The structural, optical and electrical characterization of high-performance, low-temperature and solution-processed alkali metal-doped ZnO TFTs

2013 ◽  
Vol 1 (7) ◽  
pp. 1383 ◽  
Author(s):  
Si Yun Park ◽  
Kyongjun Kim ◽  
Keon-Hee Lim ◽  
Beom joon Kim ◽  
Eungkyu Lee ◽  
...  
Keyword(s):  
Low Temperature ◽  
Alkali Metal ◽  
High Performance ◽  
Electrical Characterization ◽  
Solution Processed ◽  
Doped Zno ◽  
Metal Doped

Low-Temperature, Solution-Processed and Alkali Metal Doped ZnO for High-Performance Thin-Film Transistors

2012 ◽  
Vol 24 (6) ◽  
pp. 834-838 ◽  
Author(s):  
Si Yun Park ◽  
Beom Joon Kim ◽  
Kyongjun Kim ◽  
Moon Sung Kang ◽  
Keon-Hee Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Alkali Metal ◽  
Thin Film Transistors ◽  
High Performance ◽  
Solution Processed ◽  
Temperature Solution ◽  
Doped Zno ◽  
Metal Doped

High Efficiency Low-Temperature Processed Perovskite Solar Cells Integrated with Alkali Metal Doped ZnO Electron Transport Layers

2018 ◽  
Vol 3 (6) ◽  
pp. 1241-1246 ◽  
Author(s):  
Randi Azmi ◽  
Sunbin Hwang ◽  
Wenping Yin ◽  
Tae-Wook Kim ◽  
Tae Kyu Ahn ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electron Transport ◽  
Low Temperature ◽  
Alkali Metal ◽  
High Efficiency ◽  
Perovskite Solar Cells ◽  
Doped Zno ◽  
Metal Doped

Low temperature aqueous solution-processed Li doped ZnO buffer layers for high performance inverted organic solar cells

2016 ◽  
Vol 4 (25) ◽  
pp. 6169-6175 ◽  
Author(s):  
Zhenhua Lin ◽  
Jingjing Chang ◽  
Chunfu Zhang ◽  
Jincheng Zhang ◽  
Jishan Wu ◽  
...  
Keyword(s):  
Aqueous Solution ◽  
Solar Cells ◽  
Low Temperature ◽  
Buffer Layer ◽  
Organic Solar Cells ◽  
High Performance ◽  
Photovoltaic Performance ◽  
Buffer Layers ◽  
Solution Processed ◽  
Doped Zno

An enhanced photovoltaic performance is achieved by employing a lithium doped ZnO layer as the electron buffer layer for organic solar cells.

Solution-Processed LiF-Doped ZnO Films for High Performance Low Temperature Field Effect Transistors and Inverted Solar Cells

2013 ◽  
Vol 5 (14) ◽  
pp. 6687-6693 ◽  
Author(s):  
Jingjing Chang ◽  
Zhenhua Lin ◽  
Chunxiang Zhu ◽  
Chunyan Chi ◽  
Jie Zhang ◽  
...  
Keyword(s):  
Temperature Field ◽  
Solar Cells ◽  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Zno Films ◽  
Solution Processed ◽  
Doped Zno

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Characterization of bulk crystals of transition metal doped ZnO for spintronic applications

2003 ◽  
Vol 799 ◽  
Author(s):  
M. H. Kane ◽  
R. Varatharajan ◽  
Z. C. Feng ◽  
S. Kandoor ◽  
J. Nause ◽  
...  
Keyword(s):  
Transition Metal ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Absorption Bands ◽  
Growth Technique ◽  
Undoped Material ◽  
Doped Zno ◽  
Metal Doped ◽  
The Individual

ABSTRACTIn this work, we report on the material properties of ZnO doped with Mn, Co, and Fe grown by a modified melt growth technique. X-ray diffraction measurements show that transition metals can be incorporated on Zn sites; an increase in the lattice parameter is apparent with increasing doping level. UV-visible transmission and reflectance measurements have also been performed. Absorption bands in the visible regime are distinctive to the individual transition metal dopants. A noticeable shift in the optical band edge has been observed from these Mn/Co/Fe-doped ZnO crystals in comparison with the undoped material. ZnO may also provide a suitable platform for the incorporation of transition metal elements through high temperature near equilibrium growth processes; however, further work is required in order to employ these materials for spintronic applications.

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