Aligned carbon nanotube, graphene and graphite oxide thin films via substrate-directed rapid interfacial deposition

Nanoscale ◽  
2012 ◽  
Vol 4 (10) ◽  
pp. 3075 ◽  
Author(s):  
Julio M. D'Arcy ◽  
Henry D. Tran ◽  
Adam Z. Stieg ◽  
James K. Gimzewski ◽  
Richard B. Kaner
Keyword(s):  
Thin Films ◽  
Carbon Nanotube ◽  
Graphite Oxide ◽  
Oxide Thin Films

Highly responsive hydrogen gas sensing by partially reduced graphite oxide thin films at room temperature

Carbon ◽  
2012 ◽  
Vol 50 (11) ◽  
pp. 4061-4067 ◽  
Author(s):  
Jianwei Wang ◽  
Youngreal Kwak ◽  
In-yeal Lee ◽  
Sunglyul Maeng ◽  
Gil-Ho Kim
Keyword(s):  
Thin Films ◽  
Graphite Oxide ◽  
Room Temperature ◽  
Gas Sensing ◽  
Hydrogen Gas ◽  
Oxide Thin Films ◽  
Reduced Graphite Oxide

Effect of thickness on nonlinear absorption properties of graphite oxide thin films

2016 ◽  
Vol 60 ◽  
pp. 450-455 ◽  
Author(s):  
V.G. Sreeja ◽  
Ajina Cheruvalathu ◽  
R. Reshmi ◽  
E.I. Anila ◽  
Sheenu Thomas ◽  
...  
Keyword(s):  
Thin Films ◽  
Graphite Oxide ◽  
Nonlinear Absorption ◽  
Oxide Thin Films ◽  
Absorption Properties

scholarly journals Multi-Walled Carbon Nanotube-Doped Tungsten Oxide Thin Films for Hydrogen Gas Sensing

Sensors ◽  
2010 ◽  
Vol 10 (8) ◽  
pp. 7705-7715 ◽  
Author(s):  
Chatchawal Wongchoosuk ◽  
Anurat Wisitsoraat ◽  
Ditsayut Phokharatkul ◽  
Adisorn Tuantranont ◽  
Teerakiat Kerdcharoen
Keyword(s):  
Thin Films ◽  
Carbon Nanotube ◽  
Tungsten Oxide ◽  
Gas Sensing ◽  
Hydrogen Gas ◽  
Oxide Thin Films ◽  
Multi Walled Carbon Nanotube ◽  
Tungsten Oxide Thin Films

Effects of dopant concentration on the microstructure of tin- doped indium oxide thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 716-717
Author(s):  
I. A. Rauf
Keyword(s):  
Thin Films ◽  
Indium Oxide ◽  
Ionic Radius ◽  
Free Carrier ◽  
Electron Gun ◽  
Periodic Lattice ◽  
Oxide Thin Films ◽  
Transmission Electron ◽  
The Difference ◽  
Dopant Atoms

To understand the electronic conduction mechanism in Sn-doped indium oxide thin films, it is important to study the effect of dopant atoms on the neighbouring indium oxide lattice. Ideally Sn is a substitutional dopant at random indium sites. The difference in valence (Sn4+ replaces In3+) requires that an extra electron is donated to the lattice and thus contributes to the free carrier density. But since Sn is an adjacent member of the same row in the periodic table, the difference in the ionic radius (In3+: 0.218 nm; Sn4+: 0.205 nm) will introduce a strain in the indium oxide lattice. Free carrier electron waves will no longer see a perfect periodic lattice and will be scattered, resulting in the reduction of free carrier mobility, which will lower the electrical conductivity (an undesirable effect in most applications).One of the main objectives of the present investigation is to understand the effects of the strain (produced by difference in the ionic radius) on the microstructure of the indium oxide lattice when the doping level is increased to give high carrier densities. Sn-doped indium oxide thin films were prepared with four different concentrations: 9, 10, 11 and 12 mol. % of SnO2 in the starting material. All the samples were prepared at an oxygen partial pressure of 0.067 Pa and a substrate temperature of 250°C using an Edwards 306 coating unit with an electron gun attachment for heating the crucible. These deposition conditions have been found to give optimum electrical properties in Sn-doped indium oxide films. A JEOL 2000EX transmission electron microscope was used to investigate the specimen microstructure.

Preparation and Hemocompatibility of Neodymium Incorporated Zinc Oxide Thin Films

2011 ◽  
Vol 26 (9) ◽  
pp. 993-997
Author(s):  
Zhan-Yun HUANG ◽  
Ping LUO ◽  
Di-Hu CHEN
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Oxide Thin Films
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