Stability and electronic properties of ultrathin films of silicon and germanium

2013 ◽  
Vol 15 (24) ◽  
pp. 9710 ◽  
Author(s):  
Dimitrios Kaltsas ◽  
Leonidas Tsetseris
Keyword(s):  
Electronic Properties ◽  
Ultrathin Films ◽  
Silicon And Germanium

scholarly journals Erratum to: “Electronic properties of ultrathin films based on pyrrolofullerene molecules on the surface of oxidized silicon”

2014 ◽  
Vol 56 (11) ◽  
pp. 2366-2366
Author(s):  
A. S. Komolov ◽  
E. F. Lazneva ◽  
N. B. Gerasimova ◽  
A. A. Gavrikov ◽  
A. E. Khlopov ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Ultrathin Films

Electronic structure engineering in chemically modified ultrathin ZnO nanofilms via a built-in heterointerface

RSC Advances ◽  
2014 ◽  
Vol 4 (36) ◽  
pp. 18718-18723 ◽  
Author(s):  
Hongyan Guo ◽  
Ning Lu ◽  
Jun Dai ◽  
Xiao Cheng Zeng ◽  
Xiaojun Wu ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electronic Properties ◽  
Ultrathin Films ◽  
First Principles ◽  
First Principles Calculations ◽  
Chemically Modified ◽  
Structure Engineering

The electronic properties of chemically modified ZnO ultrathin films with a built-in heterointerface are investigated on the basis of first-principles calculations.

Structural and electronic properties of ultrathin films of Gd, Tb, Dy, Ho, and Er

1992 ◽  
Vol 45 (7) ◽  
pp. 3853-3856 ◽  
Author(s):  
H. Li ◽  
D. Tian ◽  
J. Quinn ◽  
Y. S. Li ◽  
S. C. Wu ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Ultrathin Films ◽  
Structural And Electronic Properties

scholarly journals RHF and DFT Study of the Molecular and Electronic Properties of (SiO2)n and (GeO2)n Nanoclusters

2018 ◽  
Vol 12 (9) ◽  
pp. 108 ◽  
Author(s):  
Chifu E. Ndikilar ◽  
L. S. Taura ◽  
G. W. Ejuh ◽  
A. Muhammad
Keyword(s):  
Electronic Properties ◽  
Density Functional ◽  
Research Work ◽  
Molecular Size ◽  
Germanium Dioxide ◽  
Molecular Structures ◽  
Plane Symmetric ◽  
Hartree Fock ◽  
Advantages And Disadvantages ◽  
Silicon And Germanium

The study of nanoclusters has attracted a lot of scientific research over the years. This class of materials are important because they bridge the gap between bulk materials and molecular structures. Silicon and Germanium oxides have many applications in semiconductor technology and nanotechnology. In this research work, molecular and electronic properties of Silicon and Germanium dioxide nanoclusters are studied. The results obtained reveal the comparative advantages and disadvantages of using any of the two oxides for particular applications. Restricted Hartree Fock and Density Functional Theory computations of the molecular and electronic properties of (SiO2)n and (GeO2)n nanoclusters (n = 1,..,6) are studied. Silicon dioxide clusters are found to have higher thermal energies and lower average bond lengths and are thus more stable than Germanium dioxide clusters. At n = 1, both nanoclusters are non-polar, but gradually become more polar with increase in n. The average polarizability, molecular hyperpolarizability and total thermal energies of the nanoclusters increases with increase in molecular size. Computed values of the electron affinities for (SiO2)n clusters agree with experimental results. Some of the most intense Infra Red vibrational motions observed in both molecules are anti-symmetric stretching of Si=O/Ge-O and chain in plane, symmetric stretching of the Si=O/Ge-O bonds and chain in plane and symmetric twisting/breathing of the chain(s) in plane. The two nanoclusters are also Raman active at some frequencies.

Electronic properties of Fe, Co, and Mn ultrathin films at the interface with MgO(001)

2005 ◽  
Vol 72 (14) ◽  
Author(s):  
M. Sicot ◽  
S. Andrieu ◽  
F. Bertran ◽  
F. Fortuna
Keyword(s):  
Electronic Properties ◽  
Ultrathin Films
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