Phonon surface scattering controlled length dependence of thermal conductivity of silicon nanowires

2013 ◽  
Vol 15 (35) ◽  
pp. 14647 ◽  
Author(s):  
Guofeng Xie ◽  
Yuan Guo ◽  
Baohua Li ◽  
Liwen Yang ◽  
Kaiwang Zhang ◽  
...  
2016 ◽  
Vol 27 (10) ◽  
pp. 105007 ◽  
Author(s):  
JinYong Choi ◽  
Kyoungah Cho ◽  
Dae Sung Yoon ◽  
Sangsig Kim

2010 ◽  
Author(s):  
Xueming Yang ◽  
Albert C. To ◽  
Jane W. Z. Lu ◽  
Andrew Y. T. Leung ◽  
Vai Pan Iu ◽  
...  

2011 ◽  
Vol 406 (13) ◽  
pp. 2515-2520 ◽  
Author(s):  
Zan Wang ◽  
Zhonghua Ni ◽  
Ruijie Zhao ◽  
Minhua Chen ◽  
Kedong Bi ◽  
...  

Nano Letters ◽  
2014 ◽  
Vol 14 (7) ◽  
pp. 3785-3792 ◽  
Author(s):  
Kathryn F. Murphy ◽  
Brian Piccione ◽  
Mehdi B. Zanjani ◽  
Jennifer R. Lukes ◽  
Daniel S. Gianola

2012 ◽  
Vol 24 (29) ◽  
pp. 295402 ◽  
Author(s):  
Wenhui Wan ◽  
Bangguo Xiong ◽  
Wenxing Zhang ◽  
Ji Feng ◽  
Enge Wang

2012 ◽  
Vol 1408 ◽  
Author(s):  
Benjamin M. Curtin ◽  
John E. Bowers

ABSTRACTSilicon nanowires (NWs) are promising thermoelectric materials as they offer large reductions in thermal conductivity over bulk Si without a significant decrease in the Seebeck coefficient or electrical conductivity. In this work, interference lithography was used to pattern a square lattice photoresist template over 2 cm x 2 cm Si substrates. The resulting vertical Si NW arrays were 1 μm tall with a packing density of ~15%, and the diameter of the Si NWs were 80 - 90 nm. The Si NW arrays were then embedded in spin-on glass (SOG) to form a dense composite material with a measured thermal conductivity of 1.45 W/m-K at 300 K. Devices were fabricated for cross-plane Seebeck coefficient measurements and the Si NW/SOG composite was found to have a Seebeck coefficient of roughly -284 μV/K, which is similar to bulk Si with the same doping. We also report a combined power generation of 29.3 μW from both the Si NW array and Si substrate with a temperature difference of 56 K and 50 μm x 50 μm device area.


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