Temperature dependent phonon Raman scattering of Heusler alloy Co2MnxFe1−xAl/GaAs films grown by molecular-beam epitaxy

RSC Advances ◽  
2012 ◽  
Vol 2 (26) ◽  
pp. 9899 ◽  
Author(s):  
Zhenni Zhan ◽  
Zhigao Hu ◽  
Kangkang Meng ◽  
Jianhua Zhao ◽  
Junhao Chu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Raman Scattering ◽  
Heusler Alloy ◽  
Molecular Beam ◽  
Temperature Dependent ◽  
Gaas Films

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

scholarly journals Molecular-beam epitaxy of the half-Heusler alloy NiMnSb on (In,Ga)As/InP (001)

2003 ◽  
Vol 83 (3) ◽  
pp. 521-523 ◽  
Author(s):  
P. Bach ◽  
A. S. Bader ◽  
C. Rüster ◽  
C. Gould ◽  
C. R. Becker ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heusler Alloy ◽  
Molecular Beam

scholarly journals Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co2−xMn1+xSi Heusler alloy films grown by molecular beam epitaxy

2018 ◽  
Vol 112 (26) ◽  
pp. 262407 ◽  
Author(s):  
Mikihiko Oogane ◽  
Anthony P. McFadden ◽  
Kenji Fukuda ◽  
Masakiyo Tsunoda ◽  
Yasuo Ando ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heusler Alloy ◽  
Molecular Beam ◽  
Anisotropic Magnetoresistance ◽  
Half Metallic ◽  
Alloy Films ◽  
Magnetic Damping

Spin-flip Raman-scattering studies of compensating donor centers in nitrogen-doped zinc selenide grown by molecular-beam epitaxy

1996 ◽  
Vol 53 (16) ◽  
pp. 10983-10987 ◽  
Author(s):  
C. M. Townsley ◽  
J. J. Davies ◽  
D. Wolverson ◽  
P. J. Boyce ◽  
G. Horsburgh ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Raman Scattering ◽  
Zinc Selenide ◽  
Molecular Beam ◽  
Nitrogen Doped ◽  
Spin Flip

Implantation Energy Selection in Molecular Beam Epitaxy GaAs Films on Si Substrates

1991 ◽  
Vol 8 (3) ◽  
pp. 149-152
Author(s):  
Xiao Guangming ◽  
Yin Shiduan ◽  
Zhang Jingping ◽  
Ding Aiju ◽  
Dong Aihua ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Implantation Energy ◽  
Si Substrates ◽  
Gaas Films

Tin‐doping effects in GaAs films grown by molecular beam epitaxy

1978 ◽  
Vol 49 (9) ◽  
pp. 4854-4861 ◽  
Author(s):  
C. E. C. Wood ◽  
B. A. Joyce
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Doping Effects ◽  
Gaas Films
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