Inkjet printing of palladium source and drain electrodes on individual single-wall carbon nanotubes to fabricate field effect transistors

RSC Advances ◽  
2013 ◽  
Vol 3 (45) ◽  
pp. 23658 ◽  
Author(s):  
Kaikun Yang ◽  
Liwei Huang ◽  
Yayong Liu ◽  
Congkang Xu ◽  
Yanhu Bai ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Inkjet Printing ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Wall Carbon Nanotubes ◽  
Single Wall Carbon

High-Quality, Highly Concentrated Semiconducting Single-Wall Carbon Nanotubes for Use in Field Effect Transistors and Biosensors

ACS Nano ◽  
2013 ◽  
Vol 7 (8) ◽  
pp. 6831-6839 ◽  
Author(s):  
Wen-Shan Li ◽  
Peng-Xiang Hou ◽  
Chang Liu ◽  
Dong-Ming Sun ◽  
Jiangtan Yuan ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Wall Carbon Nanotubes ◽  
High Quality ◽  
Single Wall Carbon

Self-Assembly Fabrication of High Performance Carbon Nanotubes Based FETs

2003 ◽  
Vol 772 ◽  
Author(s):  
Emmanuel Valentin ◽  
Stephane Auvray ◽  
Arianna Filoramo ◽  
Aline Ribayrol ◽  
Marcelo Goffman ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Self Assembly ◽  
High Performance ◽  
Field Effect Transistors ◽  
High Yield ◽  
Single Wall Carbon Nanotubes ◽  
Single Wall Carbon ◽  
Assembled Monolayers ◽  
Self Assembled

AbstractWe describe the realization of high quality self-assembled single wall carbon nanotube field effect transistors (CNTFET). A method using self-assembled monolayers (SAMs) is used to obtain high yield selective deposition placement of single wall carbon nanotubes (SWNTs) on predefined regions of a substrate. This is achieved with individual or small bundles of SWNTs and with high densities suitable for fabrication of integrated devices. We show that such positioned SWNTs can be electrically contacted to realize high performance transistors, which very well compare with state-of-the-art CNTFETs. We therefore validate the self-assembly approach to reliably fabricate efficient carbon nanotube based devices.

FET Properties of Surface Silylated Single Wall Carbon Nanotubes

2006 ◽  
Vol 963 ◽  
Author(s):  
Ryotaro Kumashiro ◽  
Nobuya Hiroshiba ◽  
Hirotaka Ohashi ◽  
Takeshi Akasaka ◽  
Yutaka Maeda ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Field Effect Transistors ◽  
Electronic States ◽  
Single Wall Carbon Nanotubes ◽  
Chemical Modifications ◽  
Single Wall Carbon ◽  
Chemically Modified ◽  
Carrier Doping ◽  
P Type ◽  
Spread Sheet

ABSTRACTSingle wall carbon nanotubes (SWNTs) having semiconducting properties are promising as electronic materials for nano-scale devices in the future, and the electrical properties of SWNTs are of significantly fundamental and practical interests. It is well known that the field effect transistors (FETs) fabricated using semiconducting SWNTs show high performance in terms of the mobility. However, carriers in pristine SWNTs are mostly holes and, therefore, SWNTs -FETs usually show p-type properties. As for SWNTs, chemical carrier doping has been reported so far for controlling carrier concentration like graphite intercalations. Two major techniques in SWNTs are generally possible; one is endohedral doping and the other is the exohedral chemical modifications. It has been exemplified that doping with alkali metals can introduce electron carriers into SWNTs. Furthermore, the electrical transport properties of SWNTs were reported to be controlled by the endohedral insertion of organic molecules inside the SWNTs. A similar carrier doping could exohedrally be possible when the SWNTs surface is chemically modified. With such chemical modifications, the charge transfer from the substituent groups to SWNTs will be expected and this could modify the electronic states of SWNTs. We reported the FET properties of individual SWNTs exohedrally modified by Si-containing organic moieties, and demonstrated that p-type nanotubes can be converted to n-type ones. However, because of ununiformity of the surface-chemical modifications of SWNTs, the true effects of the exohedral modifications on FET properties were extremely difficult to be evaluated. In this meeting, we will present comparison of the FET properties of the exohedrally silylated SWNTs between separated individual and spread-sheet samples. For evaluating the FET properties, the chemically modified SWNTs have been dispersed on a FET substrate, and the measurements have been carried out at ambient temperature using a conventional method for a separated SWNTs and a spread-sheet SWNTs film. As a reference, the experiments were also made in the same manner on chemically non-modified CNTs. From the experimental results, it will be demonstrated that an n-type property can be enhanced by the exohedral modifications both in the case of the spread-sheet samples and in the case of the individual ones. We will discuss the effects of surface silylation on the electronic states of these SWNTs.

CHARGE STORAGE IN CARBON NANOTUBE FIELD-EFFECT TRANSISTORS

2006 ◽  
Vol 05 (04n05) ◽  
pp. 553-557
Author(s):  
HONG LI ◽  
QING ZHANG ◽  
JINGQI LI
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hysteresis Loops ◽  
Charge Trapping ◽  
Single Wall Carbon Nanotubes ◽  
Single Wall Carbon ◽  
Lower Temperature ◽  
Hysteresis Characteristics ◽  
Foreign Species

Very significant hysteresis characteristics are found in single wall carbon nanotubes field-effect transistors (CNTFET) fabricated using AC dielectrophoresis method. The CNTFETs show ambipolar characteristics. Two clear hysteresis loops are observed when the gate voltage is forward and backward swept. The hysteresis characteristics are studied from room temperature down to 16 K. It is found that the hysteresis loops become smaller as temperature is decreased. We suggested that the hysteresis is caused by charge trapping in foreign species covering the single wall carbon nanotube. It is more difficult for charges to transfer into and out of the trapping center at a lower temperature; as a result, the hysteresis loops become much smaller at low temperature.

Ambipolar field-effect transistor on as-grown single-wall carbon nanotubes

2003 ◽  
Vol 14 (2) ◽  
pp. 327-331 ◽  
Author(s):  
Bakir Babi  ◽  
Mahdi Iqbal ◽  
Christian Sch nenberger
Keyword(s):  
Carbon Nanotubes ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Wall Carbon Nanotubes ◽  
Single Wall Carbon ◽  
Effect Transistor
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