Characterization of a n-type Field Effect Transistor made from direct growth and patterning of single wall carbon nanotubes film

2010 ◽  
Author(s):  
Chen-Da Tsai ◽  
Chih Sheng Yang ◽  
S H Shiau ◽  
C W Liu ◽  
C Gau
Keyword(s):  
Carbon Nanotubes ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Wall Carbon Nanotubes ◽  
Single Wall Carbon ◽  
Direct Growth ◽  
Effect Transistor

Ambipolar field-effect transistor on as-grown single-wall carbon nanotubes

2003 ◽  
Vol 14 (2) ◽  
pp. 327-331 ◽  
Author(s):  
Bakir Babi  ◽  
Mahdi Iqbal ◽  
Christian Sch nenberger
Keyword(s):  
Carbon Nanotubes ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Wall Carbon Nanotubes ◽  
Single Wall Carbon ◽  
Effect Transistor

A Method Study on Assembly of Single-Wall Carbon Nanotube Field Effect Transistor Using Dielectrophoresis

2010 ◽  
Vol 139-141 ◽  
pp. 1550-1553 ◽  
Author(s):  
Ke Xu ◽  
Cheng Dong Wu ◽  
Xiao Jun Tian ◽  
Ying Zhang ◽  
Zai Li Dong
Keyword(s):  
Carbon Nanotube ◽  
Electric Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Building Blocks ◽  
Single Wall Carbon Nanotubes ◽  
Single Wall Carbon ◽  
Nanoscale Electronics ◽  
Experimental Parameters ◽  
Effect Transistor

Single-wall carbon nanotubes are candidates for a number of building blocks in nanoscale electronics. With respect to the assembly of carbon nanotube field effect transistor, the dielectrophoresis technology is adopted, which assembles SWCNTs between the micro-electrodes, SWCNTs are affected by the electrophoretic force which is carried out by the related theoretical analysis in a nonuniform electric field. The driving electric field of dielectrophoresis is simulated by the comsol software. According to the simulation results, a number of the experiments are done. It turns out that the required experimental parameters of the efficient assembly of SWCNT were obtained. AFM scanning and electrical properties of SWCNTs show that the method can achieve the effective assembly of carbon nanotube field effect transistor. SWCNTs are driven in the microelectrode gap, having a good arrangement of uniform orientation and assembly results, and proportional to the arrangement density along the electrode width direction and the duration of DEP. Meanwhile, it also provides an effective method of assembly and manufacture for other one-dimensional nanomaterials assembly of nanoelectronic devices.

Formation Of Single-Wall Carbon Nanotubes Forrest Assemblies On Metal Surfaces

2002 ◽  
Vol 734 ◽  
Author(s):  
Debjit Chattopadhyay ◽  
Izabela Galeska ◽  
Fotios Papadimitrakopoulos
Keyword(s):  
Carbon Nanotubes ◽  
Surface Coverage ◽  
Iron Hydroxide ◽  
Growth Characteristics ◽  
Self Organization ◽  
Single Wall Carbon Nanotubes ◽  
Unique Challenge ◽  
Single Wall Carbon ◽  
Topological Characteristics

ABSTRACTLearning how to purify and manipulate single wall carbon nanotubes (SWNTs) presents a unique challenge in material science. The processing-related difficulties of these long nano-fibers stem from their high aspect ratio, rigidity and the profound hydrophobic attractions along their tubular walls. Shortening them into discrete segments, with lengths from tens to hundreds of nanometers, presents a viable methodology to alleviate the shape-induced intractability. In addition, the metal-assisted self-organization of these nanosized objects into nano-forest geometries with dense perpendicular surface grafting, demonstrates that such nanosized objects hold significant promise for the development of nanoscale devices. This paper will present an extensive characterization of the topological characteristics of these assemblies, along with their surface coverage, growth characteristics and height fluctuation on iron hydroxide substrates.

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