Electrochemical reduction of carbon dioxide III. The role of oxide layer thickness on the performance of Sn electrode in a full electrochemical cell

2014 ◽  
Vol 2 (6) ◽  
pp. 1647-1651 ◽  
Author(s):  
Jingjie Wu ◽  
Frank G. Risalvato ◽  
Shuguo Ma ◽  
Xiao-Dong Zhou
2020 ◽  
Vol 40 ◽  
pp. 156-170 ◽  
Author(s):  
Ping Shao ◽  
Luocai Yi ◽  
Shumei Chen ◽  
Tianhua Zhou ◽  
Jian Zhang

Author(s):  
Mengran Li ◽  
Mohamed Nazmi Idros ◽  
Yuming Wu ◽  
Thomas Burdyny ◽  
Sahil Garg ◽  
...  

The electrochemical reduction of carbon dioxide (CO2RR) requires access to ample gaseous CO2 and liquid water to fuel reactions at high current densities for industrial-scale. Substantial improvement of the CO2RR...


2021 ◽  
Author(s):  
Mengran Li ◽  
Mohamed Nazmi Idros ◽  
Yuming Wu ◽  
Thomas Burdyny ◽  
Sahil Garg ◽  
...  

2019 ◽  
Vol 9 (19) ◽  
pp. 5339-5349 ◽  
Author(s):  
Pinki Devi ◽  
Karan Malik ◽  
Ekta Arora ◽  
Saswata Bhattacharya ◽  
V. Kalendra ◽  
...  

For the clean and sustainable development, sequestration of carbon dioxide (CO2) through electrocatalytic reduction to produce high-value industrial precursors, such as CO, is a promising avenue.


2018 ◽  
Vol 924 ◽  
pp. 273-276 ◽  
Author(s):  
Masanobu Yoshikawa ◽  
Keiko Inoue ◽  
Junichiro Sameshima ◽  
Hirohumi Seki

We measured Fourier transform infrared (FT-IR) and cathodoluminescence (CL) spectra of SiO2 films with a various thickness, grown on 4H-SiC substrates. The peak frequency of the transverse optical (TO) phonon mode was blue-shifted by about 5 cm−1 as the oxide-layer thickness decreased from 50-60 nm to 10 nm. The blue shift of the TO mode is considerd to be caused by interfacial compressive stresses in the oxide-layer. On the other hand, the TO phonon mode was found to dramatically decrease as the oxide-layer thickness decreased from 10 nm to 1.7 nm. The CL measurement indicates that the intensity of the CL peaks at about 460 and 490 nm attributed to oxygen vacancy centers (OVCs) for No.2 become stronger than that for No.1. From a comparison between FT-IR and CL measurements, we concluded that the red-shift of the TO phonon with decreasing the oxide-layer thickness can mainly be attributed to an increase in inhomogeneity at the SiO2/SiC interface with decreasing oxide-layer thickness.


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