Phase and thermal stability of nanocrystalline hydroxyapatite prepared via microwave heating

2006 ◽  
Vol 447 (1) ◽  
pp. 115-120 ◽  
Author(s):  
Siwaporn Meejoo ◽  
Weerakanya Maneeprakorn ◽  
Pongtip Winotai
Keyword(s):  
Thermal Stability ◽  
Microwave Heating ◽  
Nanocrystalline Hydroxyapatite ◽  
Thermal Stability Of

Effect of Heating Mode on Thermal Stability of Nanocrystalline Hydroxyapatite

JOM ◽  
2019 ◽  
Vol 72 (4) ◽  
pp. 1673-1679
Author(s):  
Qian Peng ◽  
Yuehong Wang ◽  
Zhangui Tang
Keyword(s):  
Thermal Stability ◽  
Nanocrystalline Hydroxyapatite ◽  
Heating Mode ◽  
Thermal Stability Of

Thermal Stability of Ceramic Materials in Microwave Heating

1995 ◽  
Vol 78 (4) ◽  
pp. 1041-1048 ◽  
Author(s):  
Mark S. Spotz ◽  
Daniel J. Skamser ◽  
D. Lynn Johnson
Keyword(s):  
Thermal Stability ◽  
Microwave Heating ◽  
Ceramic Materials ◽  
Thermal Stability Of

Sr- and/or Mg-Containing Nanocrystalline Hydroxyapatite: Study from Synthesis to Calcined Products

2016 ◽  
Vol 721 ◽  
pp. 167-171
Author(s):  
Liga Stipniece ◽  
Inga Narkevica ◽  
Kristine Salma-Ancane ◽  
Dagnija Loca
Keyword(s):  
Thermal Stability ◽  
Thermal Behavior ◽  
Biologically Active ◽  
Precipitation Method ◽  
Sintering Behavior ◽  
Minor Phase ◽  
Major Phase ◽  
Nanocrystalline Hydroxyapatite ◽  
Deviation From Stoichiometry ◽  
Thermal Stability Of

In this work, nanocrystalline hydroxyapatite (HAp) powders were synthesized through wet precipitation method by adjusting the reaction temperature between 0 °C and 5 °C. The influence of biologically active Mg and Sr addition on HAp crystalline structure and thermal behavior was assessed. In all synthesis, nanocrystalline and/or amorphous HAp was found to be the major phase, and was accompanied by Ca(OH)2 as the minor phase. Results suggested that Sr and Mg have an impending effect on nucleation, crystallization and thermal stability of HAp. The addition of Sr or Mg promoted deviation from stoichiometry and formation of amorphous components, which affected thermal stability and sintering behavior of the synthesis products.

scholarly journals Effect of Calcium on Absorption Properties and Thermal Stability of Milk during Microwave Heating

2018 ◽  
Vol 19 (6) ◽  
pp. 1747 ◽  
Author(s):  
Yejun Wu ◽  
Daming Fan ◽  
Feng Hang ◽  
Bowen Yan ◽  
Jianxin Zhao ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Microwave Heating ◽  
Absorption Properties ◽  
Thermal Stability Of

Synthesis of Carbonate and Fluorine Substituted Nanocrystalline Hydroxyapatite by Mechanochemical Method

2020 ◽  
Vol 833 ◽  
pp. 204-208
Author(s):  
Saikiran Amruthaluru ◽  
Siva Kumar Mamidi ◽  
Manu Harilal ◽  
Hariprasad Sampatirao ◽  
Rameshbabu Nagumothu
Keyword(s):  
Thermal Stability ◽  
Milling Time ◽  
Ammonium Fluoride ◽  
X Ray Diffraction ◽  
Mechanochemical Method ◽  
Nanocrystalline Hydroxyapatite ◽  
Ftir Technique ◽  
Time Required ◽  
Diammonium Hydrogen ◽  
Thermal Stability Of

The present work is aimed at the synthesis of fluorine substituted and carbonate substituted hydroxyapatites (FHA, CHA) by the mechanochemical method. The shortest milling time required for the synthesis of FHA and CHA using calcium hydroxide and diammonium hydrogen phosphate as precursors was estimated. In addition to the Ca and P precursors, ammonium carbonate and ammonium fluoride were used for carbonate and fluorine substitutions, respectively. Thermal stability of the synthesized FHA and CHA was evaluated. The phase composition and crystallite size were evaluated by the X-Ray Diffraction (XRD). Fourier Transform Infrared Spectroscopy (FTIR) technique was employed to confirm the functional groups corresponding to the FHA and CHA. Thermal stability of the FHA and CHA was determined by the XRD and FTIR studies on the FHA and CHA powders annealed at 900 °C. From the XRD and FTIR results, it is observed that the 30 min milling time is the shortest time for the complete formation of FHA and CHA. The powders synthesized with a minimum milling time of 30 min exhibited better thermal stability.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Practical criteria for the thermal stability of a unidimensional superconductor

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Time and thermal stability of magnetic properties of amorphous Fe80TM3B17 alloys

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas
Keyword(s):  
Thermal Stability ◽  
Magnetic Properties ◽  
Thermal Stability Of
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