A new synthetic route to hollow Co3O4 octahedra for supercapacitor applications

CrystEngComm ◽  
2014 ◽  
Vol 16 (5) ◽  
pp. 826-833 ◽  
Author(s):  
Yuebin Cao ◽  
Fangli Yuan ◽  
Mingshui Yao ◽  
Jin Ho Bang ◽  
Jung-Ho Lee
Keyword(s):  
Storage Capacity ◽  
Solvothermal Method ◽  
Charge Storage ◽  
Synthetic Route ◽  
A Charge ◽  
Supercapacitor Applications

Hollow Co3O4 octahedra, synthesized through a new solvothermal method, exhibited a charge storage capacity of 192 F g−1 with good long-term cyclability.

Effect of sleep on memory for binding different types of visual information

2020 ◽  
Author(s):  
John J Shaw ◽  
Zhisen Urgolites ◽  
Padraic Monaghan
Keyword(s):  
Visual Information ◽  
Storage Capacity ◽  
Declarative Memory ◽  
Recognition Task ◽  
Forced Choice ◽  
Long Term Memory ◽  
Term Memory ◽  
Different Types ◽  
Types Of Information

Visual long-term memory has a large and detailed storage capacity for individual scenes, objects, and actions. However, memory for combinations of actions and scenes is poorer, suggesting difficulty in binding this information together. Sleep can enhance declarative memory of information, but whether sleep can also boost memory for binding information and whether the effect is general across different types of information is not yet known. Experiments 1 to 3 tested effects of sleep on binding actions and scenes, and Experiments 4 and 5 tested binding of objects and scenes. Participants viewed composites and were tested 12-hours later after a delay consisting of sleep (9pm-9am) or wake (9am-9pm), on an alternative forced choice recognition task. For action-scene composites, memory was relatively poor with no significant effect of sleep. For object-scene composites sleep did improve memory. Sleep can promote binding in memory, depending on the type of information to be combined.

scholarly journals Using redox electrolytes to extend the charge storage capacity in an aqueous hybrid ion battery

2021 ◽  
Vol 411 ◽  
pp. 128416
Author(s):  
S.T. Senthilkumar ◽  
Jeong-Sun Park ◽  
Rebeca Marcilla ◽  
Jesus Palma ◽  
Youngsik Kim
Keyword(s):  
Storage Capacity ◽  
Charge Storage

Sulfur and nitrogen-doped graphene quantum dots/PANI nanocomposites for supercapacitors

2021 ◽  
Author(s):  
Hemalatha Kuzhandaivel ◽  
Sornalatha Manickam ◽  
Suresh Kannan Balasingam ◽  
Manik Clinton Franklin ◽  
Hee-Je Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Graphene Quantum Dots ◽  
Charge Storage ◽  
Nitrogen Doped ◽  
Nitrogen Doped Graphene ◽  
Doped Graphene ◽  
Supercapacitor Applications ◽  
Storage Properties

Sulfur and nitrogen-doped graphene quantum dots/polyaniline nanocomposites were synthesized and their electrochemical charge storage properties were tested for supercapacitor applications.

scholarly journals An Approach toward the Development of a Functional Encoding Model of Short Term Memory during Reading

1978 ◽  
Vol 10 (2) ◽  
pp. 141-148
Author(s):  
Mary Anne Herndon
Keyword(s):  
Cluster Analysis ◽  
Storage Capacity ◽  
Short Term Memory ◽  
Long Term Memory ◽  
Short Term ◽  
Processing Efficiency ◽  
Term Memory ◽  
Information Unit ◽  
Subsequent Storage

In a model of the functioning of short term memory, the encoding of information for subsequent storage in long term memory is simulated. In the encoding process, semantically equivalent paragraphs are detected for recombination into a macro information unit. This recombination process can be used to relieve the limited storage capacity constraint of short term memory and subsequently increase processing efficiency. The results of the simulation give a favorable indication of the success for the use of cluster analysis as a tool to simulate the encoding function in the detection of semantically similar paragraphs.

Relaxation Behavior and Breakdown Mechanisms of Nanocrystals Embedded Zr-doped HfO2 High-k Thin Films for Nonvolatile Memories

2008 ◽  
Vol 1071 ◽  
Author(s):  
Chia-Han Yang ◽  
Yue Kuo ◽  
Chen-Han Lin ◽  
Rui Wan ◽  
Way Kuo
Keyword(s):  
Nonvolatile Memory ◽  
Storage Capacity ◽  
Breakdown Strength ◽  
Charge Storage ◽  
Leakage Currents ◽  
Low Leakage ◽  
Nonvolatile Memories ◽  
High K ◽  
Memory Characteristics ◽  
Large Charge

AbstractSemiconducting or metallic nanocrystals embedded high-k films have been investigated. They showed promising nonvolatile memory characteristics, such as low leakage currents, large charge storage capacities, and long retention times. Reliability of four different kinds of nanocrystals, i.e., nc- Ru, -ITO, -Si and -ZnO, embedded Zr-doped HfO2 high-k dielectrics have been studied. All of them have higher relaxation currents than the non-embedded high-k film has. The decay rate of the relaxation current is in the order of nc-ZnO > nc-ITO > nc-Si > nc-Ru. When the relaxation currents of the nanocrystals embedded samples were fitted to the Curie-von Schweidler law, the n values were between 0.54 and 0.77, which are much lower than that of the non embedded high-k sample. The nanocrystals retain charges in two different states, i.e., deeply and loosely trapped. The ratio of these two types of charges was estimated. The charge storage capacity and holding strength are strongly influenced by the type of material of the embedded nanocrystals. The nc-ZnO embedded film holds trapped charges longer than other embedded films do. The ramp-relax result indicates that the breakdown of the embedded film came from the breakdown of the bulk high-k film. The type of nanocrystal material influences the breakdown strength.

Long‐term charge storage in interface states of ZnS MOS capacitors

1975 ◽  
Vol 46 (7) ◽  
pp. 2992-2997 ◽  
Author(s):  
L. G. Walker ◽  
G. W. Pratt Jr.
Keyword(s):  
Interface States ◽  
Charge Storage ◽  
Mos Capacitors

A method for modeling and deciphering the persistent photoconductance and long-term charge storage of ZnO nanorod arrays

Nano Research ◽  
2016 ◽  
Vol 9 (10) ◽  
pp. 2972-3002 ◽  
Author(s):  
Qiang Zhu ◽  
Changsheng Xie ◽  
Huayao Li ◽  
Dawen Zeng
Keyword(s):  
Charge Storage ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays
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