scholarly journals Determining the drift time of charge carriers in p-type point-contact HPGe detectors

2012 ◽  
Vol 678 ◽  
pp. 98-104 ◽  
Author(s):  
R.D. Martin ◽  
M. Amman ◽  
Y.D. Chan ◽  
J.A. Detwiler ◽  
J.C. Loach ◽  
...  
Keyword(s):  
Drift Time ◽  
Point Contact ◽  
Charge Carriers ◽  
Hpge Detectors ◽  
P Type

Electrochemical preparation of vertically aligned, hollow CdSe nanotubes and their p–n junction hybrids with electrodeposited Cu2O

Nanoscale ◽  
2014 ◽  
Vol 6 (15) ◽  
pp. 9148-9156 ◽  
Author(s):  
Joyashish Debgupta ◽  
Ramireddy Devarapalli ◽  
Shakeelur Rahman ◽  
Manjusha V. Shelke ◽  
Vijayamohanan K. Pillai
Keyword(s):  
Charge Carriers ◽  
Type Ii ◽  
Electrochemical Preparation ◽  
Enhanced Absorption ◽  
Absorption Of Light ◽  
Vertically Aligned ◽  
P Type

Heterojunction (type II) of self standing, vertically aligned CdSe NTs (n-type) with electrodeposited Cu2O (p-type) exhibits excellent photoresponse, resulting from enhanced absorption of light and faster transport of photogenerated charge carriers by CdSe NTs.

Manganese-Doped CdGeAs2, ZnGeAs2 and ZnSiAs2 Chalcopyrites: A New Advanced Materials for Spintronics

2010 ◽  
Vol 168-169 ◽  
pp. 31-34 ◽  
Author(s):  
A.S. Morozov ◽  
L.A. Koroleva ◽  
D.M. Zashchirinskii ◽  
T.M. Khapaeva ◽  
S.F. Marenkin ◽  
...  
Keyword(s):  
Room Temperature ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Charge Carriers ◽  
Advanced Materials ◽  
Temperature Dependences ◽  
P Type ◽  
Mn Doped ◽  
Curie Temperatures ◽  
Exchange And Superexchange Interactions

Based on the Mn-doped chalcopyrites CdGeAs2, ZnGeAs2 and ZnSiAs2, new dilute magnetic semiconductors with the p-type conductivity were produced. Magnetization, electrical resistivity and Hall effect of these compositions were studied. Their temperature dependences of magnetization are similar in form in spite of a complicated character, which is controlled by the concentration and mobility of the charge carriers. Thus, for T < 15 K, these curves are characteristic of superparamagnets and for T > 15 K, of a frustrated ferromagnet. In compounds with Zn these two states are diluted by a spinglass-like state. This specific feature is ascribed to attraction of Mn ions occupying neighboring sites and to competition between the carrier-mediated exchange and superexchange interactions. The Curie temperatures of these compounds are above room temperature. These are the highest Curie temperatures in the AIIBIVCV2:Mn systems.

Enhancing electronic and optical properties of monolayer MoSe2via a MoSe2/blue phosphorene heterobilayer

2019 ◽  
Vol 21 (28) ◽  
pp. 15760-15766 ◽  
Author(s):  
Huabing Shu ◽  
Ying Wang ◽  
Minglei Sun
Keyword(s):  
Optical Properties ◽  
Charge Carriers ◽  
Type Ii ◽  
Electronic And Optical Properties ◽  
Effective Separation ◽  
P Type ◽  
Blue Phosphorene

Type-II heterostructures are appealing for application in optoelectronics due to their effective separation of photogenerated charge carriers.

ANOMALOUS TEMPERATURE EFFECT ON POINT-CONTACT Ag–LaBa2Cu3O7-x CONDUCTANCE SPECTRA

2000 ◽  
Vol 14 (22n23) ◽  
pp. 819-825 ◽  
Author(s):  
E. HATTA ◽  
V. M. SVISTUNOV ◽  
Yu. F. REVENKO ◽  
M. A. BELOGOLOVSKII ◽  
N. A. DOROSHENKO ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Point Contact ◽  
Proximity Effects ◽  
Charge Carriers ◽  
Differential Conductance ◽  
Anomalous Temperature ◽  
Bulk Ceramic ◽  
Scattering Rate ◽  
Wide Range ◽  
Superconducting Parameters

The observation of an anomalous temperature behavior of the differential conductance versus voltage curves in contacts formed by an Ag tip and a bulk ceramic LaBa2Cu3O7-x with Tc around 92 K is reported. For a wide range of temperatures from Tc to helium-liquid ones, we have found a crossover from curves typical for a pure conducting normal metal–superconductor interface up to Giaever tunneling characteristics with gap features shifted to high biases. We take into account the existence of a degraded interlayer with suppressed superconducting parameters between a normal injector and a superconducting bulk and interpret qualitatively the data in terms of mesoscopic proximity effects. We argue that as the temperature is decreased, (i) the electron localization in a disordered region is enhanced, and (ii) in the interlayer, inelastic scattering processes become more effective. The latter was considered as a result of the inelastic scattering rate changes for charge carriers interacting with magnetic excitations in the near-interface region of high-Tc compound junctions.

Modulation waves of charge carriers in n- and p-type semiconductor layers

2011 ◽  
Vol 45 (2) ◽  
pp. 192-197 ◽  
Author(s):  
T. T. Mnatsakanov ◽  
M. E. Levinshtein ◽  
A. G. Tandoev ◽  
S. N. Yurkov
Keyword(s):  
Charge Carriers ◽  
Type Semiconductor ◽  
P Type
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