High efficiency n-Si(oxide)(Pt) photoelectrochemical cells using chemically controlled tunnel oxides

1983 ◽  
pp. 1407 ◽  
Author(s):  
Arthur T. Howe
Keyword(s):  
High Efficiency ◽  
Photoelectrochemical Cells ◽  
Tunnel Oxides

Tailored near-infrared-emitting colloidal heterostructured quantum dots with enhanced visible light absorption for high performance photoelectrochemical cells

2019 ◽  
Vol 7 (17) ◽  
pp. 10225-10230 ◽  
Author(s):  
Ali Imran Channa ◽  
Xin Tong ◽  
Jing-Yin Xu ◽  
Yongchen Liu ◽  
Changmeng Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Visible Light ◽  
Light Absorption ◽  
High Performance ◽  
Near Infrared ◽  
High Efficiency ◽  
Photoelectrochemical Cells ◽  
Visible Light Absorption ◽  
Cds Qds

Near-infrared-emitting CuGaS2/CdS QDs with enhanced visible light absorption were developed to achieve high efficiency photoelectrochemical cells.

Ternary Cd(Se,Te) alloy semiconductors: Synthesis, material characterization, and high‐efficiency photoelectrochemical cells

1985 ◽  
Vol 58 (12) ◽  
pp. 4703-4708 ◽  
Author(s):  
C. Levy‐Clement ◽  
R. Triboulet ◽  
J. Rioux ◽  
A. Etcheberry ◽  
S. Licht ◽  
...  
Keyword(s):  
Material Characterization ◽  
High Efficiency ◽  
Photoelectrochemical Cells ◽  
Alloy Semiconductors

High efficiency, Pt-free photoelectrochemical cells for solar hydrogen generation based on “giant” quantum dots

Nano Energy ◽  
2016 ◽  
Vol 27 ◽  
pp. 265-274 ◽  
Author(s):  
Rajesh Adhikari ◽  
Lei Jin ◽  
Fabiola Navarro-Pardo ◽  
Daniele Benetti ◽  
Bandar AlOtaibi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Efficiency ◽  
Hydrogen Generation ◽  
Photoelectrochemical Cells ◽  
Solar Hydrogen

Environmentally friendly Mn-alloyed core/shell quantum dots for high-efficiency photoelectrochemical cells

2020 ◽  
Vol 8 (21) ◽  
pp. 10736-10741
Author(s):  
Rui Wang ◽  
Xin Tong ◽  
Ali Imran Channa ◽  
Qiugui Zeng ◽  
Jiachen Sun ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Performance ◽  
High Efficiency ◽  
Environmentally Friendly ◽  
Photoelectrochemical Cell ◽  
Photoelectrochemical Cells ◽  
Core Shell

A high performance photoelectrochemical cell fabricated using eco-friendly Mn-alloyed CuInS2/ZnS core/shell quantum dots is demonstrated.

scholarly journals High-Efficiency Photon-Capturing Capability of Two-Dimensional SnS Nanosheets for Photoelectrochemical Cells

Catalysts ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 236
Author(s):  
Xiaoguang Huang ◽  
Heechul Woo ◽  
Daseul Lee ◽  
Peinian Wu ◽  
Myungkwan Song ◽  
...  
Keyword(s):  
Water Splitting ◽  
High Efficiency ◽  
Sodium Thiosulfate ◽  
Cost Effective ◽  
Photoelectrochemical Cells ◽  
Manufacturing Cost ◽  
Sulfur Source ◽  
X Ray Diffraction ◽  
Environment Friendly ◽  
High Phase

Cost-effective, abundant, and non-toxic SnS nanosheet semiconductors can be used as water-splitting cells. Herein, a photoanode based on high-purity and highly crystalline SnS nanosheets was fabricated. We used sodium thiosulfate (Na2S2O3·5H2O) and stannous chloride (SnCl2·2H2O) as the tin and sulfur source materials, in place of SnCl4 and H2S gas, respectively, which have been used in previous studies. This gas-free fabrication process represents a new, environment-friendly fabrication method that can reduce the manufacturing cost of SnS nanosheets. The fabricated samples were characterized via X-ray diffraction, ultraviolet-visible spectroscopy, XPS, scanning electron microscopy, and Raman analyses. The XPS result indicated no Sn0 or Sn4+ in the S3 nanosheet; the nanosheet was SnS. These results with XRD show that the SnS nanosheet has high phase purity and crystallinity. Its direct optical band gap is 1.31 eV, and its lattice parameters are similar to those of standard SnS. The SnS nanosheet-based photoanode exhibited a maximum saturation photocurrent of 6.86 mA cm−2 at 0.57 V versus Ag/AgCl, with high stability. The most effective photocurrent for the photocatalytic water-splitting cell is attained with an increase in the surface area and developed electrical conduction. This is attributed to thermal annealing, which eliminates nanoparticle imperfections. This study confirms that SnS nanosheets are excellent candidates for water-splitting applications.

scholarly journals Group III-nitride Materials for High Efficiency Photoelectrochemical Cells

2005 ◽  
Vol 884 ◽  
Author(s):  
J. W. Ager ◽  
W. Walukiewicz ◽  
K. M. Yu ◽  
W. Shan ◽  
J. Denlinger ◽  
...  
Keyword(s):  
Valence Band ◽  
High Efficiency ◽  
Valence Band Maximum ◽  
Point Of View ◽  
Ternary Alloys ◽  
Photoelectrochemical Cells ◽  
Flat Band ◽  
Flat Band Potential ◽  
Group Iii ◽  
Valence Band Anticrossing

AbstractTwo ternary alloys based on III-nitride semiconductor alloys are explored as potential components of photoelectrochemical cells (PECs) for the direct generation of hydrogen using solar energy. For In1-xGaxN, it will be shown using prior measurements of band offsets that spontaneous water splitting can occur for x up to 0.2 and potentially higher. Flat band potential and photocurrent measurements from an n-type epilayer with x = 0.37 will be presented. This initial data appears to indicate that the flat band potential lies just below the H+/H2 from pH 0 – 14. In the case of GaAsxN1-x we will demonstrate that the replacement of a few percent of As in N sublattice drives the bandgap down from the GaN value (3.4 eV) into a range that is attractive for PEC cells [1]. This band gap reduction is explained by the valence band anticrossing that pushes the valence band maximum up initially by 0.5 eV. From the point of view of a PEC cell, this reduces the gap (desirable for efficiency) without compromising the desired H+/H2 overpotential.

Microcalorimeters for X-Ray Spectroscopy

1988 ◽  
Vol 102 ◽  
pp. 41
Author(s):  
E. Silver ◽  
C. Hailey ◽  
S. Labov ◽  
N. Madden ◽  
D. Landis ◽  
...  
Keyword(s):  
High Resolution ◽  
High Efficiency ◽  
Thermal Response ◽  
Low Noise ◽  
High Resolution Spectroscopy ◽  
Superconducting Transition ◽  
Sapphire Substrates ◽  
Laboratory Plasmas ◽  
Adiabatic Demagnetization ◽  
Theoretical Predictions

The merits of microcalorimetry below 1°K for high resolution spectroscopy has become widely recognized on theoretical grounds. By combining the high efficiency, broadband spectral sensitivity of traditional photoelectric detectors with the high resolution capabilities characteristic of dispersive spectrometers, the microcalorimeter could potentially revolutionize spectroscopic measurements of astrophysical and laboratory plasmas. In actuality, however, the performance of prototype instruments has fallen short of theoretical predictions and practical detectors are still unavailable for use as laboratory and space-based instruments. These issues are currently being addressed by the new collaborative initiative between LLNL, LBL, U.C.I., U.C.B., and U.C.D.. Microcalorimeters of various types are being developed and tested at temperatures of 1.4, 0.3, and 0.1°K. These include monolithic devices made from NTD Germanium and composite configurations using sapphire substrates with temperature sensors fabricated from NTD Germanium, evaporative films of Germanium-Gold alloy, or material with superconducting transition edges. A new approache to low noise pulse counting electronics has been developed that allows the ultimate speed of the device to be determined solely by the detector thermal response and geometry. Our laboratory studies of the thermal and resistive properties of these and other candidate materials should enable us to characterize the pulse shape and subsequently predict the ultimate performance. We are building a compact adiabatic demagnetization refrigerator for conveniently reaching 0.1°K in the laboratory and for use in future satellite-borne missions. A description of this instrument together with results from our most recent experiments will be presented.

Imaging and diffraction modes in Scanning Transmission Electron Microscopy

1986 ◽  
Vol 44 ◽  
pp. 684-687
Author(s):  
J. M. Cowley ◽  
R. Glaisher ◽  
J. A. Lin ◽  
H.-J. Ou
Keyword(s):  
Scanning Transmission Electron Microscopy ◽  
High Efficiency ◽  
Fiber Optic ◽  
Image Intensifier ◽  
Detector System ◽  
Detector Plane ◽  
Secondary Electrons ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Special Detector

Some of the most important applications of STEM depend on the variety of imaging and diffraction made possible by the versatility of the detector system and the serial nature, of the image acquisition. A special detector system, previously described, has been added to our STEM instrument to allow us to take full advantage of this versatility. In this, the diffraction pattern in the detector plane may be formed on either of two phosphor screens, one with P47 (very fast) phosphor and the other with P20 (high efficiency) phosphor. The light from the phosphor is conveyed through a fiber-optic rod to an image intensifier and TV system and may be photographed, recorded on videotape, or stored digitally on a frame store. The P47 screen has a hole through it to allow electrons to enter a Gatan EELS spectrometer. Recently a modified SEM detector has been added so that high resolution (10Å) imaging with secondary electrons may be used in conjunction with other modes.

Influence of MBE Growth Conditions on Dislocation Densities of GaAs/Ge Epilayers Grown on Silicon Substrates

1985 ◽  
Vol 43 ◽  
pp. 364-365
Author(s):  
K.M. Hones ◽  
P. Sheldon ◽  
B.G. Yacobi ◽  
A. Mason
Keyword(s):  
High Efficiency ◽  
Lattice Mismatch ◽  
Low Cost ◽  
Growth Conditions ◽  
Nonradiative Recombination ◽  
Device Structure ◽  
Si Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Dislocation Type

There is increasing interest in growing epitaxial GaAs on Si substrates. Such a device structure would allow low-cost substrates to be used for high-efficiency cascade- junction solar cells. However, high-defect densities may result from the large lattice mismatch (∼4%) between the GaAs epilayer and the silicon substrate. These defects can act as nonradiative recombination centers that can degrade the optical and electrical properties of the epitaxially grown GaAs. For this reason, it is important to optimize epilayer growth conditions in order to minimize resulting dislocation densities. The purpose of this paper is to provide an indication of the quality of the epitaxially grown GaAs layers by using transmission electron microscopy (TEM) to examine dislocation type and density as a function of various growth conditions. In this study an intermediate Ge layer was used to avoid nucleation difficulties observed for GaAs growth directly on Si substrates. GaAs/Ge epilayers were grown by molecular beam epitaxy (MBE) on Si substrates in a manner similar to that described previously.

The use of high-resolution FESEM to study solid-state phase transformations and reactions

1994 ◽  
Vol 52 ◽  
pp. 1028-1029
Author(s):  
P. G. Kotula ◽  
D. D. Erickson ◽  
C. B. Carter
Keyword(s):  
Solid State ◽  
High Resolution ◽  
Phase Transformations ◽  
High Efficiency ◽  
Sol Gel ◽  
Quantitative Information ◽  
Solid State Reactions ◽  
Critical Dimensions ◽  
Backscattered Electrons ◽  
Backscattered Electron

High-resolution field-emission-gun scanning electron microscopy (FESEM) has recently emerged as an extremely powerful method for characterizing the micro- or nanostructure of materials. The development of high efficiency backscattered-electron detectors has increased the resolution attainable with backscattered-electrons to almost that attainable with secondary-electrons. This increased resolution allows backscattered-electron imaging to be utilized to study materials once possible only by TEM. In addition to providing quantitative information, such as critical dimensions, SEM is more statistically representative. That is, the amount of material that can be sampled with SEM for a given measurement is many orders of magnitude greater than that with TEM.In the present work, a Hitachi S-900 FESEM (operating at 5kV) equipped with a high-resolution backscattered electron detector, has been used to study the α-Fe2O3 enhanced or seeded solid-state phase transformations of sol-gel alumina and solid-state reactions in the NiO/α-Al2O3 system. In both cases, a thin-film cross-section approach has been developed to facilitate the investigation. Specifically, the FESEM allows transformed- or reaction-layer thicknesses along interfaces that are millimeters in length to be measured with a resolution of better than 10nm.

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