A defect-free mordenite membrane synthesized by vapour-phase transport method

1995 ◽  
pp. 1967 ◽  
Author(s):  
Norikazu Nishiyama ◽  
Korekazu Ueyama ◽  
Masahiko Matsukata
Keyword(s):  
Vapour Phase ◽  
Vapour Phase Transport ◽  
Phase Transport ◽  
Transport Method ◽  
Mordenite Membrane

Notizen: The Crystal Structure of MnIn2Se4, a Ternary Layered Semiconductor

1991 ◽  
Vol 46 (8) ◽  
pp. 1122-1124 ◽  
Author(s):  
K.-J. Range ◽  
U. Klement ◽  
G. Döll ◽  
E. Bucher ◽  
J. R. Baumann
Keyword(s):  
Crystal Structure ◽  
Single Crystals ◽  
Layered Structure ◽  
Chemical Vapour ◽  
Vapour Phase ◽  
Tetrahedral Coordination ◽  
Layered Semiconductor ◽  
Vapour Phase Transport ◽  
Phase Transport ◽  
Transport Technique

Single crystals of MnIn2Se4 have been grown by the chemical vapour phase transport technique using AlCl3 as the transporting agent. The structure was refined to R = 0.064, Rw, = 0.059 for 609 reflections. MnIn2Se4 (R 3̄m, hexagonal axes a = 4.051(1), c = 39.464(2) Å, c/a = 9.74, Z = 3) crystallizes with a nearly close-packed layered structure (sequence of the Se layers ABCA|CABC|BCAB) with Moct (= 0.56 Mn + 0.44 In) in octahedral coordination (Moct,–Se = 6 × 2.721(1) A) and Mtet (= 0.78 In + 0.22 Mn) in tetrahedral coordination (Mtet-Se = 1 × 2.527(2) and 3 × 2.593(1) Å). The overall layer sequences is ΑβΒαCyA| Cα AγBβC| BγCβAα B.

scholarly journals Enhanced detection of nitrogen dioxide via combined heating and pulsed UV operation of indium oxide nano-octahedra

2016 ◽  
Vol 7 ◽  
pp. 1507-1518 ◽  
Author(s):  
Oriol Gonzalez ◽  
Sergio Roso ◽  
Xavier Vilanova ◽  
Eduard Llobet
Keyword(s):  
Nitrogen Dioxide ◽  
Indium Oxide ◽  
Gas Sensors ◽  
Uv Light ◽  
Vapour Phase ◽  
Uv Light Irradiation ◽  
Combined Operation ◽  
Pulsed Uv Light ◽  
Vapour Phase Transport ◽  
Phase Transport

We report on the use of combined heating and pulsed UV light activation of indium oxide gas sensors for enhancing their performance in the detection of nitrogen dioxide in air. Indium oxide nano-octahedra were synthesized at high temperature (900 °C) via vapour-phase transport and screen-printed onto alumina transducers that comprised interdigitated electrodes and a heating resistor. Compared to the standard, constant temperature operation of the sensor, mild heating (e.g., 100 °C) together with pulsed UV light irradiation employing a commercially available, 325 nm UV diode (square, 1 min period, 15 mA drive current signal), results in an up to 80-fold enhancement in sensitivity to nitrogen dioxide. Furthermore, this combined operation method allows for making savings in power consumption that range from 35% to over 80%. These results are achieved by exploiting the dynamics of sensor response under pulsed UV light, which convey important information for the quantitative analysis of nitrogen dioxide.

GaAs growth by vapour phase transport

1975 ◽  
Vol 29 (2) ◽  
pp. 176-186 ◽  
Author(s):  
J.B. Loyau ◽  
M. Oberlin ◽  
A. Oberlin ◽  
L. Hollan ◽  
R. Cadoret
Keyword(s):  
Vapour Phase ◽  
Vapour Phase Transport ◽  
Phase Transport
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