scholarly journals The use of a rigid tritopic phosphonic ligand for the synthesis of a robust honeycomb-like layered zirconium phosphonate framework

2014 ◽  
Vol 50 (43) ◽  
pp. 5737-5740 ◽  
Author(s):  
Marco Taddei ◽  
Ferdinando Costantino ◽  
Riccardo Vivani ◽  
Stefano Sabatini ◽  
Sang-Ho Lim ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Microwave Heating ◽  
Zirconium Phosphonate ◽  
Hydrolysis Resistance

1,3,5-Tris(4-phosphonophenyl)benzene was synthesized via a microwave heating assisted route and was subsequently used for the preparation of a new zirconium phosphonate with honeycomb-like structure displaying remarkable thermal stability and hydrolysis resistance.

Nanoporous Zirconium Phosphonate Materials with Enhanced Chemical and Thermal Stability for Sorbent Applications

2020 ◽  
Vol 3 (4) ◽  
pp. 3717-3729
Author(s):  
Jessica Veliscek-Carolan ◽  
Aditya Rawal ◽  
Daniel T. Oldfield ◽  
Gordon J. Thorogood ◽  
Nicholas M. Bedford
Keyword(s):  
Thermal Stability ◽  
Zirconium Phosphonate

Phase and thermal stability of nanocrystalline hydroxyapatite prepared via microwave heating

2006 ◽  
Vol 447 (1) ◽  
pp. 115-120 ◽  
Author(s):  
Siwaporn Meejoo ◽  
Weerakanya Maneeprakorn ◽  
Pongtip Winotai
Keyword(s):  
Thermal Stability ◽  
Microwave Heating ◽  
Nanocrystalline Hydroxyapatite ◽  
Thermal Stability Of

Influence of the Shape of Composites Materials on the Stability of Microwave Heating Processes

2021 ◽  
Vol 42 ◽  
pp. 36-41
Author(s):  
Robert Cristian Marin ◽  
Iulian Ştefan ◽  
Mihaela Cristina Predescu ◽  
Sorin Vasile Savu
Keyword(s):  
Thermal Stability ◽  
Microwave Heating ◽  
Microwave Plasma ◽  
Experimental Program ◽  
Combustion Engines ◽  
Nitrogen Oxide Emissions ◽  
Fast Heating ◽  
Composites Materials ◽  
Different Shapes ◽  
The Stability

This paper aims to present preliminary researches on the influence of the shape and dimensions of composites materials on the stability of microwave heating. The research was focused on cordierite composite material, which is used as ceramic substrate in selective catalytic reaction for reduction of nitrogen oxide emissions from combustion engines. For experimental program were used different shapes for cordierite material, such as cubic, cylindrical, sphere and rectangular. Based on previous researches where it was demonstrated that an injected microwave power between 600 W and 1200 W, the samples were heated in order to establish which shape is more suitable for fast heating, thermal stability in terms of thermal runaway as well as for avoiding the unwanted microwave plasma initiation.

Thermal Stability of Ceramic Materials in Microwave Heating

1995 ◽  
Vol 78 (4) ◽  
pp. 1041-1048 ◽  
Author(s):  
Mark S. Spotz ◽  
Daniel J. Skamser ◽  
D. Lynn Johnson
Keyword(s):  
Thermal Stability ◽  
Microwave Heating ◽  
Ceramic Materials ◽  
Thermal Stability Of

scholarly journals Effect of Calcium on Absorption Properties and Thermal Stability of Milk during Microwave Heating

2018 ◽  
Vol 19 (6) ◽  
pp. 1747 ◽  
Author(s):  
Yejun Wu ◽  
Daming Fan ◽  
Feng Hang ◽  
Bowen Yan ◽  
Jianxin Zhao ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Microwave Heating ◽  
Absorption Properties ◽  
Thermal Stability Of

Polyaniline–zirconium phosphonate composites: Thermal stability and spectroscopic study

2020 ◽  
Vol 147 ◽  
pp. 109634 ◽  
Author(s):  
Klára Melánová ◽  
Ludvík Beneš ◽  
Vítězslav Zima ◽  
Miroslava Trchová ◽  
Jaroslav Stejskal
Keyword(s):  
Thermal Stability ◽  
Spectroscopic Study ◽  
Zirconium Phosphonate

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Evolution of the microstructure of Cu(Ti)/SiO2 layers annealed in NH3

1995 ◽  
Vol 53 ◽  
pp. 452-453
Author(s):  
J. Liu ◽  
N. D. Theodore ◽  
D. Adams ◽  
S. Russell ◽  
T. L. Alford ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Titanium Nitride ◽  
Large Scale ◽  
Standard Procedure ◽  
Alloy Film ◽  
Electron Beam Evaporation ◽  
Copper Metallization ◽  
Nominal Composition ◽  
Ti Alloy ◽  
Thermally Grown

Copper-based metallization has recently attracted extensive research because of its potential application in ultra-large-scale integration (ULSI) of semiconductor devices. The feasibility of copper metallization is, however, limited due to its thermal stability issues. In order to utilize copper in metallization systems diffusion barriers such as titanium nitride and other refractory materials, have been employed to enhance the thermal stability of copper. Titanium nitride layers can be formed by annealing Cu(Ti) alloy film evaporated on thermally grown SiO2 substrates in an ammonia ambient. We report here the microstructural evolution of Cu(Ti)/SiO2 layers during annealing in NH3 flowing ambient.The Cu(Ti) films used in this experiment were prepared by electron beam evaporation onto thermally grown SiO2 substrates. The nominal composition of the Cu(Ti) alloy was Cu73Ti27. Thermal treatments were conducted in NH3 flowing ambient for 30 minutes at temperatures ranging from 450°C to 650°C. Cross-section TEM specimens were prepared by the standard procedure.

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