling ◽  
Diffusion Operator ◽  
Continuum Equation ◽  
The Continuum

A number of discrete models as well as continuum equations have been proposed for describing epitaxial and thin film growth. We have shown that there exists a macroscopic groove instability in many of these models. This unphysical feature in the continuum equations arises from the truncation or linearization of the diffusion operator along the surface. A similar artifact occurs in the discrete models, because in these models adatoms only diffuse horizontally and must take an unphysical vertical jump at step edges. We have proposed and studied a continuum equation for epitaxial and thin-film growth in which the full diffusion along the surface is taken into account. The results of the solutions of this continuum equation, for the growth and the morphology of the surface, are in excellent agreement with recent low temperature molecular-beam epitaxy and ion-sputtering experiments. In particular, we find that at late times dynamic scaling breaks down and the surface is no longer a self-affine fractal. The surface develops a characteristic morphology whose dependence on deposition rate and surface diffusion is similar to that found in experiments.

scholarly journals From flat to tilted: gradual interfaces in organic thin film growth

Nanoscale ◽  
2020 ◽  
Vol 12 (6) ◽  
pp. 3834-3845 ◽  
Author(s):  
Laura Katharina Scarbath-Evers ◽  
René Hammer ◽  
Dorothea Golze ◽  
Martin Brehm ◽  
Daniel Sebastiani ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Growth Mechanism ◽  
Film Growth ◽  
Thin Film Growth ◽  
Organic Thin Film ◽  
Interfacial Layers ◽  
Bulk Structure

An unexpected growth mechanism for organic semiconductors on gold where the molecules approach their bulk structure over several interfacial layers.

Evidence for a Layer-Dependent Ehrlich-Schwöbel Barrier in Organic Thin Film Growth

2009 ◽  
Vol 103 (13) ◽  
Author(s):  
XueNa Zhang ◽  
Esther Barrena ◽  
Dipak Goswami ◽  
Dimas G. de Oteyza ◽  
Claudia Weis ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Organic Thin Film

scholarly journals Polarization-dependent differential reflectance spectroscopy for real-time monitoring of organic thin film growth

2015 ◽  
Vol 86 (11) ◽  
pp. 113108 ◽  
Author(s):  
A. Navarro-Quezada ◽  
M. Aiglinger ◽  
E. Ghanbari ◽  
Th. Wagner ◽  
P. Zeppenfeld
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Film Growth ◽  
Reflectance Spectroscopy ◽  
Thin Film Growth ◽  
Organic Thin Film ◽  
Real Time Monitoring

Ehrlich-Schwoebel Barriers and Island Nucleation in Organic Thin-Film Growth

2013 ◽  
pp. 79-106 ◽  
Author(s):  
Christian Teichert ◽  
Gregor Hlawacek ◽  
Adolf Winkler ◽  
Peter Puschnig ◽  
Claudia Draxl
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Organic Thin Film ◽  
Island Nucleation

High Performance N-type Organic Thin-Film Transistors with Inert Contact Metals

2009 ◽  
Vol 1154 ◽  
Author(s):  
Sarah Schols ◽  
Lucas Van Willigenburg ◽  
Robert Müller ◽  
Dieter Bode ◽  
Maarten Debucquoy ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Film Growth ◽  
High Vacuum ◽  
Thin Film Growth ◽  
Organic Thin Film ◽  
Deposition Fluxes ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Temperatures

AbstractThin film growth by high vacuum evaporation of the n-type organic semiconductor 5, 5″′-diperfluorohexylcarbonyl-2,2′:5′,2″:5″,2″′-quaterthiophene (DFHCO-4T) on poly-(α-methylstyrene)-coated n++-Si/SiO2 substrates is investigated at various deposition fluxes and substrate temperatures. Film characterization by atomic force microscopy reveals typical Stransky-Krastanov growth. Transistors with Au source-drain top contacts and optimized DFHCO-4T deposition conditions attain an apparent saturation mobility of 4.6 cm2/Vs, whereas this parameter is 100× lower for similar transistors with LiF/Al top contacts. We explain this lower performance by the formation of a thin interfacial layer with poor injection properties resulting from a redox reaction between Al and DFHCO-4T.

Sign in / Sign up

Export Citation Format

Share Document